IRF3710STRLPBF - 100V 57A N-Channel MOSFET | Infineon | D2PAK
MPN: IRF3710STRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.94 | $19.40 |
| 100 | $1.62 | $162.00 |
| 500 | $1.41 | $705.00 |
| 1,000 | $1.23 | $1,230.00 |
Drop-in alternatives for IRF3710STRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF3710SPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF4905STRLPBF
✅ Drop-In✓ In Stock
$0.95 / Unit
View Datasheet →IRFZ48NSTRLPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRF3710STRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET / IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 57 A |
| On-Resistance RDS(on) max | 23 mOhm |
| Total Gate Charge (Qg) | 86.7 nC |
| Power Dissipation (PD, Tc=25 C) | 200 W |
| Operating Temperature Range | -55 C to +175 C |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free) |
| Lead-Free | Yes |
| Tape & Reel Orientation | TRL (left) |
IRF3710STRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain — Drain terminal (also tied to the metal tab on the back of the package) |
| Pin 3 | Source — Source terminal; connect to circuit ground (low-side) or load return |
| Pin TAB | Drain (tab) — Metal tab electrically tied to pin 2; serves as primary thermal path and must be soldered to copper pour |
Safe Operating Area (DC, TC=25 C)
Typical Applications
IRF3710STRLPBF is suitable for 6 applications: Industrial DC-DC Converters, Brushless DC Motor Drives, Automotive 12 V/24 V Load Switching, Solar Inverter Power Stages, Battery Protection and Hot-Swap, Uninterruptible Power Supplies (UPS).
Industrial DC-DC Converters
The IRF3710STRLPBF serves as the low-side or synchronous switch in 48 V to 12 V buck converters used in telecom rectifiers and industrial power supplies. With 100 V VDS it tolerates transients on a 36-72 V telecom bus, and its 23 mOhm RDS(on) limits conduction loss to roughly 7 W at 30 A load (estimated from P = I^2 x RDS(on)). The 86.7 nC total gate charge keeps driver losses modest at 100 kHz switching, and the D2PAK footprint allows direct PCB heatsinking via copper pour.
Recommended
Brushless DC Motor Drives
In three-phase BLDC motor drives for e-bikes, drones, and industrial fans, the IRF3710STRLPBF is used as a low-side switch with 57 A continuous capability and full avalanche rating. The 100 V rating comfortably handles back-EMF from 24 V and 36 V battery packs, while the HEXFET cell structure provides the avalanche energy absorption needed for unclamped inductive switching at motor turn-off. PCB-side thermal design typically uses 1 square inch of 2 oz copper per device.
Recommended
Automotive 12 V/24 V Load Switching
Although not AEC-Q101 qualified, the IRF3710STRLPBF is widely used in non-safety automotive applications such as headlamp drivers, seat heaters, and accessory relays operating from a 12 V or 24 V bus. The 100 V VDS rating provides large transient margin for load-dump events up to ISO 7637-2 pulse severity, and the 57 A ID rating exceeds the inrush current of most electromechanical loads. Designers should still add a TVS clamp and fuse for production robustness.
Recommended
Solar Inverter Power Stages
In small-scale photovoltaic micro-inverters and charge controllers, the IRF3710STRLPBF switches DC battery and PV-array currents up to 57 A at 100 V. Its low RDS(on) of 23 mOhm directly improves inverter efficiency by reducing conduction loss during the synchronous rectification phase, which is critical for maximizing energy harvest in residential PV systems. A small aluminium heatsink or extensive copper pour is typically required for continuous 30 A operation.
Recommended
Battery Protection and Hot-Swap
The IRF3710STRLPBF functions as the main disconnect switch in 24-48 V battery management systems, where its 100 V VDS protects against pack overvoltage transients and the 57 A ID handles peak discharge currents of lithium-ion packs. The HEXFET avalanche rating absorbs the energy of an abrupt load disconnect, preventing device failure in the absence of a dedicated TVS clamp. Typical hot-swap circuits add a gate-source resistor for controlled turn-on and a current-sense resistor for inrush limiting.
Recommended
Uninterruptible Power Supplies (UPS)
Within the inverter stage of line-interactive and online UPS systems, the IRF3710STRLPBF switches 300-400 VDC bus-derived currents down to 24 V or 48 V battery rails at powers up to 1 kW. Its HEXFET technology provides the ruggedness required for continuous switching under fault conditions, and the D2PAK package simplifies thermal management in densely populated UPS enclosures. Paralleled devices can scale current beyond 100 A when additional MOSFETs share the same heatsink.
Recommended
Recommended Products Summary
Engineering reference data for IRF3710STRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF3710SPBF | IRF4905STRLPBF | IRFZ48NSTRLPBF | IRFR2405TRLPBF | IRFR5305TRLPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different | DPAK (TO-252) - different |
| VDS max | 100 V | 100 V | 55 V | 55 V | 55 V | 55 V |
| Continuous ID (TC=25 C) | 57 A | 57 A | 74 A | 64 A | 56 A | 31 A |
| RDS(on) max | 23 mOhm | 23 mOhm | 20 mOhm | 14 mOhm | 16 mOhm | 60 mOhm |
| Polarity | N-channel | N-channel | P-channel | N-channel | N-channel | P-channel |
| Gate Charge Qg | 86.7 nC | 86.7 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25 C) | 200 W | 200 W | 200 W | 190 W | 110 W | 110 W |
Key Differentiators
- True D2PAK surface-mount package with 100 V rating and 57 A ID (vs IRFR2405TRLPBF)
- Lower RDS(on) at 100 V VDS rating than competing 100 V D2PAK parts (vs IRF4905STRLPBF)
- Higher VDS headroom compared to lower-voltage D2PAK alternatives (vs IRFZ48NSTRLPBF)
Design Notes
Estimated: at ID = 30 A continuous, conduction loss alone is approximately 21 W (P = I^2 x RDS(on) = 30^2 x 0.023). With D2PAK theta_JA around 40 C/W on 1 sq inch of 2 oz copper, junction temperature will rise ~840 C above ambient - clearly impossible, indicating the part must operate below roughly 20 A continuous without an external heatsink, or be attached to a heatsink with theta_SA below 1 C/W to support the full 57 A rating at TC=25 C.
Keep the gate drive loop area below 1 sq cm by routing the gate trace directly over the source pad; this minimises parasitic inductance that causes gate ringing and possible MOSFET self-turn-on via miller coupling. Place a 10-100 Ohm gate resistor in series with the gate to dampen oscillations, and add a 10 kOhm pull-down from gate to source so the device stays off during controller start-up.
Do not exceed the absolute maximum VGS of +/- 20 V (verify against datasheet final figure). Driving the gate from a 12 V logic supply without a regulator can over-stress the gate oxide of legacy HEXFET parts. Add a zener clamp (e.g. 16 V) gate-to-source if the gate driver supply can overshoot, particularly in half-bridge configurations where the source pin swings with the phase node.
Solder the D2PAK metal tab to a copper pad of at least 1 square inch (approximately 645 sq mm) using 2 oz copper or thicker. Use multiple thermal vias under the pad to spread heat into internal copper planes; 9-12 vias of 0.3 mm drill diameter is typical. Without proper tab soldering, the device will overheat at currents well below its 57 A rating.
Compliance Information
RoHS compliant per Infineon product page (Pb-free PBF suffix). Not AEC-Q100/Q101 qualified - for automotive safety applications use AEC-Q101 qualified parts such as Infineon's automotive-grade OptiMOS family.
