FDMC8882 - 30V, 16A N-Ch PowerTrench MOSFET | onsemi
MPN: FDMC8882 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.02 | $1.02 |
| 10 | $0.97 | $9.70 |
| 100 | $0.9 | $90.00 |
| 500 | $0.84 | $420.00 |
| 1,000 | $0.78 | $780.00 |
FDMC8882 Overview
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of virtually every electronic system, sitting within the hierarchy of discrete power semiconductors alongside diodes and IGBTs. In portable designs, the MOSFET is typically the last switching or load-isolation element between a battery pack and the load, so its RDS(on), gate charge and package thermal resistance directly determine efficiency and battery runtime.
Key features of the FDMC8882 include its advanced PowerTrench process, which is especially tailored to minimize on-state resistance; a 14.3 mOhm maximum RDS(on) that reduces conduction losses at high load currents; a 30 V drain-source rating suited to single- and multi-cell lithium-ion battery stacks; and a 16 A continuous drain current capability. The large exposed drain pad of the MLP package provides a low thermal path to the PCB, allowing heat generated during switching and conduction to spread into copper planes without a heatsink.
Technically, the PowerTrench trench-gate structure optimizes the trade-off between specific on-resistance and gate charge, giving superior figure-of-merit performance compared with older planar devices in the same voltage class. This makes the part effective both as a low-frequency load switch, where conduction loss dominates, and as a switching element in moderate-frequency DC-DC conversion stages where gate-charge-related losses matter.
Typical applications include load switching and battery isolation in notebook computers, power-path and protection switches in portable battery packs, and power management rails in consumer and industrial equipment. The 30 V rating provides comfortable headroom for 11.1 V and 14.8 V Li-ion packs plus transients.
Design consideration: PCB layout dominates real-world performance - maximize copper area under the exposed drain and source pads, since the package thermal resistance and current rating assume an adequately cooled board. Estimated junction temperature rise must always be checked against the 150 C maximum at the actual load profile.
This page synthesizes distributor pricing, cross-reference data, and drop-in alternative analysis not found in the manufacturer datasheet alone.
Drop-in alternatives for FDMC8882 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
FDMC8884
β Drop-Inπ Reference alternative (not in catalog)
FDMC8882 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 16 A |
| On-Resistance Max (RDS(on)) | 14.3 mOhm |
| Process Technology | PowerTrench (trench gate) |
| Operating Temperature Range | -55 C to +150 C |
| Package | MLP 8x8 mm (PQFN, surface mount) |
| Mounting Type | Surface Mount |
| Typical Applications | Power management, load switching (notebook computers, portable battery packs) |
FDMC8882 mlp 8x8 mm (pqfn, surface mount) Pin Configuration Guide
Pin configuration for FDMC8882 (mlp 8x8 mm (pqfn, surface mount) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for FDMC8882.
Refer to the datasheet for full pin configuration.
Safe Operating Area
Typical Applications
FDMC8882 is suitable for 6 applications: Notebook Computer Power Management, Portable Battery Pack Load Switching, DC-DC Converter Power Stage, Hot-Swap and Inrush Control, Motor Drive Low-Voltage Stages, LED Driver Power Switching.
Notebook Computer Power Management
The FDMC8882 fits notebook computer power rails because its 30 V rating covers common multi-cell Li-ion bus voltages with transient headroom, while the 14.3 mOhm RDS(on) keeps conduction loss low: at a 5 A rail, estimated conduction dissipation is only about 0.36 W. In a typical power-path design it is placed between the system rail and a load switch stage, driven by a gate-driver or hot-swap controller at 10 V gate drive to fully enhance the channel. The 8 x 8 mm MLP package exposed pad spreads heat into the motherboard copper, avoiding a heatsink at moderate loads. Trade-off: gate charge is higher than small SOT-23 parts, so high-frequency switching stages should verify driver capability.
Recommended
Portable Battery Pack Load Switching
For portable battery packs, the FDMC8882 serves as the main load-isolation or battery-path MOSFET. Its 30 V VDS supports 3S and 4S Li-ion stacks (up to 16.8 V full charge) plus surge margin, and the 16 A continuous rating covers USB-PD and fast-charge output stages. With 14.3 mOhm RDS(on), a 10 A discharge path dissipates an estimated 1.43 W, manageable with a solid copper pour under the exposed pad. In this role the MOSFET is usually driven fully on by a battery-management IC or protection controller, so conduction loss dominates and the low RDS(on) directly extends runtime. Reverse-polarity and short-circuit protection stages benefit from the robust 30 V margin and -55 C to +150 C operating range.
Recommended
DC-DC Converter Power Stage
The PowerTrench trench process balances low on-state resistance against gate charge, making the FDMC8882 usable as a high-side or low-side switch in moderate-frequency DC-DC converter power stages such as 12 V-input buck regulators. At 10 V gate drive the 14.3 mOhm channel minimizes conduction loss during the on-interval, while the trench-gate charge profile limits switching loss at typical 100 to 500 kHz frequencies. Designers should pair it with a gate driver rated for its total gate charge and verify estimated switching loss at the chosen frequency, since gate-charge-related dissipation grows linearly with frequency. Compared with FDMC8884, switching FOM is slightly worse, so the FDMC8882 favors lower-frequency or duty-cycle-heavy operating points.
Recommended
Hot-Swap and Inrush Control
In hot-swap and inrush-control circuits, the FDMC8882 acts as the series pass element controlled by a hot-swap controller that shapes the gate ramp to limit inrush current into bulk capacitance. The 30 V rating suits 12 V and 24 V-adjacent rails with margin, and the large 8 x 8 mm MLP exposed pad gives the thermal mass needed to absorb energy during controlled inrush events; safe-operating-area compliance during startup must be checked against the controller timing. Its -55 C to +150 C range and 16 A continuous rating support industrial plug-in cards and battery-hot-swap systems. Trade-off: confirm the controller fault timeout is short enough that estimated die heating during a fault never approaches the 150 C junction limit.
Recommended
Motor Drive Low-Voltage Stages
In low-voltage DC motor drives such as fans, pumps and small actuators running from 12 V or 24 V rails, the FDMC8882 can serve as a half-bridge leg switch. The 30 V VDS provides headroom for inductive kick above the rail when paired with freewheeling diodes or body-diode conduction, and 14.3 mOhm RDS(on) limits conduction heating during long PWM on-times. At 8 A average motor current, estimated conduction loss is about 0.92 W per device, requiring a copper pour of roughly one square inch per the package thermal assumptions. Gate drivers should be chosen for the trench MOSFET gate charge; the -55 C floor also benefits outdoor or refrigeration equipment exposed to cold starts.
Recommended
LED Driver Power Switching
For high-brightness LED drivers and dimming stages on 12 V and 24 V rails, the FDMC8882 works as the low-side PWM dimming switch or as the switching element in a buck LED driver power stage. The 14.3 mOhm RDS(on) minimizes the voltage drop across the switch, preserving LED forward-voltage headroom, and the 16 A rating covers multi-string arrays. Because PWM dimming typically runs at moderate frequencies (hundreds of hertz to tens of kilohertz), the conduction term dominates and the PowerTrench low RDS(on) yields the greatest benefit; estimated dissipation at 6 A is about 0.51 W, easily handled with a modest copper pour. The 30 V rating tolerates inductive kick from long LED wiring runs.
Recommended
Recommended Products Summary
Engineering reference data for FDMC8882 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDMC8884 |
|---|---|---|
| Brand | onsemi | onsemi (originally Fairchild) |
| Package | MLP 8x8 mm (PQFN) | MLP 8x8 mm (PQFN) - same |
| Drain-Source Voltage | 30 V | 30 V |
| RDS(on) Max | 14.3 mOhm | lower than FDMC8882 (optimized for low on-state resistance) |
| Gate Charge Optimization | Low RDS(on) focused | low gate charge maintained for superior switching performance |
Key Differentiators
- PowerTrench process minimizes on-state resistance (vs Legacy planar 30 V MOSFETs)
- Package thermal performance (vs SOT-23 / SO-8 MOSFETs)
- Family upgrade path with FDMC8884 (vs FDMC8884)
Design Notes
The FDMC8882's 16 A and 14.3 mOhm ratings assume effective heat removal through the 8 x 8 mm MLP exposed pad. Estimated conduction loss at 10 A is about 1.43 W; with a typical PQFN theta_JA in the tens of C/W on a minimal layout, the junction rise can exceed 100 C. Use multiple thermal vias under the exposed pad and at least 1 square inch of copper on the power plane, then verify RDS(on) at hot, since it rises roughly 30-40 percent near 125 C junction temperature.
Do not drive the gate at marginal voltages: trench MOSFETs need full enhancement (typically 10 V) to reach the specified 14.3 mOhm RDS(on); driving at 4.5 V increases conduction loss significantly. Also confirm that the 30 V VDS rating covers your worst-case inductive transient - battery-pack and motor loads commonly overshoot the nominal rail, so clamp or snub where necessary.
Keep the gate-drive loop short and place the gate resistor (a few ohms) close to the gate pin to damp ringing. For switching applications, minimize the power loop area between input capacitance, the FDMC8882, and the load/freewheeling path to reduce parasitic inductance-induced voltage spikes. Follow the recommended land pattern in the onsemi datasheet exactly to maintain the thermal and current ratings.
Compliance Information
Compliance details were not stated in the retrieved web data; consult the onsemi product page and official declarations.
