IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon
MPN: IGD06N60TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.96 | $96.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.62 | $620.00 |
Drop-in alternatives for IGD06N60TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IKD06N60RATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IKD10N60RC2ATMA1
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View Datasheet →IDD06SG60CXTMA2
✅ Drop-In✓ In Stock
$1.54 / Unit
View Datasheet →STGD5H60DF
✅ Drop-In📋 Reference alternative (not in catalog)
IRG4RC10SDTRPBF
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IGD06N60TATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 |
| IGBT Type | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 12 A |
| Continuous Collector Current (IC) at TC=100°C | 6 A |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | 88 W |
| Gate-Emitter Voltage (VGE) | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode |
| Operating Junction Temperature | -40 °C to +175 °C |
| Storage Temperature | -55 °C to +150 °C |
| Package | PG-TO252-3-11 (DPAK / TO-252) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IGD06N60TATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input (15 V typical drive) |
| Pin 2 | Collector (C) — High-voltage collector terminal (also tied to tab) |
| Pin 3 | Emitter (E) — Reference for gate drive, return for load current |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IGD06N60TATMA1 is suitable for 7 applications: PFC Boost Converter Stage, Induction-Heating Inverter Half-Bridge, Washing-Machine Motor Drive, Refrigerator Compressor Inverter, Air-Conditioner Outdoor-Unit Inverter, Solar Micro-Inverter DC-DC Stage, Dish-Washer Drain Pump Inverter.
PFC Boost Converter Stage
The IGD06N60TATMA1's 600 V VCE rating and 6 A continuous collector current make it well suited for the boost switch in CCM/DCM Power Factor Correction (PFC) stages used in 110/220 VAC offline SMPS and digital TV/PC power supplies. Its TRENCHSTOP IGBT3 technology delivers a low 1.5 V VCE(sat) at rated current, reducing conduction loss versus planar NPT IGBTs by approximately 30%. The integrated soft-recovery anti-parallel diode simplifies the boost-inductor current-freewheeling path and reduces reverse-recovery losses that would otherwise degrade PFC power factor at high line. Placed between the bridge-rectified 400 VDC bus and the boost inductor, the IGD06N60TATMA1 supports PFC stages in the 300 W to 1500 W range at switching frequencies of 16 to 40 kHz. Compared with a 600 V MOSFET, the IGBT's lower conduction drop at 6 A reduces total PFC-stage loss, though its switching loss penalty makes it less suitable above 70 kHz.
Recommended
Induction-Heating Inverter Half-Bridge
The IGD06N60TATMA1 is commonly deployed in the low-side and high-side switch positions of series-resonant half-bridge induction-heating inverters used in induction cooktops and rice cookers. Its 600 V breakdown and 6 A current rating suit 1.5 kW to 3 kW single-burner or multi-burner cooktop designs operating from a 220 VAC rectified 310 VDC bus. The TRENCHSTOP IGBT3 cell delivers 25 to 50% lower switching loss than NPT IGBTs in zero-voltage-switching (ZVS) or zero-current-switching (ZCS) induction-heating topologies running at 20 to 50 kHz. The integrated soft-recovery anti-parallel diode eliminates the need for a separate freewheeling diode across the IGBT. For best results, gate-drive a 15 V emitter-referenced supply with a 10 ohm gate resistor to limit ringing, and place a 100 V / 1 nF snubber across the C-E terminals.
Recommended
Washing-Machine Motor Drive
The IGD06N60TATMA1 fits the variable-frequency inverter section of direct-drive washing-machine motors operating from 220 VAC. Its 600 V / 6 A ratings support inverter legs driving a 3-phase induction motor in the 200 W to 1500 W range, and the TO-252 (DPAK) surface-mount package suits the small PCB area inside the appliance chassis. The integrated anti-parallel diode simplifies the inverter leg topology, and the TRENCHSTOP IGBT3 soft-recovery characteristics reduce EMI in the IGBT's turn-on event, easing compliance with home-appliance EMC regulations. Compared to discrete MOSFET bridges, the IGBT's lower conduction drop at the motor drive's typical 5 to 10 kHz PWM frequency keeps inverter efficiency above 95%. For best results, use an SOI gate driver such as the 6EDL04N02PRXUMA1 with 1 kV isolation and built-in short-circuit protection.
Recommended
Refrigerator Compressor Inverter
The IGD06N60TATMA1 is widely used in the inverter stage of variable-speed refrigerator compressors, where its 600 V breakdown handles the 310 VDC bus from 220 VAC mains. Its 6 A continuous collector current supports compressor inverter legs in 100 W to 500 W refrigerator compressors, while the TO-252 (DPAK) package handles the thermal load at low ambient temperatures inside the appliance. The TRENCHSTOP IGBT3's low VCE(sat) reduces inverter losses, keeping the compressor's inverter running at 92 to 95% efficiency and reducing cabinet heat. The integrated soft-recovery diode enables clean switching at 4 to 8 kHz PWM frequencies typical of residential refrigerator inverters. When the design calls for 24/7 continuous operation, the 175 °C maximum junction temperature and TRENCHSTOP ruggedness ensure long-term reliability under compressor-startup stress.
Recommended
Air-Conditioner Outdoor-Unit Inverter
The IGD06N60TATMA1 fits the inverter stage of residential split-system air-conditioner outdoor units, which drive the compressor and outdoor fan. Its 600 V / 6 A ratings support 1 kW to 3 kW class inverter legs, and the TO-252 (DPAK) footprint supports the higher-power 2-layer or 4-layer FR-4 PCBs typical of outdoor-unit designs. The TRENCHSTOP IGBT3 technology offers fast turn-on and soft turn-off that simplifies EMI-filter design, which is critical for outdoor units that must meet stringent conducted-emission standards. The integrated soft-recovery diode eliminates an external freewheeling diode in the inverter leg. Placed as the low-side switch in each of three inverter legs, the IGD06N60TATMA1 operates at 5 to 16 kHz PWM and can be combined with an IRAM-style IPM or a discrete SOI gate driver for compact designs.
Recommended
Solar Micro-Inverter DC-DC Stage
The IGD06N60TATMA1 is used in the DC-DC stage of single-panel solar micro-inverters, where its 600 V rating comfortably exceeds the 600 VDC open-circuit voltage of 60-cell PV strings. Its 6 A continuous current suits 200 W to 600 W micro-inverter designs operating from 25 V to 45 VDC input and stepping up to a 400 VDC link for the downstream grid-tie inverter. The integrated anti-parallel diode reduces part count in the flyback or boost DC-DC topology. The TRENCHSTOP IGBT3's low conduction drop helps maintain conversion efficiency above 95% even at high-line 45 VDC input. For higher switching frequencies above 50 kHz, consider the IKD06N60RATMA1 as an alternative, which trades lower VCE(sat) for lower Eoff. Either way, the DPAK package enables compact, sealed micro-inverter enclosures that withstand outdoor humidity and temperature swings.
Recommended
Dish-Washer Drain Pump Inverter
The IGD06N60TATMA1 is well matched to small inverter stages that drive drain and circulation pumps in dish-washer appliances. Its 600 V rating handles the rectified 220 VAC bus while delivering 6 A for 100 W to 300 W class pump motors. The TO-252 (DPAK) package supports single-layer PCB layouts typical of compact appliance control boards, and its integrated anti-parallel diode eliminates the need for a freewheeling diode in the inverter leg. The TRENCHSTOP IGBT3's low VCE(sat) reduces the I²R losses that would otherwise require a larger heatsink, and its fast switching speeds enable 8 to 20 kHz PWM for smoother pump speed control. For best results, gate-drive with a low-side SOI driver such as the 2EDN8534FXTMA1 to keep the total BOM cost and PCB area low in this cost-sensitive appliance segment.
Recommended
Recommended Products Summary
Engineering reference data for IGD06N60TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKD06N60RATMA1 | IKD10N60RC2ATMA1 | IDD06SG60CXTMA2 | STGD5H60DF | IRG4RC10SDTRPBF |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | DPAK - same | DPAK - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | Infineon Technologies (legacy IR) |
| VCE Rating | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous IC at TC=100C | 6 A | 6 A | 10 A | 6 A | 5 A | 8 A |
| VCE(sat) typical | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.6 V | 1.7 V |
| Integrated Diode | Yes (soft recovery) | Yes (RC-IGBT) | Yes (RC-IGBT) | Yes (Rapid 1) | Yes | Yes (NPT) |
| IGBT Technology | TRENCHSTOP IGBT3 | RC-IGBT3 | RC-IGBT3 | IGBT + Rapid 1 diode | Planar NPT IGBT | Planar NPT IGBT |
| Unit Price (qty 1) | $1.42 | $1.55 | $2.10 | $1.65 | $1.30 | $1.85 |
Key Differentiators
- TRENCHSTOP IGBT3 cell geometry with integrated soft-recovery diode (vs STGD5H60DF)
- Same TO-252 (DPAK) footprint as legacy IRG4RC10SD (vs IRG4RC10SDTRPBF)
- Co-packaged anti-parallel diode eliminates external component (vs Discrete MOSFET bridge with external freewheeling diode)
Design Notes
Estimated: at IC=6 A, VCE(sat)=1.5 V typical, the IGD06N60TATMA1 dissipates approximately 9 W of conduction loss in continuous conduction mode. The DPAK (TO-252) package has a typical RθJA of approximately 50 C/W on a standard 6 cm² 2-oz copper-pour footprint, producing a 75 °C junction-temperature rise above 25 °C ambient. To stay within the 175 °C maximum junction, derate case temperature to 100 °C, which corresponds to roughly 50 °C ambient with the recommended footprint. Increase the copper pad to 12 cm² on 4-layer boards to lower RθJA toward 35 C/W for higher-power applications.
Use a 15 V gate-drive referenced to emitter with a 10 to 22 Ω gate resistor to limit ringing and control dV/dt. Keep the gate-driver-to-IGBT loop area below 50 mm² to minimize parasitic inductance, which can cause Miller-effect turn-on during the opposite transistor's turn-on event. Place a 0.1 µF X7R ceramic decoupling capacitor directly between VCC and VEE pins of the gate driver. For hard-switching applications above 5 kHz, add a 100 V / 1 nF R-C snubber across the collector-emitter to limit voltage overshoot.
Do not exceed ±20 V VGE absolute maximum: even brief transients above 20 V can puncture the gate oxide and destroy the device permanently. Never parallel IGD06N60TATMA1 devices without emitter ballast resistors - the part has positive temperature coefficient of VCE(sat) but insufficient thermal coefficient for safe paralleling without balancing. Avoid operating below the -40 °C minimum junction temperature, which can cause MOSFET-mode latch-up during cold-start. For applications where the IGBT must switch inductive loads, always provide a flyback path (the integrated diode handles this in inverter legs) and respect the 18 A pulsed-collector-current rating.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified; this part targets consumer and appliance applications rather than automotive. Halogen-free status not explicitly stated in available data - set to unknown.
