IPN95R2K0P7ATMA1 - 950V N-Channel CoolMOS P7 | Infineon
MPN: IPN95R2K0P7ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.18 | $11.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
IPN95R2K0P7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts energy by modulating current flow between its drain and source terminals under gate drive. Super-junction (SJ) MOSFETs such as the CoolMOS P7 family replace the conventional planar DMOS drift region with alternating P/N epitaxial columns that simultaneously reduce on-resistance per unit area and shrink gate charge, yielding figures of merit that far exceed those of standard 900V-1000V planar MOSFETs. The technology hierarchy is: power MOSFET -> super-junction MOSFET -> high-voltage MOSFET -> discrete semiconductor.
Key differentiating specifications include a maximum drain-source voltage VDS of 950V, continuous drain current ID of 4 A at case temperature (Tc), pulsed drain current (IDM, avalanche and pulsed conditions not specified in provided data, see ), and a maximum static power dissipation of 7 W (Tc). The PG-SOT223 package provides a low thermal resistance path through the central tab to a copper pour on the PCB, enabling efficient heat extraction in a compact SOT-223 footprint measuring approximately 6.5 mm x 3.5 mm.
Typical applications include low-power SMPS adapters, auxiliary power supplies for white goods and industrial equipment, LED lighting drivers, smart-meter power rails, and 5V/12V/19V flyback converters fed directly from rectified 230V/110V AC mains. The 950V rating provides substantial design margin for surge events on 230V rectified rails (peak 325V) and supports quasi-resonant flyback topologies that clamp leakage-energy spikes below 950V.
When designing with this part, ensure the gate is driven to at least 10V for full enhancement into the rated 2000 mOhm R_DS(on). Place a 10-100 kohm gate-source resistor to suppress unintended turn-on from dv/dt-induced Miller current, and route the gate drive return to the source pad directly to minimize common-source inductance.
Drop-in alternatives for IPN95R2K0P7ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPN95R2K0P7
β Drop-Inπ Reference alternative (not in catalog)
IPL95R2K0P7ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
NDD02N90S
β Drop-Inπ Reference alternative (not in catalog)
IPN95R2K0P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 950 V |
| Continuous Drain Current (ID, Tc) | 4 A |
| Static Power Dissipation (Ptot) | 7 W (Tc) |
| On-Resistance (RDS(on)) | 2000 mOhm (max, per Infineon part page) |
| Technology | Super-Junction (CoolMOS) |
| Package | PG-SOT223 (3-pin, 2+tab) |
| Mounting Type | Surface Mount |
| Operating Mode | Enhancement-mode |
| Gate Drive | Voltage-controlled (MOSFET gate) |
| Series / Family Member | IPN95R2K0P7 (non-automotive) |
| Application Target | Low-power SMPS, flyback converters |
| Packing | Tape & Reel (per DigiKey listing) |
IPN95R2K0P7ATMA1 Pin Configuration
| Pin 1 | Gate β MOSFET gate drive input (10V typical for full enhancement) |
| Pin 2 | Drain β Drain terminal, electrically connected to the center tab |
| Pin 3 | Source β Source terminal (return for gate drive) |
| Pin TAB | Drain (tab) β Center metal tab electrically tied to Drain; solder to copper pour for thermal dissipation |
Safe Operating Area (DC, per Infineon datasheet)
Typical Applications
IPN95R2K0P7ATMA1 is suitable for 6 applications: Low-Power Flyback SMPS Adapter, Auxiliary Power Supply for White Goods, LED Lighting Drivers, Smart Meter Power Supply, Industrial Auxiliary Supplies (24V / 48V), Standby Power for Set-Top Box / White Box PC.
Low-Power Flyback SMPS Adapter
The IPN95R2K0P7ATMA1's 950V VDS rating and 2000 mOhm RDS(on) make it well suited for low-power flyback SMPS adapters fed from universal 85-265V AC mains. Placed on the primary side of the transformer with a controller such as the Infineon ICE2QR0680Z, the MOSFET switches the 325V rectified rail at 50-100 kHz; the 950V blocking voltage provides margin above the rectified peak plus transformer leakage spike, simplifying snubber design and reducing standby loss compared with 800V alternatives. The 4A continuous drain rating supports up to ~30W output before thermal limits demand a TO-220 upgrade.
Recommended
Auxiliary Power Supply for White Goods
The IPN95R2K0P7ATMA1 fits auxiliary 5V/12V/19V standby rails in washing machines, refrigerators, and HVAC controllers where the power supply runs directly from rectified mains without a PFC stage. Its 950V rating eliminates avalanche risk during cold-start surge events common in appliance environments, while the 2000 mOhm on-resistance and 4A drain rating cover standby output levels up to 10W. Surface-mount PG-SOT223 packaging enables automated assembly for high-volume appliance production.
Recommended
LED Lighting Drivers
The IPN95R2K0P7ATMA1 serves as the primary-side switch in isolated LED driver modules for commercial and industrial luminaires operating from 230V AC mains. The CoolMOS P7 super-junction technology minimizes switching losses at the 50-100 kHz frequencies typical of single-stage PFC + flyback LED topologies, supporting higher efficiency under the EU Ecodesign and ENERGY STAR requirements. The 950V VDS margin reduces field-failure rate from line-voltage transients and surge events common in commercial lighting installations.
Recommended
Smart Meter Power Supply
The IPN95R2K0P7ATMA1 powers the always-on auxiliary supply inside single-phase and poly-phase electricity meters, where 950V blocking voltage isolates the meter's sensitive measurement circuitry from harsh line-side disturbances. The 4A continuous drain rating supports the meter's communication module peak load (PLC, RF sub-GHz, or cellular modem bursts) while keeping standby consumption below 100mW. PG-SOT223 packaging withstands the high-temperature IR-reflow profiles required by smart-meter contract manufacturers.
Recommended
Industrial Auxiliary Supplies (24V / 48V)
The IPN95R2K0P7ATMA1 enables compact auxiliary supplies inside industrial PLCs, motor drives, and sensor enclosures fed from 230V AC or 380V three-phase rectified rails. The 950V VDS rating tolerates voltage spikes from relay switching and motor back-EMF coupling through the supply transformer, improving field reliability in factory-automation environments. The PG-SOT223 footprint allows integration into space-constrained DIN-rail power modules where TO-220 packages would exceed the enclosure's height profile.
Recommended
Standby Power for Set-Top Box / White Box PC
The IPN95R2K0P7ATMA1 powers the always-on 5V standby rail inside set-top boxes, white-box PCs, and home-network equipment that must remain responsive to remote-control or wake-on-LAN commands. The CoolMOS P7 super-junction design delivers high efficiency at light load thanks to its low gate charge Qg, supporting the <500 mW standby targets of EU Regulation 2023/826. The 950V VDS rating allows direct connection to universal-input mains without a separate PFC stage, reducing BOM cost.
Recommended
Recommended Products Summary
Engineering reference data for IPN95R2K0P7ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPN95R2K0P7 | IPL95R2K0P7ATMA1 | NDD02N90S |
|---|---|---|---|---|
| Package | PG-SOT223 | PG-SOT223 - same | PG-SOT223 - same | SOT-223 - same footprint |
| Brand | Infineon | Infineon - same | Infineon - same | onsemi - cross-brand |
| Drain-Source Voltage VDS (max) | 950 V | 950 V | 950 V | 900 V |
| Continuous Drain Current ID (Tc) | 4 A | 4 A | 4 A | 2 A |
| On-Resistance RDS(on) max | 2000 mOhm | 2000 mOhm | 2000 mOhm | ~2900 mOhm |
| Technology | CoolMOS P7 (Super-Junction) | CoolMOS P7 (SJ) | CoolMOS P7 (SJ) | SJ (onsemi NDFA series) |
| Gate Drive (typ) | 10 V | 10 V | 10 V | 10 V |
Key Differentiators
- 950V VDS rating provides wider voltage margin than 800V/900V alternatives (vs NDD02N90S (900V))
- CoolMOS P7 super-junction technology minimizes gate charge and switching loss (vs Planar 900V MOSFETs of similar RDS(on))
- Surface-mount PG-SOT223 enables automated high-volume assembly (vs IPA95R2K0P7 (PG-TO220 through-hole))
Design Notes
Estimated: at 4A continuous drain current and 950V worst-case conduction, instantaneous dissipation reaches I^2*R = 4^2 * 2.0 = 32W if hard-switched at full VDS - far above the 7W Tc rating. In practice, flyback operation reduces duty cycle to <50% and the MOSFET is fully on only during the demagnetization phase. The SOT-223 tab should be soldered to at least 100 mm^2 of 2 oz copper pour to keep junction temperature below 125C; for continuous 7W dissipation an external clip-on heatsink is required.
Route the gate drive return directly from the source pad (pin 3) to the controller's ground reference; avoid sharing the source return with high-current drain paths. A 10-100 kohm resistor between gate and source prevents unintended turn-on from dv/dt-induced Miller current during fast drain-voltage transitions. Place the gate resistor physically within 5mm of the gate pad to minimize parasitic trace inductance.
Do not drive the gate below 8V or above 20V - underdrive increases RDS(on) and conduction loss quadratically, while overdrive can punch through the gate oxide. Verify the SOT-223 tab-to-drain connection is intact on each unit during PCBA inspection, since a missing tab solder joint creates a thermal hotspot that may not be caught by electrical test. Ensure the rectified rail peak plus transformer leakage spike stays below 90% of 950V VDS rating (855V) for production margin.
Minimize the drain-source switching loop area to reduce radiated EMI; use a compact snubber (RCD or active clamp) sized for the transformer's leakage inductance. Place a Y-cap from the primary side to earth ground near the MOSFET to shunt common-mode noise, and route the rectified AC input traces on one PCB layer with a continuous ground plane underneath to act as a return path.
Compliance Information
The provided verified web data does not include explicit RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-mineral status; consult the Infineon product page or request a material declaration before committing to volume production. The 'N' suffix in IPN indicates non-automotive grade.
