IR2011SPBF - 200V High/Low-Side Gate Driver, 1A, 8-SOIC | Infineon
MPN: IR2011SPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.05 | $2.05 |
| 10 | $1.84 | $18.40 |
| 100 | $1.65 | $165.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.35 | $1,350.00 |
| 3,000 | $1.18 | $3,540.00 |
Drop-in alternatives for IR2011SPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IR2011STRPBF
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✅ Drop-In📋 Reference alternative (not in catalog)
IR2127SPBF
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View Datasheet →IR2011SPBF Maximum Ratings & Electrical Characteristics
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | High-Side and Low-Side, Inverting |
| Number of Outputs | 2 |
| Offset Voltage (High-Side, max) | 200 V |
| Gate Drive Supply Voltage (VCC, VBS) | 10 V to 20 V |
| Output Source/Sink Current | 1 A / 1 A (typ) |
| Propagation Delay (typ) | 80 ns |
| Input Logic Compatibility | CMOS / LSTTL, down to 3.0 V |
| dV/dt Immunity | Yes |
| Negative Transient Tolerance | Yes (on VS pin) |
| Operating Temperature Range | -40 C to +125 C |
| Package | 8-SOIC (DSO-8) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Tube / Reel Packaging | Tube (per Infineon PBF convention) |
IR2011SPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | HIN — High-side logic input (inverting, 3.0 V CMOS/LSTTL compatible) |
| Pin 3 | LIN — Low-side logic input (inverting, 3.0 V CMOS/LSTTL compatible) |
| Pin 4 | GND — Ground reference for logic and low-side driver |
| Pin 5 | LO — Low-side gate drive output (inverts LIN) |
| Pin 6 | VS — High-side floating supply return (switching node) |
| Pin 7 | HO — High-side gate drive output (inverts HIN) |
| Pin 8 | VBS — High-side floating supply (bootstrap to VS) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2011SPBF is suitable for 6 applications: Class D Audio Amplifiers, Half-Bridge DC-DC Converters, BLDC / PMSM Motor Drive Half-Bridge, Switched-Mode Power Supplies (SMPS), Solar Micro-Inverters, Telecom 48 V Bus Converters.
Class D Audio Amplifiers
The IR2011SPBF's 1 A peak source/sink current and 80 ns matched propagation delay make it a strong fit for driving the output MOSFETs of Class D audio amplifiers, where two IR2011 ICs typically drive a full-bridge output stage switching at 250-500 kHz. The 200 V offset rating easily covers +/- 50 V audio rails. The inverting logic polarity requires careful PWM timing, but provides clean dead-time control when paired with a complementary PWM generator. The 8-SOIC footprint keeps the driver section compact on the amplifier board, and the floating channel dV/dt immunity rejects the large dv/dt transients generated by the output stage switching transitions.
Recommended
Half-Bridge DC-DC Converters
In a half-bridge DC-DC converter the IR2011SPBF drives a high-side and a low-side N-channel MOSFET referenced to a switching node, with a bootstrap capacitor supplying the floating high-side channel. The 200 V rating covers 100 V input bus converters common in telecom and industrial 48-110 V systems. The 1 A peak current is sufficient to switch MOSFETs such as IRFP250MPBF at up to 500 kHz with reasonable switching losses. The matched propagation delays between HO and LO simplify synchronous timing, and the negative transient tolerance on VS protects the driver during hard-switched commutation events.
Recommended
BLDC / PMSM Motor Drive Half-Bridge
Each phase leg of a small BLDC or PMSM motor drive uses a half-bridge configuration that the IR2011SPBF can drive directly when operating below 200 V bus. The 1 A peak current comfortably switches small motor-drive MOSFETs such as IRLB8748PBF or IRFR220NTRPBF, while the floating-channel bootstrap architecture produces the high-side gate voltage from a single low-side supply. For 3-phase drives, three IR2011 ICs (or one IR2130STRPBF) replace a discrete driver board. The matched 80 ns propagation delays keep dead-time symmetric across all phases, reducing torque ripple in the motor.
Recommended
Switched-Mode Power Supplies (SMPS)
The IR2011SPBF is used in offline and DC-DC switched-mode power supplies as the gate driver for the primary-side half-bridge or full-bridge switching stage. The 200 V offset rating supports 100-150 V input bus converters, and the 1 A peak output drives TO-220 or D2PAK MOSFETs at switching frequencies of 50-200 kHz. The dV/dt immunity of the floating channel prevents false triggering of the high-side driver during fast switching edges, a common failure mode in poorly designed SMPS. Logic inputs are compatible with standard 3.3 V PWM controller outputs from devices like the UCC25640 or NCP1396.
Recommended
Solar Micro-Inverters
In small solar micro-inverters (typically 200-400 W per panel) the IR2011SPBF drives the half-bridge or full-bridge stage that converts the panel's 30-60 V DC output to grid-tied 110/220 V AC. The 200 V offset rating accommodates the DC bus after boost conversion, and the 1 A peak current is sufficient for the MOSFETs used in this power range. The matched 80 ns propagation delays ensure that the high-side and low-side MOSFETs switch symmetrically, reducing circulating currents and EMI. The negative transient tolerance on VS is essential when the high-side MOSFET turns off and the body-diode reverse recovery of the low-side MOSFET creates a brief negative spike on the switching node.
Recommended
Telecom 48 V Bus Converters
The IR2011SPBF fits telecom 48 V bus converter designs as the half-bridge driver for the primary side of an isolated DC-DC topology. The 200 V rating comfortably handles the 48-75 V telecom bus plus transients, and the 1 A peak current drives TO-220 or D2PAK 100-200 V MOSFETs used in this application space. The 8-SOIC footprint is advantageous for high-density brick-style converters where the driver must fit on a small daughter-board. The matched propagation delays keep the duty cycle accurate across load steps, which is critical for closed-loop control bandwidth in digital point-of-load systems.
Recommended
Recommended Products Summary
Engineering reference data for IR2011SPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2011STRPBF | IRS2184SPBF | IRS21844SPBF | IR2127SPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (DSO-8) | 8-SOIC (DSO-8) - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Offset Voltage (max) | 200 V | 200 V | 600 V | 600 V | 200 V |
| Output Source/Sink Current | 1 A / 1 A | 1 A / 1 A | 1.4 A / 1.8 A | 1.9 A / 2.3 A | 0.3 A / 0.6 A |
| Propagation Delay (typ) | 80 ns | 80 ns | 40 ns | 270 ns | 200 ns |
| Logic Polarity | Inverting | Inverting | Non-inverting | Non-inverting | Non-inverting |
| Configuration | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Single high-side |
| Gate Drive Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Approx Unit Price (qty 100) | USD 1.65 | USD 1.65 (similar) | USD 1.80 | USD 2.40 | USD 1.50 |
Key Differentiators
- Compact 8-SOIC package for 200 V half-bridge applications (vs IR2110)
- Higher 600 V headroom when needed (vs IRS2184SPBF)
- True half-bridge driver (vs single high-side) (vs IR2127SPBF)
Design Notes
Estimated: at VCC = 15 V and a switching frequency of 100 kHz driving a MOSFET with Qg = 50 nC (typical for TO-220 devices), the IR2011SPBF draws approximately 0.5 mA average quiescent current plus gate-charge current (Qg x f = 5 mA), totaling ~5.5 mA. A local 0.1 uF ceramic decoupling capacitor on VCC placed within 5 mm of the IC is required to suppress switching noise. For higher gate-charge loads above 100 nC, increase the bootstrap capacitor proportionally to maintain VBS above the UVLO threshold of typically 8-9 V during the high-side on-time.
The IR2011SPBF in 8-SOIC has a thermal resistance of approximately 150 C/W (theta_JA for a standard JEDEC test board). At 1 A peak gate current switching at 200 kHz with Qg = 50 nC, internal dissipation is approximately 20 mW - well within the 470 mW package rating. The thermal pad (pin 4 GND) should be soldered to a copper pour on the PCB, and for designs operating at the upper temperature limit (125 C) ensure the IC is kept away from heat sources such as power MOSFETs and magnetics. No external heatsink is normally required.
Place the bootstrap diode (D_BS) and bootstrap capacitor (C_BS) as close as possible to pins 6 (VS) and 8 (VBS) to minimize parasitic inductance. The gate-drive loop area for the high-side MOSFET (HO -> gate -> source -> VS -> back to VBS) must be minimized using a tight gate-source trace layout. A 10 ohm to 47 ohm gate resistor in series with each gate drive output (HO and LO) reduces ringing and dampens high-frequency oscillations. The VCC bypass should be a 1 uF ceramic in parallel with a 10 uF tantalum or aluminum polymer capacitor for low-frequency bulk holdup.
Do not exceed the 200 V absolute maximum rating on the VS pin - add a transient voltage suppressor (TVS) such as a P6KE200A between VS and GND if the application generates ringing above 200 V. Do not drive the IR2011 inputs with signals above VCC or below GND - use a logic-level translator if the controller operates at 5 V while VCC is 15 V. Never operate without the bootstrap diode and capacitor on VBS - the high-side driver will not function without the floating supply, and the device may latch up incorrectly if VBS is left floating.
Compliance Information
RoHS compliance indicated by PBF suffix per Infineon datasheet. Not AEC-Q100 qualified - this is an industrial/consumer grade part. For automotive applications, contact Infineon for the automotive-grade equivalent in the IR2011 family.
