IRF7424PBF -30V P-Channel HEXFET MOSFET SO-8 | Infineon
MPN: IRF7424PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.45 | $14.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.79 | $790.00 |
IRF7424PBF Overview
A P-channel power MOSFET is a voltage-controlled semiconductor switch that conducts when its gate is pulled below the source potential. Within the power-management hierarchy, it sits as a discrete transistor serving as a switching element or high-side load switch inside a broader power management design, complementing controllers, drivers, and regulators.
Key features include ultra-low on-resistance of 13.5 mOhms at VGS = -10 V, a total gate charge of 75 nC, 2.5 W power dissipation (Ta), and a planar cell structure that delivers a wide safe operating area. The PbF (lead-free) suffix indicates a RoHS-aligned, lead-free termination finish, and the device is qualified according to JEDEC standards.
The HEXFET planar technology uses a vertically structured cellular diffusion process optimized for switching below 100 kHz. The SO-8 package is built on a customized leadframe that improves thermal characteristics versus standard SO-8 bodies, supporting vapor phase, infrared, and wave soldering processes. This enhanced leadframe allows multiple dies and dramatically reduced board space in power applications.
Typical applications include battery and load management circuits, high-side power switches in portable and industrial equipment, DC power switching below 100 kHz, and reverse-polarity or power-path protection where a P-channel device avoids the need for a charge pump. The -30 V rating covers 12 V and 24 V bus environments with margin.
Design consideration: as a planar P-channel MOSFET optimized for sub-100 kHz switching, it is not the lowest-Qg device available (75 nC); for very high-frequency converters consider a trench-FET alternative, but for robust load switching its wide SOA is an advantage.
This page synthesizes distributor pricing, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with data verified as of 2026-09-11.
Drop-in alternatives for IRF7424PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7424
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
VBA2311
β Drop-Inπ Reference alternative (not in catalog)
IRF7424PBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| VDS Drain-Source Voltage | -30 V |
| Continuous Drain Current (Ta) | -11 A |
| RDS(on) Max at VGS = -10 V | 13.5 mOhms |
| Total Gate Charge Qg | 75 nC |
| Power Dissipation (Ta) | 2.5 W |
| Technology | HEXFET planar, optimized for switching below 100 kHz |
| Package | 8-SO (SO-8) surface mount |
| Mounting Type | Surface Mount |
| Configuration | Single FET |
| Soldering Methods | Vapor phase, infrared, wave soldering |
| Qualification | Product qualification according to JEDEC standard |
| Lead Finish | PbF (lead-free) |
| RoHS Status | Compliant (PbF lead-free part) |
IRF7424PBF Pin Configuration
| Pin 1 | Source β Source terminal (common with pins 2 and 3) |
| Pin 2 | Source β Source terminal (common with pins 1 and 3) |
| Pin 3 | Source β Source terminal (common with pins 1 and 2) |
| Pin 4 | Gate β Gate terminal, driven negative relative to source to turn on |
| Pin 5 | Drain β Drain terminal (common with pins 6, 7, 8 via leadframe) |
| Pin 6 | Drain β Drain terminal (common with pins 5, 7, 8) |
| Pin 7 | Drain β Drain terminal (common with pins 5, 6, 8) |
| Pin 8 | Drain β Drain terminal (common with pins 5, 6, 7) |
Safe Operating Area (IRF7424PBF, estimated from datasheet limits)
Typical Applications
IRF7424PBF is suitable for 6 applications: Battery and Load Management, High-Side Power Switching, Low-Frequency DC-DC Power Stages, Reverse Polarity and Power-Path Protection, Industrial 24 V Bus Switching, Hot-Swap and Inrush-Limited Power Entry.
Battery and Load Management
The IRF7424PBF was explicitly designed by Infineon for battery and load management applications. Its P-channel structure enables a high-side switch that can be driven by simply pulling the gate low relative to the battery positive terminal, eliminating bootstrap capacitors and charge pumps required by N-channel equivalents. With -30 V VDS it tolerates battery transients on 12 V systems, and its 13.5 mOhms RDS(on) keeps conduction losses low during sustained load current - at 10 A the loss is approximately 1.35 W against a 2.5 W dissipation rating. In load-switch circuits, place the device between the battery and load with a gate pull-up resistor to the battery and a controller-driven NPN or NMOS pulling the gate low for turn-on.
Recommended
High-Side Power Switching
As a high-side switch on 12 V or 24 V rails, the IRF7424PBF's P-channel topology simplifies gate drive: a resistor divider or small signal transistor referenced to the rail turns the device on and off. The planar cell structure provides a wide safe operating area (SOA), which is valuable when the switch must survive inrush currents from capacitive loads or motor starts that would stress narrow-SOA trench devices. The -11 A continuous current rating and 13.5 mOhms on-resistance support tens of amperes in pulsed operation. A key trade-off is the 75 nC gate charge, which requires a gate driver or pull-down network capable of sinking that charge quickly to limit switching transition times and associated losses.
Recommended
Low-Frequency DC-DC Power Stages
The IRF7424PBF is optimized by Infineon for switching below 100 kHz, making it appropriate for low-frequency DC-DC converter stages and point-of-load power paths where a P-channel main switch avoids complex drive circuitry. In a buck converter using a P-channel high-side MOSFET, the IRF7424PBF's -30 V rating provides margin on wide-input 12 V and 24 V buses. Its 75 nC total gate charge is acceptable at sub-100 kHz frequencies where switching losses remain a small fraction of the loss budget. Engineers should budget gate-drive current as Qg x fsw; at 50 kHz this is roughly 3.75 mA of average gate-drive current, easily handled by low-cost PWM controllers.
Recommended
Reverse Polarity and Power-Path Protection
P-channel MOSFETs like the IRF7424PBF are widely used in reverse-polarity protection and ideal-diode power-path circuits. Placed in the positive supply line with drain to the supply and source to the load, the body diode conducts initially and the channel then enhances, giving a low 13.5 mOhms drop that is far lower than a series Schottky diode - at 5 A a Schottky may dissipate 2.5-3.5 W while the IRF7424PBF dissipates about 0.34 W. The -30 V VDS rating exceeds the transient requirements of most 12 V vehicular and industrial inputs. Add a zener clamp on the gate-source if the input can exceed 20 V gate-source differential.
Recommended
Industrial 24 V Bus Switching
Industrial control panels and factory automation systems switch loads on 24 V buses where the IRF7424PBF's -30 V rating leaves only modest margin; verify transients with clamping if surge events are expected, or select a higher-voltage P-channel part for harsher environments. Within rating, the device delivers -11 A continuous and 13.5 mOhms conduction, sufficient for relays, valves, and indicator loads. The SO-8 enhanced-leadframe package dissipates up to 2.5 W at Ta, and Infineon notes the package supports wave soldering, valuable for mixed-technology industrial boards. JEDEC-level product qualification supports the reliability documentation many industrial customers require in their sourcing procedures.
Recommended
Hot-Swap and Inrush-Limited Power Entry
In hot-swap and controlled power-entry circuits, the IRF7424PBF operates as the pass element whose gate is slew-controlled to limit inrush current into downstream bulk capacitance. The planar HEXFET's wide SOA is the key benefit here: it tolerates simultaneous high drain voltage and drain current during the controlled ramp far better than narrow-SOA trench parts. Design the gate RC so the inrush current (C_load x dV/dt) stays inside the SOA boundary at maximum ambient temperature, and verify junction temperature using the SO-8 thermal data in the Infineon datasheet. The 75 nC gate charge determines the gate-drive timing network values and the achievable slew rate.
Recommended
Recommended Products Summary
Engineering reference data for IRF7424PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7424 | VBA2311 |
|---|---|---|---|
| Package | SO-8 (8-SO) surface mount | SO-8 - same | SO-8 - same |
| Brand | Infineon | Infineon | Will Semiconductor |
| VDS | -30 V | -30 V | -30 V |
Key Differentiators
- RoHS-compliant lead-free version of a proven planar die (vs IRF7424)
- Wide SOA from planar cell structure (vs VBA2311)
- Ultra-low 13.5 mOhms on-resistance in standard SO-8 (vs VBA2311)
Design Notes
The IRF7424PBF is rated 2.5 W at ambient temperature in the SO-8 package. Estimated: at 10 A load the conduction loss is I^2 x RDS(on) = 10^2 x 13.5 mOhms = 1.35 W, consuming over half the budget; at 13 A it would exceed 2.28 W and approach the limit. Use the full SO-8 copper pour for the drain/source leads and consult the datasheet SO-8 thermal resistance for junction temperature estimates. For sustained currents above 10 A, consider paralleling two devices or a thermally enhanced package.
Gate drive sizing: total gate charge is 75 nC. Estimated: average gate-drive current at a given switching frequency is Qg x fsw, so at 50 kHz this is 3.75 mA and at 100 kHz 7.5 mA. Keep the switching frequency below 100 kHz per Infineon's application guidance for this planar HEXFET. Provide a gate-source resistor (10k-100k) to keep the P-channel off during controller startup, and ensure the gate-source voltage does not exceed the absolute maximum - clamp with a zener if the rail exceeds the VGS limit.
Do not derate the -30 V VDS lightly in industrial 24 V systems: inductive load dump transients can exceed 30 V on unclamped rails, avalanching the device. Use TVS clamping on automotive or inductive load environments. When second-sourcing to VBA2311 or other cross-brand SO-8 P-channel parts, verify the pinout (some vendors swap source/drain pin groups), RDS(on) specification test conditions, and gate threshold ranges - subtle differences in VGS(th) change gate-drive level-shift design.
Compliance Information
PBF suffix denotes lead-free (Pb-free) finish; product qualification according to JEDEC standard per digchip/IR datasheet summary. REACH and halogen-free status not stated in provided data.
