IRL2910STRRPBF vs IRL2910STRLPBF Comparison
Detailed side-by-side comparison of IRL2910STRRPBF by Infineon and IRL2910STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRL2910STRLPBF - 100V 55A Logic-Level N-Channel MOSFET | Infineon
IRL2910STRLPBF β ActiveSpecification Comparison
| Parameter | IRL2910STRRPBF | IRL2910STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.98 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | IR MOSFETβ’ (Planar HEXFET) | HEXFET (Infineon/IR) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 55 A | β |
| RDS(on) Max at VGS=10 V | 26 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | β |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 200 W | β |
| Configuration | Single with built-in body diode | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Terminal Finish | Matte Tin over Nickel | β |
| Lead-Free / RoHS Status | Yes (PBF suffix) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) @ TC=25C | β | 55 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10V | β | 26 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | Logic-level (1V-2V) |
| Total Gate Charge (Qg) | β | 93.3 nC |
| Power Dissipation @ TA=25C | β | 3.8 W |
| Power Dissipation @ TC=25C | β | 200 W |
| Operating Temperature Range | β | -55C to +175C (TJ) |
| RoHS Status | β | Compliant |
| Halogen Free | β | Compliant (per GlobalSpec) |