IRFR5410TRRPBF - P-CH 100V 13A HEXFET MOSFET | Infineon
MPN: IRFR5410TRRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 2,500 | $0.49 | $1,225.00 |
Drop-in alternatives for IRFR5410TRRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR5410TRPBF
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IRFR5410TRRPBF
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →AUIRFR5410
✅ Drop-In📋 Reference alternative (not in catalog)
IRFU5410PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR3711ZPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFR5410TRRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| FET Type | MOSFET (Metal Oxide Semiconductor) |
| Technology | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | -100 V |
| VGS (Gate-Source Voltage) | ±20 V |
| VGS(th) (Gate Threshold) | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | -13 A |
| RDS(on) max at VGS=-10V | 205 mΩ |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | 70 nC |
| Power Dissipation (Pd) at Tc=25C | 66 W |
| Operating Junction Temperature | -55C to +150C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) |
IRFR5410TRRPBF Pin Configuration
| Pin 1 | Gate (G) — Gate control input - drive to -10V relative to source for full enhancement |
| Pin 2 | Drain (D) — Drain connection, internally connected to metal tab/back thermal pad |
| Pin 3 | Source (S) — Source connection - connect to positive rail for high-side P-channel switching |
| Pin Tab | Drain (D) — Metal tab and back thermal pad - both electrically drain, must be soldered to PCB copper pour for cooling |
Safe Operating Area (SOA) - DC
Typical Applications
IRFR5410TRRPBF is suitable for 6 applications: High-Side Load Switch, DC-DC Converter Synchronous Rectifier / Switch, Battery Polarity / Reverse Protection, Automotive 12V/24V Load Control, Telecom -48V Hot-Swap Controller, Industrial Motor / Solenoid Driver.
High-Side Load Switch
The IRFR5410TRRPBF is well-suited for high-side load switching because its P-channel polarity allows the source to connect directly to the positive supply rail, with the load returned to ground. Driving the gate 10 V below the source rail fully enhances the device, achieving the rated 205 mΩ max on-resistance. The 70 nC total gate charge permits switching frequencies up to several hundred kHz without excessive driver losses, while the fully avalanche-rated construction protects against the inductive kickback of solenoids, relays, and motors. Use this part when you need to simplify the gate drive path and avoid the charge-pump circuitry required by N-channel high-side switches.
Recommended
DC-DC Converter Synchronous Rectifier / Switch
In buck and boost converters operating at -48 V input, the IRFR5410TRRPBF serves as a P-channel high-side switch or synchronous rectifier element. Its low 205 mΩ RDS(on) minimizes conduction losses, and the 70 nC gate charge keeps switching losses acceptable at 100-200 kHz operation. The DPAK package provides adequate thermal mass for continuous current up to several amps without forced air cooling. Compared to using an N-channel MOSFET with a bootstrap driver, the P-channel IRFR5410TRRPBF simplifies the control IC interface and reduces the BOM count for cost-sensitive industrial converter designs.
Recommended
Battery Polarity / Reverse Protection
The IRFR5410TRRPBF is ideal for battery reverse-polarity protection circuits where a P-channel MOSFET is placed in series with the positive rail. Under normal operation the gate is pulled to ground through a resistor, VGS becomes approximately equal to -VBAT (negative), and the MOSFET turns fully on with low loss. If the battery is reversed, VGS becomes positive and the device turns off within microseconds, protecting downstream circuitry. The -100 V VDS rating provides substantial margin above typical 12 V, 24 V, and 48 V battery systems, and the avalanche rating handles inrush transients from capacitive loads.
Recommended
Automotive 12V/24V Load Control
For automotive body electronics such as lamp drivers, seat controllers, and accessory switches, the IRFR5410TRRPBF (or its automotive-qualified AUIRFR5410 variant) provides a rugged P-channel high-side switch. The -100 V VDS rating exceeds the load-dump transients of 12V and 24V vehicle buses, while the fully avalanche-rated construction handles the back-EMF of inductive loads like solenoids and motors. The DPAK package withstands the under-hood thermal environment when properly heatsinked. AEC-Q101 qualification is available via the AUIRFR5410 drop-in part for designs requiring automotive certification.
Recommended
Telecom -48V Hot-Swap Controller
In telecom -48V distribution systems, the IRFR5410TRRPBF functions as the main pass element in a hot-swap or inrush-current-limiting circuit. The -100 V VDS rating provides 50% margin above the standard -48V rail, tolerating transient excursions during load steps. The 205 mΩ RDS(on) keeps steady-state conduction losses manageable at 5-10A continuous currents, and the avalanche rating handles the energy stored in the output bulk capacitors during a hot-plug event. The DPAK package is thermally compatible with industry-standard hot-swap controller layouts.
Recommended
Industrial Motor / Solenoid Driver
For driving DC motors, solenoids, and relays in industrial 24V and 48V systems, the IRFR5410TRRPBF provides reliable high-side switching with built-in avalanche ruggedness. The 66 W power dissipation rating and 150 °C maximum junction temperature support continuous operation in harsh factory environments when properly mounted on adequate copper area. The -100 V VDS easily handles the back-EMF spikes of 24V brush-type motors and 48V stepper coils. Designers should add a gate-source resistor (10-100 kΩ) to prevent unwanted turn-on from dv/dt coupling during fast switching transitions.
Recommended
Recommended Products Summary
Engineering reference data for IRFR5410TRRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR5410TRPBF | AUIRFR5410 | IRFU5410PBF | IRFR3711ZPBF |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK) - through-hole variant | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| VDS (Drain-Source Voltage) | -100 V | -100 V | -100 V | -100 V | +100 V |
| Continuous Drain Current (Tc=25C) | -13 A | -13 A | -13 A | -13 A | +93 A |
| RDS(on) max at VGS=10V | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ | 8.4 mΩ |
| Total Gate Charge (Qg) | 70 nC | 70 nC | 70 nC | 70 nC | 180 nC |
| Power Dissipation (Tc=25C) | 66 W | 66 W | 66 W | 66 W | 230 W |
| Automotive Qualified (AEC-Q101) | No (commercial grade) | No | Yes (AEC-Q101) | No | No |
| Mounting Style | Surface Mount | Surface Mount | Surface Mount | Through-Hole | Surface Mount |
Key Differentiators
- P-channel polarity simplifies high-side gate drive (vs IRFR3711ZPBF)
- Automotive qualified variant available (vs IRFR5410TRPBF)
- Through-hole drop-in option for legacy designs (vs IRFR5410TRPBF)
Design Notes
Estimated: at continuous drain current of -10A and RDS(on) of 0.205Ω, conduction loss is approximately P = I² × R = 10² × 0.205 = 20.5 W. With DPAK thermal resistance from junction to case (RthJC) of approximately 1.85 °C/W, the junction-to-case temperature rise is about 38 °C above the case temperature. The case-to-ambient thermal resistance (RthJA) for a minimal 1 square inch copper pad on FR-4 is around 50 °C/W, giving a junction temperature rise of 20.5 × 50 = 1025 °C - far exceeding the 150 °C limit. Designers must use a large copper pour, multiple thermal vias, or a heatsink to keep Tj within safe limits at high current. At -5A the conduction loss drops to 5.1W which is manageable on standard copper.
The DPAK package dissipates heat primarily through its metal tab and back thermal pad, which are both electrically connected to the drain. The PCB must include a copper pour of at least 1 square inch (645 mm²) on the drain tab footprint, with multiple thermal vias (typically 9-12 vias at 0.3mm drill) connecting to an inner-plane copper area for heat spreading. Without adequate thermal copper, the device will overheat and fail prematurely even at moderate currents. Keep high-current traces wide and short, and minimize loop area between the MOSFET, gate driver, and load to reduce inductance-induced ringing on the drain.
Common pitfalls when using the IRFR5410TRRPBF include: (1) Driving the gate to only -5V instead of -10V, which results in much higher RDS(on) and excessive heating; the part needs VGS of at least -10V for full enhancement. (2) Omitting a gate-source resistor (10-100 kΩ), which can cause dv/dt-induced turn-on during fast switching transitions. (3) Exceeding the ±20V VGS absolute maximum, which destroys the gate oxide - never let VGS exceed ±20V even transiently. (4) Using inadequate PCB copper area, leading to thermal runaway. (5) Forgetting the body diode reverse recovery when used in synchronous rectification at high frequencies.
Optimal PCB layout for the IRFR5410TRRPBF requires keeping the gate drive loop area to absolute minimum - place the gate driver IC within 5mm of the gate pin with a wide ground return path. Keep the power loop (drain-source-load) area small to minimize parasitic inductance which causes voltage overshoot during switching. Use a star-ground topology where the source sense returns directly to the driver ground rather than sharing the power ground path. For high-frequency switching above 100 kHz, consider adding a small RC snubber (10Ω + 1nF) across drain-source to dampen ringing. Place input bulk capacitors close to the drain tab.
Compliance Information
PBF suffix confirms Pb-free / RoHS compliance per Infineon datasheet. Commercial grade - not AEC-Q qualified; choose AUIRFR5410 for automotive. Halogen-free status not explicitly confirmed in available data.
