IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon
MPN: IR2127STRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.55 | $15.50 |
| 100 | $1.22 | $122.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.81 | $810.00 |
| 2,500 | $0.71 | $1,775.00 |
Drop-in alternatives for IR2127STRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IR21271STRPBF
✅ Drop-In✓ In Stock
$1.82 / Unit
View Datasheet →IR2127SPBF
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IR2127S
✅ Drop-In📋 Reference alternative (not in catalog)
IR21271SPBF
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IRS2008STRPBF
✅ Drop-In✓ In Stock
$0.334 / Unit
View Datasheet →IRS2109STRPBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IR2127STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High-Side |
| Supply Voltage Range | 12 V to 20 V |
| Output Voltage (Offset) | up to 600 V |
| Peak Source Current | 250 mA |
| Peak Sink Current | 500 mA |
| Propagation Delay | 200 ns (typical) |
| Input Logic | Non-Inverting |
| Number of Outputs | 1 |
| Rise Time | 80 ns (typical) |
| Fall Time | 60 ns (typical) |
| Operating Temperature Range | -40C to +125C |
| Package | 8-SOIC (3.90 mm body) |
| Mounting Type | Surface Mount |
| MSL Level | MSL3 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | Pb-free (PBF), RoHS compliant |
| dV/dt Immunity | Yes (high-side floating channel) |
| Integrated Current Sense | Yes (cycle-by-cycle comparator) |
IR2127STRPBF Pin Configuration
| Pin 1 | VCC — +12 V to +20 V supply for gate-drive logic and low-side circuitry |
| Pin 2 | IN — Non-inverting logic-level PWM input referenced to GND |
| Pin 3 | GND — Logic ground and low-side return for VCC |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | VS — High-side floating well return; connects to source/emitter of high-side switch |
| Pin 6 | VB — Bootstrap supply for the high-side floating driver (referenced to VS) |
| Pin 7 | CS — Current-sense comparator input for cycle-by-cycle over-current protection |
| Pin 8 | OUT — Gate-drive output to the gate of the high-side IGBT or MOSFET |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2127STRPBF is suitable for 7 applications: Three-Phase Industrial Motor Drive, Switch-Mode Power Supply (SMPS) Half-Bridge, Solenoid and Injector Driver, Class-D Audio Amplifier Output Stage, Photovoltaic / Solar Inverter High-Side Switch, Industrial Automation High-Side Load Switch, Battery Management System High-Side Disconnect.
Three-Phase Industrial Motor Drive
The IR2127STRPBF is well suited to the high-side switch leg of 400 V to 480 V three-phase industrial motor drives where IGBTs or 600 V MOSFETs must be switched from a 3.3 V or 5 V MCU PWM signal. With 600 V continuous high-side offset tolerance, 250 mA source / 500 mA sink gate-drive capability, and 200 ns typical propagation delay, it cleanly drives modules such as the Infineon IGBTs in the IRGB/SG series. The integrated current-sense comparator enables per-phase cycle-by-cycle over-current protection, eliminating an external op-amp per phase. Place the bootstrap diode and capacitor on the Vb-Vs rail close to the chip, and size the bootstrap capacitor for the worst-case IGBT gate charge. Compared with discrete gate-drive optocouplers, the IR2127STRPBF cuts BOM count and improves dV/dt immunity in harsh industrial environments.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge
In a half-bridge SMPS topology such as a 400 V input LLC or phase-shift full-bridge converter, the IR2127STRPBF drives the high-side primary MOSFET from a low-voltage PWM controller referenced to logic ground. Its 600 V floating-well rating covers 380 V to 400 V rectified bus voltages with margin, and its 250/500 mA source/sink current drives typical 600 V MOSFETs at switching frequencies up to several hundred kHz without external buffers. The 80 ns / 60 ns rise/fall times limit switching losses, while the dV/dt immunity prevents false triggering from the high-voltage dv/dt transitions of the half-bridge node. The integrated current-sense comparator simplifies primary-side current-mode control and primary over-current protection.
Recommended
Solenoid and Injector Driver
The IR2127STRPBF is a strong fit for high-side solenoid and injector drivers in automotive and industrial actuator systems, where the load is connected to a high-voltage rail and must be switched from a low-voltage MCU. Its 600 V tolerance handles inductive flyback transients that exceed the supply rail, while 500 mA sink current safely commutates inductive loads and protects the device during turn-off. The integrated current-sense comparator enables peak-and-hold current control of the solenoid without an external op-amp, simplifying the analog front end. The 12 V to 20 V VCC range matches the typical 12 V automotive battery rail. Designers should add a free-wheel diode across the solenoid and use a TVS to clamp the inductive spike below the 600 V rating.
Recommended
Class-D Audio Amplifier Output Stage
In a half-bridge or full-bridge Class-D audio amplifier, the IR2127STRPBF drives the high-side MOSFET of the output modulation stage from a low-voltage PWM modulator. Its 250/500 mA source/sink gate-drive capability and 200 ns propagation delay ensure fast switching with low distortion, while the 600 V floating-well rating covers bus voltages up to +400 V in high-power professional audio amplifiers. The integrated current-sense comparator can be used for speaker over-current protection, eliminating an external sense amplifier. For lower-power consumer Class-D applications (e.g. 24 V bus), the IRS2008STRPBF from the same family provides a similar drop-in solution at lower voltage.
Recommended
Photovoltaic / Solar Inverter High-Side Switch
The IR2127STRPBF drives the high-side switching transistor in DC-DC stages of photovoltaic (solar) micro-inverters and string inverters where the DC bus reaches 400 V to 600 V. Its 600 V floating-well rating and dV/dt immunity enable reliable switching under the harsh noise conditions present in solar installations. The integrated current-sense comparator allows cycle-by-cycle current limiting required by solar inverter safety standards. The wide operating temperature range (-40C to +125C) supports outdoor inverter enclosures without derating. The Pb-free matte-tin finish and RoHS compliance satisfy global solar inverter environmental requirements.
Recommended
Industrial Automation High-Side Load Switch
In 24 V to 48 V industrial automation systems, the IR2127STRPBF provides an isolated high-side switch interface between a PLC digital output and a higher-voltage actuator or sensor power rail up to 600 V. The non-inverting logic input accepts 3.3 V or 5 V PLC logic levels directly, while the floating gate-drive output can pull up to 600 V referenced to the high-side rail. This level-shift function is essential for actuator drivers in factory automation, robotics, and process control. The integrated current-sense comparator supports per-channel over-current protection and fault reporting back to the PLC. Compared with electromechanical relays, the IR2127STRPBF switches millions of cycles without wear and is far smaller.
Recommended
Battery Management System High-Side Disconnect
In battery management systems (BMS) for electric vehicles, e-bikes, and stationary energy storage, the IR2127STRPBF can drive the high-side disconnect MOSFET that isolates the battery pack from the load during fault conditions. Its 600 V tolerance supports 400 V and 800 V EV battery systems when driving stacked MOSFETs, while the integrated current-sense comparator enables instantaneous over-current detection. The 12 V to 20 V VCC range aligns with the auxiliary 12 V battery commonly used in EVs. Designers should add gate-resistance to control dV/dt and prevent parasitic turn-on in the half-bridge node.
Recommended
Recommended Products Summary
Engineering reference data for IR2127STRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR21271STRPBF | IR2127SPBF | IR2127S | IR21271SPBF | IRS2008STRPBF | IRS2109STRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (3.90 mm) | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Maximum High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 200 V | 600 V |
| Peak Source Current | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 290 mA | 120 mA |
| Peak Sink Current | 500 mA | 500 mA | 500 mA | 500 mA | 500 mA | 600 mA | 270 mA |
| Integrated Current Sense | Yes | Yes | Yes | Yes | Yes | No | No (half-bridge topology) |
| Configuration | Single high-side | Single high-side | Single high-side | Single high-side | Single high-side | Single high-side | Half-bridge (HS + LS) |
| Supply Voltage Range | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| RoHS / Lead-Free | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Non-Pb (legacy, may be non-RoHS) | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS |
| Unit Price @ 1000 pcs (USD) | $0.81 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Integrated cycle-by-cycle current-sense comparator (vs IRS2008STRPBF)
- 600 V continuous high-side offset rating (vs IRS2008STRPBF)
- Single-channel high-side only vs half-bridge topology (vs IRS2109STRPBF)
Design Notes
Bootstrap capacitor sizing for the IR2127STRPBF: the Vb-Vs rail supplies the high-side gate-drive circuitry and must be recharged each switching cycle through a bootstrap diode from VCC. The minimum bootstrap capacitance is given by Cboot >= Qg / delta_Vb, where Qg is the gate charge of the driven IGBT/MOSFET and delta_Vb is the allowed droop on Vb-Vs (typically 1 V). For a 100 nC gate charge and 1 V droop, Cboot >= 100 nF; in practice use 1 uF to 10 uF ceramic for safety margin. Estimated: this calculation uses Qg = 100 nC and delta_Vb = 1 V as inputs. Place the bootstrap diode (e.g. UF4007 or a fast-recovery diode) and the capacitor as close to the Vb and Vs pins as possible.
PCB layout for the IR2127STRPBF: keep the high-side gate-drive loop (Vb-Vs-OUT-gate) as small as possible to minimize parasitic inductance that causes gate-oscillation and overshoot. Use a ground plane tied to logic GND, and separate the high-current switching return path from the logic-ground return of the chip. Add a 100 nF ceramic bypass capacitor directly on VCC (pin 1) to GND (pin 3), placed within 3 mm of the pins, plus a 1 uF to 10 uF bulk capacitor on the VCC rail. For dV/dt-critical designs, add a 10 kohm to 100 kohm gate-source resistor on the driven MOSFET to damp parasitic turn-on.
Common pitfalls when using the IR2127STRPBF: (1) Exceeding the 600 V continuous offset rating during transient events - add a TVS or Zener clamp across Vb-Vs rated below the avalanche breakdown of the floating well. (2) Forgetting the high-side ground (VS) reference - VS swings with the source of the high-side switch, so any external circuitry tied to VS must tolerate the full switching waveform. (3) Driving the IR2127 from a 3.3 V MCU without checking the input-threshold specification - the IR2127 is TTL-level CMOS-compatible, but verify the VIH/VIL against your MCU's GPIO voltage. (4) Using too small a bootstrap capacitor - this causes the high-side gate-drive voltage to droop and the high-side MOSFET to operate in the linear region, dissipating excessive power.
Compliance Information
RoHS compliant per Infineon product page. Pb-free (PBF) matte-tin finish. Not AEC-Q100 qualified; for automotive designs requiring AEC-Q100 consider IR21271STRPBF or visit the Infineon automotive gate-driver portfolio.
