IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
MPN: IRS2008STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.73 | $0.73 |
| 10 | $0.525 | $5.25 |
| 100 | $0.415 | $41.50 |
| 500 | $0.371 | $185.50 |
| 1,000 | $0.358 | $358.00 |
| 2,500 | $0.343 | $857.50 |
| 5,000 | $0.334 | $1,670.00 |
Drop-in alternatives for IRS2008STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2008SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2003STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2005STRPBF
β Drop-Inβ In Stock
$0.18 / Unit
View Datasheet βIRS2011STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2104STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2008STRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRS2008STRPBF |
| Function | Half-Bridge Gate Driver |
| Driven Configuration | Half-Bridge (High-Side + Low-Side, synchronous) |
| Channel Type | Synchronous (independent inputs) |
| Number of Outputs | 2 (high-side + low-side) |
| Output Type | Non-Inverting |
| Logic Input Compatibility | TTL/CMOS |
| Input Voltage (VCC) | 10 V to 20 V (per datasheet family) |
| Maximum Offset Voltage (Voffset) | 200 V |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.6 A |
| VCC UVLO Threshold | Yes (per datasheet family) |
| VBS UVLO Threshold | Yes (per datasheet family) |
| Shutdown Pin (SD) | Yes (active logic-level shutdown) |
| Operating Temperature | -40 C to +125 C (industrial) |
| Package | 8-SOIC (SOIC N), 3.90 mm body width |
| Mounting Type | Surface Mount (Tape & Reel) |
| Lead Finish | Matte Tin (lead-free) |
| RoHS Status | Compliant |
IRS2008STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply voltage (10 V - 20 V) |
| Pin 2 | HIN β Logic input for high-side output (HO), non-inverting |
| Pin 3 | LIN β Logic input for low-side output (LO), non-inverting |
| Pin 4 | SD β Shutdown - logic high latches both HO and LO low |
| Pin 5 | COM β Low-side return / power ground |
| Pin 6 | LO β Low-side gate drive output |
| Pin 7 | VS β High-side floating supply return (switch node) |
| Pin 8 | HO β High-side gate drive output |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS2008STRPBF is suitable for 6 applications: Low-Voltage Motor Drive (H-Bridge / 3-Phase), Half-Bridge / Synchronous Buck DC-DC Converter, Class D Audio Amplifier Output Stage, Solar Microinverter / Power Optimizer Switching Stage, Telecom 48 V Hot-Swap / ORing Controller Switch, Industrial Half-Bridge Welding / Plasma Inverter.
Low-Voltage Motor Drive (H-Bridge / 3-Phase)
The IRS2008STRPBF drives the low-side and high-side N-channel MOSFETs in the half-bridge legs of a sub-200 V brushless DC (BLDC) or permanent-magnet synchronous motor (PMSM) inverter. With a 200 V V_offset rating and 0.6 A sink current, it cleanly switches 40 V / 60 V / 100 V bus rails typically used in appliance motors, e-bike controllers and small industrial pumps. The integrated VCC and VBS UVLO prevents the driven MOSFETs from entering their linear region during low-bus start-up, where simultaneous conduction would otherwise create destructive shoot-through currents. The shutdown (SD) pin accepts a 3.3 V or 5 V logic signal from an external MCU or comparator, allowing the system controller to latch both gate outputs low during over-current or over-temperature events within microseconds.
Recommended
Half-Bridge / Synchronous Buck DC-DC Converter
The IRS2008STRPBF drives the control (low-side) and synchronous rectifier (high-side) MOSFETs of a non-isolated half-bridge or synchronous buck converter operating at bus voltages up to 200 V. The 0.29 A source / 0.6 A sink drive strengths bias MOSFET gate charge (Qg) quickly enough for switching frequencies in the 50-200 kHz range, while the VBS UVLO guarantees the high-side N-channel MOSFET is not gated into its Miller plateau before VBS has charged above the UVLO enable threshold. Bootstrap capacitor selection is straightforward - use a 0.1 uF to 1 uF ceramic rated above the bus voltage and place it close to the BST and PH pins. Combined with a current-mode controller, the IRS2008STRPBF simplifies the gate-drive network compared to discrete bootstrap solutions.
Recommended
Class D Audio Amplifier Output Stage
In a 50 W to 200 W Class D audio amplifier, the IRS2008STRPBF drives the totem-pole half-bridge stages of the output LC filter, switching bus rails of +/- 35 V to +/- 100 V at audio-band PWM frequencies. The 200 V V_offset rating supports amplifier bus voltages that can reach +/- 100 V peak during reactive loads, while the matched propagation delay between the HIN and LIN channels preserves the audio dead-time and reduces THD. The shutdown pin is ideal for the amplifier's DC-protection or click-and-pop muting circuitry. Compared to a transformer-coupled gate driver, the IRS2008STRPBF removes the audio-band transformer from the BOM and lowers total harmonic distortion by avoiding transformer magnetising-current non-linearity.
Recommended
Solar Microinverter / Power Optimizer Switching Stage
The IRS2008STRPBF drives the primary-side half-bridge of a sub-200 V photovoltaic microinverter or panel-level power optimizer, switching 30 V to 100 V string-derived rails at tens of kilohertz. The 200 V V_offset headroom tolerates the reflected voltage transients on the LLC or flyback primary, while the 0.6 A sink current provides fast turn-off to minimise switching losses during MPPT-tracking PWM events. The integrated VCC and VBS UVLO prevents start-up misfiring when the panel output is below the converter's minimum operating voltage, which is critical for safety compliance under partial-shade conditions. The shutdown pin accepts a logic-level fault signal from the MPPT controller, providing a deterministic shutdown path that does not depend on firmware state.
Recommended
Telecom 48 V Hot-Swap / ORing Controller Switch
The IRS2008STRPBF drives a back-to-back N-channel MOSFET pair that performs the inrush-limiting and reverse-current blocking function in a 48 V telecom rectifier or ORing-redundancy stage. With a 200 V V_offset, the driver tolerates transients above the nominal 48 V rail (e.g. 100 V load-dump) and the 0.6 A sink current gives clean turn-off to support ORing comparator response times below 5 us. The shutdown pin is wired to the ORing comparator so that reverse-current detection immediately disables the gate driver, isolating the faulted supply rail. Compared to a P-channel ORing MOSFET, the back-to-back N-channel design halves the conduction loss per amp of load current.
Recommended
Industrial Half-Bridge Welding / Plasma Inverter
The IRS2008STRPBF drives the IGBT or MOSFET half-bridge stage of a low-power (<5 kW) welding inverter, plasma cutter or induction-heating resonant converter. The 200 V V_offset rating suits compact welding inverters operating from 120 V / 230 V AC-rectified rails, and the 0.6 A sink current provides fast IGBT turn-off to control switching losses at 20-50 kHz. VCC and VBS UVLO prevent the IGBTs from being driven into partial conduction during the inrush-charge of the DC bus capacitor bank, which is essential for safe hot-restart behaviour after a fault trip. The shutdown pin interfaces to a hardware protection comparator that trips on over-current, over-temperature or gas-flow loss, disabling the gate driver within nanoseconds.
Recommended
Recommended Products Summary
Engineering reference data for IRS2008STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2008SPBF | IRS2003STRPBF | IRS2005STRPBF | IRS2011STRPBF | IR2104STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (SOIC N) 3.90 mm | 8-SOIC (SOIC N) - same | 8-SOIC (SOIC N) - same | 8-SOIC (SOIC N) - same | 8-SOIC (SOIC N) - same | 8-SOIC (SOIC N) - same |
| Maximum Offset Voltage | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Source Current (typ.) | 0.29 A | 0.29 A | 0.10 A | 0.50 A | 0.29 A | 0.12 A |
| Sink Current (typ.) | 0.6 A | 0.6 A | 0.4 A | 0.5 A | 0.6 A | 0.25 A |
| VCC / VBS UVLO | Yes (both rails) | Yes (both rails) | Yes (both rails) | Yes (both rails) | Yes (both rails) | Yes (VCC + VBS) |
| Shutdown Pin (SD) | Yes (active logic-level) | Yes | No (shutdown absent) | Yes | Independent enable logic | No (shutdown absent) |
| Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Independent high/low side | Half-Bridge |
| Lead-Free / RoHS | Yes (Pb-free matte-Tin) | Yes | Yes | Yes | Yes | Yes |
| 1-pc Price (USD, as of 2026-09-13) | $0.73 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Integrated shutdown (SD) pin for hardware fault disable (vs IRS2003STRPBF)
- Higher sink current for hard turn-off of larger MOSFETs (vs IRS2003STRPBF)
- Tighter matched propagation delay between HO and LO outputs (vs IRS2011STRPBF)
Design Notes
Place the bootstrap diode and 0.1 uF-1 uF bootstrap capacitor as close as possible to the BST (VBS) and PH (VS) pins of the IRS2008STRPBF. Keep the gate-drive loop area (HO/LO to MOSFET gate-source) below 0.5 cm^2 to minimise ringing that can exceed the driven MOSFET VGS(max) of typically +/-20 V. Use a 4-layer PCB with a continuous uninterrupted ground plane on layer 2 directly under the driver to provide a low-impedance return for the high di/dt gate-charge currents, and route the HIN/LIN logic traces away from the HO/LO outputs to avoid capacitive coupling back into the input stage.
Estimated: total gate-drive power dissipation for the IRS2008STRPBF in a typical 100 kHz half-bridge switching 2x 50 nC Qg MOSFETs is P = 2 * VCC * Qg * fsw = 2 * 15 V * 50 nC * 100 kHz = 0.15 W per driven MOSFET. Across two MOSFETs and the internal VBS bootstrap recharge current, allow at least 0.5 W of package dissipation in the SOIC-8 footprint. Without a copper-pour heat-spreader the SOIC-8 thermal resistance (~150 C/W) limits operation above 0.5 W without exceeding Tj(max) - add at least 100 mm^2 of 2 oz copper pour tied to the COM pin.
Do not exceed the IRS2008STRPBF V_offset maximum of 200 V, including voltage transients on the VS (switch node) pin during MOSFET turn-off. Always add a snubber (RC or RCD) across the half-bridge leg if the bus voltage exceeds 150 V to limit dV/dt-induced VS ringing. The shutdown (SD) pin must be driven by a clean logic signal - a floating SD pin is undefined and can latch the outputs in an undesired state; tie SD to COM through a 100 kohm pull-down if unused, never leave it floating.
Keep the high-side floating supply return (VS) trace short and direct to the switch-node copper pour - any stray inductance in this path subtracts from the VBS bootstrap voltage and can drop the high-side gate drive below the MOSFET Vgs(th) during the on-time. Use a 4-layer stack-up with VS on the top layer as a flooded polygon, layer 2 as continuous ground, layer 3 as VCC/VBS power, layer 4 as the gate-driver signal routing. This stack-up minimises loop area for the high di/dt gate-charge and bootstrap recharge currents, which is the single biggest factor in clean IRS2008STRPBF waveforms.
Compliance Information
Pb-free matte-Tin finish per Infineon product page. AEC-Q100 qualification not stated for this part - use automotive-grade IRS2005 family or AEC-Q100-qualified gate drivers for vehicle applications. REACH compliance inferred from RoHS compliance; halogen-free status not explicitly stated in the verified data.
