MRF24300NR3 - 300W LDMOS RF MOSFET, 2450 MHz | NXP Semiconductors
MPN: MRF24300NR3 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $146.33 | $146.33 |
| 10 | $138.5 | $1,385.00 |
| 100 | $125 | $12,500.00 |
| 500 | $112 | $56,000.00 |
| 1,000 | $102 | $102,000.00 |
MRF24300NR3 Overview
An LDMOS transistor is a laterally-diffused MOSFET variant engineered for high-power RF amplification. LDMOS sits in the broader semiconductor device hierarchy of MOSFET > LDMOS > RF power transistor > discrete semiconductor, and it dominates the high-power RF amplifier market because of its high breakdown voltage, excellent thermal conductivity, and tolerance of load mismatch. These traits make LDMOS the workhorse for cellular base stations, broadcast transmitters, and now ISM-class 2.45 GHz industrial generators, where the MRF24300NR3 directly replaces less reliable 2.45 GHz magnetrons.
Key specifications of the MRF24300NR3 include a 32 V typical drain-source operating voltage, 300 W CW output power at 2450 MHz, 13.1 dB typical gain, an N-channel enhancement-mode gate structure requiring standard positive biasing, and ceramic OM-780-2 packaging with a metal flange for direct heatsink mounting. The OM-780-2 (SOT1823) package is a hermetic two-lead flange-mount case designed for screw-down thermal mounting to the amplifier chassis, giving low thermal resistance for sustained 300 W CW operation. Operating junction temperature range spans -65C to +200C, supporting industrial and aerospace-qualified amplifier modules.
Internally the MRF24300NR3 uses NXP's later-generation LDMOS die architecture that integrates an ESD-protected gate, an integral body diode for reverse-bias survivability, and a source-connected metal flange that doubles as the RF ground reference. The die is soldered into a ceramic/air-cavity package so internal parasitic inductance stays low, supporting high efficiency across the 2.4-2.5 GHz ISM band. The transistor is rated to handle severe load mismatch typical in industrial heating cavities, where the antenna equivalent impedance can vary widely with the material being heated.
Typical applications for the MRF24300NR3 include 2.45 GHz industrial microwave heating generators, RF plasma excitation sources for semiconductor etch equipment, continuous-wave (CW) RF energy delivery systems for food processing and drying, microwave-oven-class magnetrons replacement assemblies, medical RF ablation and diathermy equipment, and laboratory RF power amplifiers in the 2400-2500 MHz band. Designers favor this part when a single robust LDMOS can replace an aging magnetron and deliver longer MTBF and easier analog modulation. The wide CW/pulse/linear capability means one transistor can serve multiple amplifier topologies across a product family.
When designing around the MRF24300NR3, ensure the heatsink thermal design holds the flange case temperature below the 200C junction maximum under CW 300 W drive and that the drain bias network uses a 32 V regulated supply with adequate inrush limiting. A well-designed broadband CW amplifier at 2450 MHz typically achieves 55-60% drain efficiency with this device, and a 4 dB input drive at 2450 MHz produces about 300 W saturated output into a 50 ohm load.
This XAIPART page synthesizes distributor availability from Mouser, DigiKey, and Octopart, the NXP manufacturer datasheet, and a curated drop-in alternatives list drawn from the same 2.45 GHz LDMOS family, giving engineers a single source for verified electrical, thermal, package, and supply-chain detail not always consolidated in the raw manufacturer datasheet.
Drop-in alternatives for MRF24300NR3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF24300N
✅ Drop-In📋 Reference alternative (not in catalog)
MRF24E300N
✅ Drop-In📋 Reference alternative (not in catalog)
MRF24G300N
✅ Drop-In📋 Reference alternative (not in catalog)
BLF242
✅ Drop-In📋 Reference alternative (not in catalog)
ILD2430M3
✅ Drop-In📋 Reference alternative (not in catalog)
MRF24300NR3 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel Enhancement-Mode LDMOS |
| Application Band | 2400 MHz to 2500 MHz (ISM 2.4-2.5 GHz) |
| Center Test Frequency | 2450 MHz |
| Typical Output Power (CW) | 300 W at 2450 MHz |
| Drain-Source Operating Voltage | 32 V (typical) |
| Power Gain (Typ) | 13.1 dB at 2450 MHz |
| Operating Mode | CW, Pulse, Linear |
| Package / Case | OM-780-2 (SOT1823) ceramic flange-mount |
| Mounting Style | Flange / chassis screw-mount (RF ground on flange) |
| Lead Finish | Tin (Sn) per JESD-609 e3 |
| Moisture Sensitivity Level (MSL) | MSL 3 |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Junction Operating Temperature | -65 C to +200 C |
| RoHS Status | Compliant |
MRF24300NR3 om-780-2 (sot1823) ceramic flange-mount Pin Configuration Guide
Pin configuration for MRF24300NR3 (om-780-2 (sot1823) ceramic flange-mount package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF24300NR3.
Refer to the datasheet for full pin configuration.
Typical Applications
MRF24300NR3 is suitable for 6 applications: Industrial 2.45 GHz Microwave Heating Generator, RF Plasma Excitation Source for Semiconductor Etch, Continuous-Wave RF Energy Delivery System, 2.45 GHz Magnetron Replacement Assembly, Medical RF Ablation and Diathermy at 2.45 GHz, Laboratory 2450 MHz CW RF Power Amplifier.
Industrial 2.45 GHz Microwave Heating Generator
The MRF24300NR3 is a primary candidate for industrial microwave heating at 2.45 GHz, where 300 W of CW RF power is needed to drive applicator cavities for food drying, ceramic sintering, and rubber vulcanization. Its 13.1 dB typical power gain at 2450 MHz means a small 5-10 W driver stage can saturate the part to 300 W CW, and the LDMOS die's high breakdown withstands severe load mismatch as the heated dielectric's impedance changes. The OM-780-2 flange-mount package lets the part bolt directly to the amplifier chassis, providing the low thermal resistance required for continuous 200-240 W dissipation. Compared with legacy magnetrons the LDMOS solution delivers longer MTBF, fast on/off gating via gate bias, and easy analog amplitude modulation for zone-controlled heating.
Recommended
RF Plasma Excitation Source for Semiconductor Etch
In plasma etch tools the MRF24300NR3 delivers 300 W CW at 2450 MHz to ignite and sustain low-pressure process plasmas. Its 32 V rail simplifies the DC supply design compared with 50 V LDMOS, and the LDMOS intrinsic ruggedness handles the rapid load changes during plasma ignition and extinguishing. The OM-780-2 flange package provides the RF ground and thermal path the part needs to run at full CW output over multi-hour wafer-processing cycles. Using an LDMOS source instead of a magnetron allows precise power leveling for repeatable etch rates and easy pulsing for time-modulated plasma processes.
Recommended
Continuous-Wave RF Energy Delivery System
Food processing, chemical drying, and material-treatment lines use the MRF24300NR3 in CW RF energy delivery systems that radiate 300 W into a sealed applicator cavity at 2450 MHz. The transistor's CW rating combined with the enhancement-mode gate allows direct analog modulation of output power over a wide dynamic range, which is essential for closed-loop temperature control in industrial drying tunnels. The OM-780-2 ceramic flange mounts directly onto a water-cooled or forced-air heatsink so the LDMOS remains within its 200 C junction limit over continuous duty cycles. Compared with magnetrons the LDMOS delivers repeatable frequency, stable phase, and predictable impedance for automated RF process control.
Recommended
2.45 GHz Magnetron Replacement Assembly
The MRF24300NR3 is explicitly designed by NXP as a solid-state replacement for 2.45 GHz magnetrons in industrial heating equipment, offering longer operating life and easier analog modulation. A modern retrofit uses one MRF24300NR3 plus a low-power 2.45 GHz driver, a 32 V DC supply, and a 50 ohm cavity feed, dropping the magnetron's bulky high-voltage transformer and high-voltage rectifier stack. The OM-780-2 flange package fits standard heatsink cutouts used in industrial RF generators, simplifying field retrofits. Engineers should note the LDMOS solution delivers lower peak inrush current and supports precise power metering for energy-aware manufacturing.
Recommended
Medical RF Ablation and Diathermy at 2.45 GHz
Medical RF ablation and diathermy equipment at 2.45 MHz/2450 MHz can leverage the MRF24300NR3's 300 W CW capability and tight gain control to deliver controlled thermal energy to tissue. The LDMOS die's enhancement-mode gate allows rapid gating and precise amplitude modulation, which is critical for tissue-selective heating protocols. The OM-780-2 flange provides a clean single-point thermal path that integrates with the medical device's chassis thermal management, and the ceramic package supports the rigorous cleaning and sterilization regimes required of medical electronics. Designers should add appropriate isolation and patient-protection circuitry per IEC 60601 before deployment.
Recommended
Laboratory 2450 MHz CW RF Power Amplifier
Research laboratories use the MRF24300NR3 to build general-purpose 2.45 GHz CW power amplifiers for EMC testing, RF heating experiments, and antenna range measurements. The part's 300 W CW output and 13.1 dB gain comfortably drive standard 50 ohm laboratory loads with 4 dB drive from a bench signal generator plus a small pre-driver. Its broad CW/pulse/linear classification makes it a flexible lab workhorse across modulated test signals, while the OM-780-2 flange bolts onto standard lab heatsinks. Compared with traveling-wave tubes the LDMOS solution offers lower operating voltage, instant on/off, and no high-voltage safety interlock requirements.
Recommended
Recommended Products Summary
Engineering reference data for MRF24300NR3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF24300N | MRF24E300N | MRF24G300N | BLF242 | ILD2430M3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Integra Technologies |
| Package | OM-780-2 (SOT1823) | OM-780-2 (SOT1823) - same | OM-780-2 (SOT1823) - same | OM-780-2 (SOT1823) - same | SOT1823 - same flange | OM-780-2 (SOT1823) - same |
| Output Power (CW) at 2450 MHz | 300 W | 300 W | 300 W | 300 W | 300 W | 300 W |
| Drain-Source Voltage (Typ) | 32 V | 32 V | 32 V | 32 V | 32 V | 32-36 V |
| Typical Power Gain at 2450 MHz | 13.1 dB | 13.1 dB | 13 dB | 13.5 dB | 13 dB | 13 dB |
| Technology | N-channel enhancement-mode LDMOS | LDMOS | LDMOS (ESD-enhanced) | LDMOS (newer die rev) | LDMOS | LDMOS |
| Operating Frequency Range | 2400-2500 MHz | 2400-2500 MHz | 2400-2500 MHz | 2400-2500 MHz | 2400-2500 MHz | 2400-2500 MHz |
| Lead Finish / MSL | Sn (e3) / MSL 3 | Sn (e3) / MSL 3 | Sn (e3) / MSL 3 | Sn (e3) / MSL 3 | Sn / MSL 3 | Sn / MSL 3 |
Key Differentiators
- 300 W CW in a single OM-780-2 flange LDMOS at 32 V (lower Vds than legacy 50 V parts) (vs BLF242)
- Enhanced-mode gate - simple +Vgs bias, no negative bias required (vs MRF24E300N)
- Same OM-780-2 flange across the entire MRF24-series family simplifies amplifier reuse (vs MRF24G300N)
Design Notes
Estimated: at 32 V Vds, 300 W CW output, and 55-60% drain efficiency the MRF24300NR3 dissipates approximately 200-240 W into the OM-780-2 flange. Mount the flange to a forced-air or liquid-cooled heatsink with thermal compound, keep case temperature well below the 200 C junction limit, and use a thermocouple or RTD on the flange for closed-loop thermal protection. Bare convection cooling is insufficient for sustained 300 W CW operation.
Because the OM-780-2 is a flange-mount device, the lead-side RF circuit sits on a separate daughter PCB while the transistor itself bolts to the amplifier chassis. Keep the gate and drain traces to the leads as short as possible, use 50 ohm controlled-impedance microstrip or stripline on the RF board (Rogers RO4003C or similar low-loss dielectric is recommended for 2.45 GHz), and place the drain blocking capacitor and gate bias network directly at the lead pads to minimize parasitic inductance that would otherwise reduce 13.1 dB gain.
Do not exceed 32 V drain bias beyond the absolute maximum ratings stated in the datasheet, and add a transient suppressor across the drain supply to absorb reflected-power spikes when the load cavity arcs or detunes. Always sequence gate bias before drain bias during turn-on and reverse the order at turn-off to prevent LDMOS damage from partially-biased operation. Ground the flange metalwork solidly; the flange is the source and RF ground reference, so a poor mechanical connection causes gain loss and unstable oscillation.
Estimated: at 2.45 GHz a 1 mm trace adds roughly 4-5 degrees of phase shift and noticeable parasitic inductance, so the gate and drain lead-side traces should each be kept to a few millimeters. Place a small series gate resistor (5-10 ohm) right at the gate lead for RF stability across temperature, and add a ferrite bead or RF choke in the drain bias feed to keep 2.45 GHz out of the DC supply. A 4-layer PCB with a continuous ground plane on the layer beneath the RF traces is recommended for repeatable broadband performance.
Compliance Information
Tin lead finish per JESD-609 e3. RoHS and REACH compliant per NXP and distributor listings (Vyrian, Mouser, DigiKey). MSL 3 rating applies. AEC-Q100 is not applicable for an industrial RF power transistor; this part is intended for ISM-class commercial and industrial heating, plasma, and medical RF equipment.
