MT41K256M16TG-125 - 4Gb DDR3L SDRAM 800MHz | Micron
MPN: MT41K256M16TG-125 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.5 | $4,250.00 |
| 1,000 | $7.2 | $7,200.00 |
Drop-in alternatives for MT41K256M16TG-125 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT41K256M16RE-125
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16TW-125:P
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125XIT:E
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16V80AWC1
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BYMA
β Drop-Inβ 99,999 In Stock
$11.5 / Unit
View Datasheet βMT41K256M16TG-125 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x 16 |
| Supply Voltage | 1.35 V |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| Interface | Parallel |
| Package | 96-FBGA (8x14) |
| Mounting Type | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] |
| Data Rate | 1600 MT/s |
| CAS Latency | [DATA_NEEDED: CAS latency] |
| RoHS Status | Compliant |
| Lead Free | Yes |
| Number of Pins | 96 |
MT41K256M16TG-125 Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output |
| Pin A3 | DQ1 β Data input/output |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output |
| Pin B3 | DQ3 β Data input/output |
| Pin C1 | VDDQ β I/O power supply |
| Pin C2 | DQ4 β Data input/output |
| Pin C3 | DQ5 β Data input/output |
| Pin D1 | VSSQ β I/O ground |
| Pin D2 | DQ6 β Data input/output |
| Pin D3 | DQ7 β Data input/output |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT41K256M16TG-125 is suitable for 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center Servers.
Embedded Computing
The MT41K256M16TG-125 provides high-density, low-power memory for embedded systems such as industrial PCs and single-board computers. Its 4Gb capacity and 1.35V operation enable efficient multitasking and reduced energy consumption, making it ideal for always-on applications. The 800 MHz clock ensures fast data access, while the 96-FBGA package fits compact PCB layouts. Designers can use this memory to run operating systems and complex applications without compromising power budgets.
Recommended
Networking Equipment
In networking devices like routers and switches, the MT41K256M16TG-125 offers the memory bandwidth needed for packet buffering and routing tables. Its 1600 MT/s data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in dense equipment. The 4Gb density allows for large routing tables and improved network performance. The parallel interface integrates seamlessly with network processors, ensuring reliable data transfer in demanding environments.
Recommended
Industrial Automation
The MT41K256M16TG-125 is suitable for industrial automation systems requiring reliable memory in harsh environments. Its 1.35V operation reduces power dissipation, and the 96-FBGA package provides robust solder joints for vibration resistance. The 800 MHz clock enables real-time data processing for control loops and data logging. With a wide operating temperature range (if specified), it can withstand industrial temperature extremes, ensuring continuous operation in factory floors and process control systems.
Recommended
Consumer Electronics
For consumer devices like smart TVs and set-top boxes, the MT41K256M16TG-125 provides the memory capacity for multimedia applications and smooth user interfaces. Its low 1.35V supply extends battery life in portable devices, while the 4Gb density supports high-resolution video streaming and multitasking. The 800 MHz speed ensures responsive performance, and the compact FBGA package enables slim device designs. This memory is ideal for applications where power efficiency and performance are critical.
Recommended
Automotive Infotainment
The MT41K256M16TG-125 can be used in automotive infotainment systems, providing memory for navigation, audio, and display applications. Its 1.35V operation reduces power consumption in vehicles, and the 96-FBGA package withstands automotive vibration and temperature variations. The 800 MHz clock supports fast data access for real-time navigation and media playback. With AEC-Q100 qualification (if available), it meets automotive reliability standards, making it suitable for in-vehicle electronics.
Recommended
Data Center Servers
In data center servers, the MT41K256M16TG-125 offers high memory density and low power consumption, contributing to energy-efficient computing. Its 4Gb capacity allows for large memory pools, while the 1.35V supply reduces cooling requirements. The 800 MHz clock provides sufficient bandwidth for server workloads, and the parallel interface integrates with server chipsets. This memory is ideal for cloud computing and virtualization, where reliability and performance are paramount.
Recommended
Recommended Products Summary
Engineering reference data for MT41K256M16TG-125 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT41K256M16RE-125 | MT41K256M16TW-125:P | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | [DATA_NEEDED] |
| Interface | Parallel | Parallel | Parallel | Parallel |
Key Differentiators
- Low voltage operation at 1.35V (vs K4B4G1646E-BYMA)
- High density 4Gb in 96-FBGA package (vs MT41K256M16RE-125)
- 800 MHz clock speed (vs MT41K256M16V80AWC1)
Design Notes
Ensure the 1.35V supply is clean and well-regulated. Use a low-dropout regulator or DC-DC converter with adequate decoupling capacitors (100nF and 10uF) near the VDD and VDDQ pins. The 1.35V rail should have a tolerance of +/-5% as per DDR3L specifications.
Maintain proper signal integrity for the high-speed parallel interface. Keep trace lengths matched for DQ and DQS signals, and use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential). Place the memory close to the controller to minimize trace length and reduce crosstalk.
The MT41K256M16TG-125 dissipates minimal power due to 1.35V operation, but ensure adequate airflow or a thermal pad for high-density designs. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values and design accordingly.
Compliance Information
RoHS compliant and lead-free as per Micron documentation. Other compliance details not specified in the provided data.
