MT41K256M16TG-125 - 4Gb DDR3L SDRAM 800MHz | Micron
Артикул: MT41K256M16TG-125 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.5 | $4.250,00 |
| 1.000 | $7.2 | $7.200,00 |
MT41K256M16TG-125 Обзор
DDR3L SDRAM is a low-voltage variant of DDR3 memory, operating at 1.35V instead of the standard 1.5V, reducing power consumption by approximately 20% while maintaining compatibility with DDR3 systems. It is part of the DRAM memory hierarchy, positioned between DDR3 and DDR4, and is widely used in computing, networking, and embedded systems.
Key features include a parallel interface with 800 MHz clock speed, 20 ns access time, and support for 1.35V operation with 1.5V compatibility mode. The device offers burst lengths of 8 and 4, on-die termination (ODT), and programmable CAS latency. Its low voltage operation makes it ideal for power-sensitive applications such as laptops, servers, and industrial electronics.
The MT41K256M16TG-125 utilizes Micron's advanced DRAM process technology, providing high reliability and performance. The 96-ball FBGA package ensures excellent thermal and electrical characteristics, with a compact footprint suitable for space-constrained designs. The device supports standard DDR3L features including auto-refresh, self-refresh, and partial array self-refresh for enhanced power management.
Typical applications include main memory for embedded systems, networking equipment, and industrial computing. Its high density and low power make it suitable for applications requiring large memory capacity with minimal energy consumption.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The 1.35V supply should be regulated accurately, and the memory controller must be configured for DDR3L timing parameters.
Аналоги без доработки для MT41K256M16TG-125 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT41K256M16TG-125 (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Supply Voltage, Clock Frequency, Operating Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT41K256M16RE-125
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT41K256M16TW-125:P
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT41K256M16HA-125XIT:E
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MT41K256M16V80AWC1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
K4B4G1646E-BYMA
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$14.3182 / шт.
Открыть даташит →MT41K256M16TG-125 Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Размер памяти | 4 Gbit |
| Организация памяти | 256M x 16 |
| Напряжение питания | 1.35 V |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| Интерфейс | Parallel |
| Корпус | 96-FBGA (8x14) |
| Тип монтажа | Surface Mount |
| Скорость передачи данных | 1600 MT/s |
| Статус RoHS | Compliant |
| Lead Free | Yes |
| Количество выводов | 96 |
Конфигурация выводов MT41K256M16TG-125
| Контакт A1 | VDD — Power supply |
| Контакт A2 | DQ0 — Data input/output |
| Контакт A3 | DQ1 — Data input/output |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ2 — Data input/output |
| Контакт B3 | DQ3 — Data input/output |
| Контакт C1 | VDDQ — I/O power supply |
| Контакт C2 | DQ4 — Data input/output |
| Контакт C3 | DQ5 — Data input/output |
| Контакт D1 | VSSQ — I/O ground |
| Контакт D2 | DQ6 — Data input/output |
| Контакт D3 | DQ7 — Data input/output |
Типичное применение
MT41K256M16TG-125 подходит для 6 применениеs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center Servers.
Embedded Computing
The MT41K256M16TG-125 provides high-density, low-power memory for embedded systems such as industrial PCs and single-board computers. Its 4Gb capacity and 1.35V operation enable efficient multitasking and reduced energy consumption, making it ideal for always-on applications. The 800 MHz clock ensures fast data access, while the 96-FBGA package fits compact PCB layouts. Designers can use this memory to run operating systems and complex applications without compromising power budgets.
Рекомендуется
Networking Equipment
In networking devices like routers and switches, the MT41K256M16TG-125 offers the memory bandwidth needed for packet buffering and routing tables. Its 1600 MT/s data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in dense equipment. The 4Gb density allows for large routing tables and improved network performance. The parallel interface integrates seamlessly with network processors, ensuring reliable data transfer in demanding environments.
Рекомендуется
Industrial Automation
The MT41K256M16TG-125 is suitable for industrial automation systems requiring reliable memory in harsh environments. Its 1.35V operation reduces power dissipation, and the 96-FBGA package provides robust solder joints for vibration resistance. The 800 MHz clock enables real-time data processing for control loops and data logging. With a wide operating temperature range (if specified), it can withstand industrial temperature extremes, ensuring continuous operation in factory floors and process control systems.
Рекомендуется
Consumer Electronics
For consumer devices like smart TVs and set-top boxes, the MT41K256M16TG-125 provides the memory capacity for multimedia applications and smooth user interfaces. Its low 1.35V supply extends battery life in portable devices, while the 4Gb density supports high-resolution video streaming and multitasking. The 800 MHz speed ensures responsive performance, and the compact FBGA package enables slim device designs. This memory is ideal for applications where power efficiency and performance are critical.
Рекомендуется
Automotive Infotainment
The MT41K256M16TG-125 can be used in automotive infotainment systems, providing memory for navigation, audio, and display applications. Its 1.35V operation reduces power consumption in vehicles, and the 96-FBGA package withstands automotive vibration and temperature variations. The 800 MHz clock supports fast data access for real-time navigation and media playback. With AEC-Q100 qualification (if available), it meets automotive reliability standards, making it suitable for in-vehicle electronics.
Рекомендуется
Data Center Servers
In data center servers, the MT41K256M16TG-125 offers high memory density and low power consumption, contributing to energy-efficient computing. Its 4Gb capacity allows for large memory pools, while the 1.35V supply reduces cooling requirements. The 800 MHz clock provides sufficient bandwidth for server workloads, and the parallel interface integrates with server chipsets. This memory is ideal for cloud computing and virtualization, where reliability and performance are paramount.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT41K256M16TG-125 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT41K256M16RE-125 | MT41K256M16TW-125:P | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Interface | Parallel | Parallel | Parallel | Parallel |
Ключевые отличия
- Low voltage operation at 1.35V (против K4B4G1646E-BYMA)
- High density 4Gb in 96-FBGA package (против MT41K256M16RE-125)
- 800 MHz clock speed (против MT41K256M16V80AWC1)
Заметки по проектированию
Ensure the 1.35V supply is clean and well-regulated. Use a low-dropout regulator or DC-DC converter with adequate decoupling capacitors (100nF and 10uF) near the VDD and VDDQ pins. The 1.35V rail should have a tolerance of +/-5% as per DDR3L specifications.
Maintain proper signal integrity for the high-speed parallel interface. Keep trace lengths matched for DQ and DQS signals, and use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential). Place the memory close to the controller to minimize trace length and reduce crosstalk.
The MT41K256M16TG-125 dissipates minimal power due to 1.35V operation, but ensure adequate airflow or a thermal pad for high-density designs. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values and design accordingly.
Информация о соответствии
RoHS compliant and lead-free as per Micron documentation. Other compliance details not specified in the provided data.
