NVD5117PLT4G-VF01 - 60V P-Channel MOSFET, 61A, DPAK | onsemi
MPN: NVD5117PLT4G-VF01 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.31 | $4.31 |
| 10 | $3.88 | $38.80 |
| 100 | $3.45 | $345.00 |
| 500 | $3.02 | $1,510.00 |
| 1,000 | $2.6 | $2,600.00 |
NVD5117PLT4G-VF01 Overview
A P-Channel MOSFET is a type of field-effect transistor in which the channel is doped to conduct when the gate is pulled below the source potential. P-Channel parts simplify high-side load switching in 12 V automotive and industrial systems because driving a low-side load switch with a P-Channel device only requires the gate to be pulled near ground to turn the device on, eliminating the need for a charge pump or bootstrap circuit. The NVD5117PLT4G-VF01 belongs to the power MOSFET -> discrete semiconductor -> semiconductor component taxonomy, and specifically targets the low/medium-voltage P-Channel segment dominated by 40 V to 100 V parts in DPAK/D2PAK packages.
Key specifications of the NVD5117PLT4G-VF01 include -60 V drain-to-source breakdown voltage, -61 A continuous drain current at case temperature, 16 mΩ typical R_DS(on) at V_GS = -10 V, 4.1 W power dissipation at TA, and 118 W power dissipation at Tc. The -VF01 suffix is a factory special part number; users should refer to the base NVD5117PL datasheet for guaranteed electrical characteristics. The device uses onsemi's proprietary PowerTrench process technology, which minimizes conduction loss and improves switching efficiency.
Typical applications include automotive load switching, high-side switching in 12 V systems, motor control, power management in industrial automation, battery protection circuits, and DC-DC converter high-side switches. The automotive-grade qualification makes the part especially suitable for body control modules, ECU power distribution, and lighting drivers where AEC-Q101 compliance is required by the OEM.
When designing with this MOSFET, ensure that the gate-source voltage stays within the ±20 V absolute maximum rating to prevent oxide damage. For high-current pulsed loads, verify the safe operating area against the datasheet SOA curves. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and minimize ringing on the gate node.
Drop-in alternatives for NVD5117PLT4G-VF01 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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NVD5117PLT4G-VF01 Maximum Ratings & Electrical Characteristics
| Manufacturer | onsemi |
| Part Number | NVD5117PLT4G-VF01 |
| FET Type | P-Channel |
| Drain-to-Source Voltage (V_DSS) | -60 V |
| Continuous Drain Current (I_D) at Tc | -61 A |
| Continuous Drain Current (I_D) at Ta | -11 A |
| R_DS(on) Max | 16 mΩ at V_GS = -10 V |
| Power Dissipation (PD) at Tc | 118 W |
| Power Dissipation (PD) at Ta | 4.1 W |
| Package | DPAK (TO-252), surface mount |
| Operating Temperature Range | -55°C to +175°C (typical for automotive grade MOSFETs) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant (Pb-free, Halogen-free) |
| Mounting Type | Surface Mount |
| Gate-Source Voltage Max | ±20 V (typical for this part family) |
NVD5117PLT4G-VF01 Pin Configuration
| Pin 1 | Gate — Gate control input; drive to near source voltage to turn off, pull to -10V relative to source to fully turn on |
| Pin 2 | Drain (Tab) — Drain terminal, internally connected to the mounting tab; for P-Channel, this is the more negative terminal |
| Pin 3 | Source — Source terminal; for P-Channel, this is the more positive terminal (typically connected to the supply rail in high-side switching) |
Safe Operating Area (DC, T_C = 25°C)
Typical Applications
NVD5117PLT4G-VF01 is suitable for 7 applications: Automotive 12V High-Side Load Switching, Battery Protection and Reverse-Polarity Switching, Industrial DC Motor Drive (H-Bridge High-Side), Synchronous Rectifier in 12V Buck Converters, LED Lighting Driver High-Side Switch, Power Distribution and Hot-Swap Controller, USB Type-C VBUS Load Switch.
Automotive 12V High-Side Load Switching
The NVD5117PLT4G-VF01's P-Channel polarity and -60V V_DSS rating make it ideal for 12V automotive high-side load switches driving lamps, solenoids, and motors. Its -61A continuous drain current at case temperature handles peak inrush loads such as bulb cold-start current (typically 8-10x steady state) without device stress. The 16 mΩ R_DS(on) keeps conduction loss below 1W at 8A steady load, which is critical for ECU power distribution where thermal budgets are tight. AEC-Q101 qualification allows direct use in body control modules, headlight drivers, and BCM power outputs. The P-Channel topology eliminates the need for a charge pump or bootstrap circuit, allowing the MCU GPIO to directly drive the gate through a pull-up resistor to 12V and a pull-down NPN to ground for turn-off.
Recommended
Battery Protection and Reverse-Polarity Switching
The NVD5117PLT4G-VF01's P-Channel configuration simplifies battery protection circuits by placing the MOSFET in the high-side return path, where it disconnects the load when turned off without requiring a ground-referenced sense resistor. The -60V V_DSS provides 2.5x headroom above a 24V nominal industrial battery or double-battery 24V automotive system, ensuring reliable blocking during load-dump transients. The 16 mΩ R_DS(on) at V_GS = -10V keeps voltage drop below 50mV at 3A load, preserving battery capacity during continuous discharge. AEC-Q101 qualification makes the device suitable for Li-ion battery management systems (BMS) where reliability is paramount.
Recommended
Industrial DC Motor Drive (H-Bridge High-Side)
In an H-bridge motor drive, the NVD5117PLT4G-VF01 serves as the high-side switch in the upper half-bridge, where its P-Channel polarity allows direct gate drive from the motor supply rail without a charge pump. The -61A continuous current rating handles peak motor stall currents in 24V brushed DC motors up to 1.5 HP, and the 118W power dissipation capability at Tc supports sustained operation with proper heatsinking. The 16 mΩ R_DS(on) minimizes conduction loss during PWM switching at 20-25 kHz, improving overall drive efficiency. The DPAK (TO-252) package with its exposed tab provides a low thermal resistance path to the PCB copper pour, enabling compact motor control PCB designs.
Recommended
Synchronous Rectifier in 12V Buck Converters
In a 12V-input buck converter, the NVD5117PLT4G-VF01 can be used as a synchronous rectifier (low-side switch) where its low 16 mΩ R_DS(on) replaces a Schottky diode and improves efficiency by 3-5% at full load. The -60V V_DSS rating is overkill for 12V systems but provides exceptional derating margin for reliable operation in high-temperature environments such as under-hood automotive ECUs. The AEC-Q101 qualification supports deployment in safety-critical power conversion applications including ADAS sensor power supplies. The 4.1W power dissipation at Ta requires careful PCB thermal design with adequate copper area or an external heatsink for sustained high-current operation.
Recommended
LED Lighting Driver High-Side Switch
The NVD5117PLT4G-VF01's P-Channel configuration simplifies LED driver high-side switching by allowing the LED string cathode to be grounded, eliminating the need for level-shifted PWM control signals. The -61A continuous current rating supports high-power LED arrays up to 30A in automotive headlight or industrial high-bay applications, and the 16 mΩ R_DS(on) keeps conduction loss manageable even at high PWM duty cycles. AEC-Q101 qualification enables use in automotive front lighting where reliability and thermal cycling tolerance are mandatory. The DPAK package's small footprint supports compact driver PCB designs behind LED modules.
Recommended
Power Distribution and Hot-Swap Controller
In 12V/24V power distribution systems, the NVD5117PLT4G-VF01 functions as a hot-swap controller high-side switch where its P-Channel polarity provides inrush current limiting by gradually turning on as the gate is pulled from 12V to ground. The -60V V_DSS rating handles 24V industrial bus systems with 2.5x margin, and the 16 mΩ R_DS(on) minimizes steady-state voltage drop in the distribution path. AEC-Q101 qualification supports deployment in server backplane power distribution and telecommunications equipment. The 118W power dissipation at Tc allows sustained high-current operation in well-cooled environments.
Recommended
USB Type-C VBUS Load Switch
The NVD5117PLT4G-VF01 can serve as the VBUS load switch in USB Type-C power delivery applications where its P-Channel configuration provides true load isolation when turned off, preventing back-powering through the VBUS pin. The -60V V_DSS rating is well above the 5V/9V/15V/20V USB PD voltage range, and the 16 mΩ R_DS(on) keeps voltage drop below 50mV at 3A output current. The AEC-Q101 qualification makes it suitable for automotive USB charging ports that must survive harsh under-dash thermal and electrical environments. The DPAK package supports compact in-cable or in-connector electronics designs.
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Engineering reference data for NVD5117PLT4G-VF01 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NVD5117PLT4G | SVD5117PLT4G | NVD5117PLT4G-VF03 |
|---|---|---|---|---|
| Package | DPAK (TO-252) | DPAK (TO-252) - same | DPAK (TO-252) - same | DPAK (TO-252) - same |
| Brand | onsemi | onsemi | onsemi | onsemi |
| V_DSS | -60 V | -60 V | -60 V | -60 V |
| Continuous Drain Current (Tc) | -61 A | -61 A | -61 A | -61 A |
| R_DS(on) at V_GS=-10V | 16 mΩ | 16 mΩ | 16 mΩ | 16 mΩ |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| AEC-Q101 Qualified | Yes | Yes | Per DigiKey parametric equivalent | Yes |
| RoHS / Pb-free | Yes | Yes | Yes | Yes (Lead-Free terminal finish) |
Key Differentiators
- P-Channel polarity simplifies high-side drive without charge pump (vs Generic N-Channel 60V MOSFETs in DPAK)
- AEC-Q101 qualified for automotive deployment (vs Industrial-grade P-Channel MOSFETs in DPAK)
- Custom OEM factory variant (-VF01 suffix) for traceability (vs NVD5117PLT4G base part)
Design Notes
Estimated: At V_DS = -12V, I_D = -10A continuous, and 16 mΩ R_DS(on), the steady-state conduction loss is approximately 1.6W. The DPAK package has a typical θJA of 50-62 °C/W on a standard 1 sq inch copper pour, yielding a junction temperature rise of 80-100 °C above ambient. For continuous high-current operation above 15A, a larger copper pour (>= 2 sq inches) or an external heatsink is recommended to keep Tj below 150 °C. Always refer to the SOA curves in the NVD5117PL datasheet for pulsed-load thermal limits.
Solder the DPAK tab (Drain) to a copper pour on the PCB that serves as both the electrical drain connection and the primary heat dissipation path. Use thermal vias (typically 9-12 vias of 0.3mm diameter) under the tab to conduct heat to inner copper layers for improved thermal performance. Place gate-drive components within 10mm of the gate pin to minimize parasitic inductance. Add a 10kΩ pull-up resistor from gate to source to ensure the MOSFET stays off during power-up transients before the gate driver settles.
Do not exceed the gate-source voltage absolute maximum of ±20V. P-Channel MOSFETs require the gate to be pulled below the source voltage to turn on; driving the gate high (toward source) turns the device off. Verify the body diode's reverse recovery characteristics before using this part in high-frequency synchronous rectifier applications above 100 kHz. For pulse load applications, consult the single-pulse and 100ms-pulse SOA curves rather than the DC SOA, as the DC curve understates the device's pulsed capability.
Keep the high-current drain loop (Drain → Load → Source → Ground return) as compact as possible to minimize parasitic inductance that can cause voltage overshoot during turn-off. Use a gate resistor of 10Ω to 100Ω to control switching speed and reduce ringing; lower values give faster switching but higher EMI, higher values give slower switching but lower EMI. Place a TVS diode or transient suppressor across the drain-source path if the load is inductive (solenoid, motor) to clamp inductive kickback below the -60V V_DSS rating.
Compliance Information
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant per the onsemi NVD5117PL datasheet. AEC-Q101 qualified for automotive applications (the -VF01 suffix is a factory custom variant of the AEC-Q101 base part).
