STW45NM50 vs IRFP260MPBF Comparison

Detailed side-by-side comparison of STW45NM50 by STMicroelectronics and IRFP260MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STW45NM50 IRFP260MPBF
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.55 $2.85
Polarity N-Channel —
Drain-Source Voltage (VDS) 500 V 200 V
Continuous Drain Current (ID) at 25°C 45 A —
Continuous Drain Current (ID) at 100°C 30 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.09 ohm —
Gate Charge (Qg) 120 nC —
Avalanche Energy (EAS) 1.2 J —
Power Dissipation (PD) 450 W —
Operating Temperature Range -55°C to +150°C -55C to +175C
Package TO-247 —
Mounting Type Through Hole Through Hole
RoHS Status Compliant Compliant
Halogen Free Yes —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide Semiconductor)
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
Package / Case — TO-247AC (3-lead through-hole)
Lead-Free — Yes
Avalanche Rated — Yes
MSL Level — Not Applicable (through-hole)

Datasheets & Resources

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