BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
N.º da peça: BSC009NE2LS5IATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.15 | $2,15 |
| 10 | $1.92 | $19,20 |
| 100 | $1.61 | $161,00 |
| 500 | $1.34 | $670,00 |
| 1.000 | $1.18 | $1.180,00 |
| 3.000 | $1.02 | $3.060,00 |
BSC009NE2LS5IATMA1 Visão geral
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a P-type body region to form an N-type conduction channel between source and drain. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power-device family (alongside IGBTs and GaN HEMTs), serving as the fundamental switching element in modern switch-mode power supplies, motor drives, and battery-protection circuits. The OptiMOS™ 5 generation specifically targets sub-30V rails where it competes with integrated DrMOS and GaN FETs by offering a mature silicon process, broad second-source availability, and well-characterized gate-drive requirements.
Key electrical parameters include V_DS = 25V maximum, V_GS(th) = 1.0V to 2.0V typical (1.7V nominal), continuous I_D = 40A at T_A=25°C on a small PCB pad rising to 217A pulsed at T_C=25°C, pulsed drain current capability far exceeding continuous ratings for short switching transients. Power dissipation is rated 2.5W at T_A and 74W at T_C, giving designers ample thermal headroom when mounted on sufficient copper. Total gate charge Q_G is 23 nC typical at V_GS=0 to 4.5V, and the input capacitance C_iss is 3200 pF typical — low enough to be driven efficiently by standard gate drivers without excessive crossover loss.
Typical applications include synchronous rectification in 12V-output DC-DC converters, OR-ing FETs in redundant server PSU and telecom power architectures, hot-swap / e-fuse circuits on distributed 12V/5V backplanes, motor-drive half-bridges in battery-powered tools, and high-current load switches in USB-PD and Type-C sink applications where low R_DS(on) directly reduces conduction loss and improves system efficiency. The device's monolithic Schottky-like body diode and low reverse-recovery charge also make it suitable for high-frequency buck and forward converters where dead-time losses dominate.
When designing with this MOSFET, pay particular attention to gate-drive voltage: V_GS=10V is required to achieve the datasheet's 0.95 mΩ R_DS(on), so a bootstrap or charge-pump supply is typically required in high-side applications. Thermal management must include a sufficiently large copper pour (the PG-TDSON-8-7 has an exposed drain pad); at 217A pulsed the silicon can exceed safe junction temperature within milliseconds if the thermal path is inadequate.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes drawn from the Infineon OptiMOS™ 5 datasheet — context not typically aggregated in manufacturer documentation or distributor listings.
Alternativas drop-in para BSC009NE2LS5IATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com BSC009NE2LS5IATMA1 (mesmo formato e footprint) — diferindo em Technology, Operating Temperature Range, Package, MSL Level, Drain-Source Voltage (VDS).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSC012NE2LS5IATMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC006NE2LS5IATMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC009NE2LS5IATMA1 Classificações máximas e características elétricas
| Manufacturer Part Number | BSC009NE2LS5IATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) |
| Tipo de transistor | N-Channel MOSFET |
| Configuration | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | 25 V |
| Gate-Source Voltage (V_GS) max | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | 2.5 W |
| Power Dissipation (P_D) @ T_C | 74 W |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | 3200 pF |
| Faixa de temperatura de operação | -55°C to +150°C |
| Encapsulamento | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount |
| Nível MSL | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Matte Tin (e3 per JESD-609) |
| Number of Terminals | 8 |
| Status RoHS | Compliant |
Guia de Configuração de Pinos do BSC009NE2LS5IATMA1 pg-tdson-8-7 (superso8 5x6 mm)
Configuração de pinos para BSC009NE2LS5IATMA1 (pacote pg-tdson-8-7 (superso8 5x6 mm)). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para BSC009NE2LS5IATMA1.
Consulte a ficha técnica para a configuração completa dos pinos.
Área de Operação Segura (DC)
Aplicações típicas
BSC009NE2LS5IATMA1 é adequado para 7 aplicaçãos: 12V Synchronous Rectification, OR-ing FET for Redundant Power, Hot-Swap / e-Fuse Switch, Battery-Protection Load Switch, Motor-Drive Half-Bridge, USB-PD Sink Load Switch, Point-of-Load DC-DC Converter.
12V Synchronous Rectification
Used as the low-side FET in 12V-output buck converters where its 0.95 mΩ R_DS(on) and 23 nC Q_G minimize conduction and switching loss at 300-500 kHz. Per the Infineon datasheet, the device's low FOM (R_DS(on)×Q_G) outperforms prior OptiMOS generations, making it a strong fit for server and telecom point-of-load regulators seeking >97% efficiency.
Recomendado
OR-ing FET for Redundant Power
Used as an OR-ing FET in N+1 redundant 12V server PSU and telecom shelf architectures. The BSC009NE2LS5IATMA1's 0.95 mΩ R_DS(on) yields only 1.7W dissipation at 43A load per rail, while the fast body diode enables hot-swap insertion without ringing. The PG-TDSON-8-7 footprint accepts a heatsink tab for additional thermal margin in dense backplane designs.
Recomendado
Hot-Swap / e-Fuse Switch
Used as the main switching element in 12V hot-swap controllers on storage and networking backplanes. Per the Infineon datasheet, the device's 217A pulsed rating handles inrush transients from large bulk capacitors, while the 0.95 mΩ R_DS(on) keeps steady-state loss under 1W per FET at typical 30A loads, simplifying thermal management on FR-4 boards.
Recomendado
Battery-Protection Load Switch
Employed as the main disconnect FET in 3-4S lithium battery packs and portable power tools. The BSC009NE2LS5IATMA1's 25V V_DS rating, 0.95 mΩ R_DS(on), and SuperSO8 5x6 footprint deliver low-loss load switching in a compact PCB area. The 1.7V V_GS(th) allows direct drive from a low-voltage battery-monitoring MCU without auxiliary charge-pump circuitry.
Recomendado
Motor-Drive Half-Bridge
Configured as low-side switch in 12V/24V brushless DC motor half-bridges for power tools, fans, and small e-mobility drives. Per the Infineon datasheet, the device's 0.95 mΩ R_DS(on) minimizes I²R losses during high-torque PWM cycles at 20-50 kHz, and the rugged avalanche-rated body diode absorbs inductive kickback without external TVS clamps.
Recomendado
USB-PD Sink Load Switch
Used as the main VBUS load switch in USB-PD sink applications delivering 5V/3A-5A to downstream devices. The BSC009NE2LS5IATMA1's 25V V_DS rating and 0.95 mΩ R_DS(on) accommodate 20V USB-PD negotiation profiles while keeping conduction loss under 250 mW at 5A, enabling efficient Type-C docking-station and hub designs without external heatsinking.
Recomendado
Point-of-Load DC-DC Converter
Used as the synchronous FET in buck converters stepping 12V down to 1-3.3V core voltages for FPGAs, ASICs, and processors. Per the Infineon datasheet, the 0.95 mΩ R_DS(on) and 23 nC Q_G reduce total loss to under 2% at full load, supporting the high-current (>30A) transient demands of modern processors with sub-microsecond load-step response.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BSC009NE2LS5IATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSC012NE2LS5IATMA1 | BSC006NE2LS5IATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TSDSON-8 (3x3 mm) |
| V_DS max | 25 V | 25 V | 25 V | 25 V |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | 1.2 mΩ (+26%) | 0.6 mΩ (-37%) | 3.1 mΩ (+226%) |
| Continuous I_D @ T_C=25°C | 217 A (pulsed) | ~200 A (pulsed) | ~250 A (pulsed) | ~80 A (pulsed) |
| Total Gate Charge Q_G typ | 23 nC | 20 nC | 30 nC | 9 nC |
| Technology | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) |
| RoHS / Lead-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Principais diferenciais
- Lower R_DS(on) in same package than BSC012 variant (vs BSC012NE2LS5IATMA1)
- Higher current capability in same package than BSC006 (vs BSC006NE2LS5IATMA1)
- Larger package (5x6) than BSZ031 with better thermal performance (vs BSZ031NE2LS5ATMA1)
Notas de projeto
Estimated: at 100A continuous conduction with V_GS=10V, power dissipation is P=I²×R = 100²×0.95mΩ ≈ 9.5W at T_J=25°C and roughly 13W at T_J=125°C (R_DS(on) rises ~40% hot). The PG-TDSON-8-7 package has θ_JC ≈ 1.5°C/W on the exposed drain pad; on a 1-square-inch 2-oz copper pour θ_JA falls to ~35°C/W. At 9.5W on a 35°C/W board, junction rise is ~330°C — clearly insufficient, so heatsinking or wider copper (≥3 sq-in 4-layer) is required for continuous 100A operation. For ≤40A typical applications, a 1 sq-in 2-oz pour is adequate.
Per the Infineon PG-TDSON-8-7 land-pattern recommendation, route the high-current drain on the top layer directly into the exposed pad — never through vias, since via resistance and inductance dominate at 100A+ peaks. Use multiple thermal vias (≥9×0.3mm) under the pad to inner copper planes. Keep the gate loop (gate-driver → gate resistor → gate pin → source pin → driver return) under 5 nH to prevent dv/dt-induced ringing that can cause MOSFET shoot-through in half-bridge configurations.
Do not assume V_GS(th)=1.7V is sufficient to fully enhance the device — at V_GS=4.5V R_DS(on) is roughly 2× the V_GS=10V figure (per Infineon datasheet characterization curves). For synchronous-rectifier bootstrap supplies, the bootstrap voltage may sag below 8V at light load, increasing conduction loss by 30-50%; use a charge pump or external 10V bias when possible. Also note that the device's avalanche rating is for unclamped inductive switching only — for H-bridge motor-drive applications, add external TVS diodes to absorb repetitive avalanche energy.
Informações de conformidade
RoHS compliant and lead-free per JESD-609 e3 terminal finish (matte tin) per Infineon product page. AEC-Q100 not applicable — this is a discrete MOSFET, not qualified to automotive grade; for automotive use consider Infineon's automotive-grade OptiMOS 5 variants. Halogen-free status not explicitly stated in provided data.
