BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
MPN: BSC019N04LSTATMA1 ✓ فعالBSC019N04LSTATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs such as the BSC019N04LSTATMA1 are the workhorses of modern synchronous buck converters, where two MOSFETs (a control FET and a sync FET) alternate to step down a higher DC rail to a lower voltage. OptiMOS 5 is Infineon's fifth-generation 40 V trench MOSFET platform, designed to deliver the industry's lowest Figure of Merit (FOM = RDS(on) x Qg) at this voltage class for highest efficiency at high switching frequencies.
Key features include 1.9 mOhm maximum RDS(on) at VGS = 10 V, a 40 V VDS rating that provides ample margin above nominal 12 V or 24 V rails, and avalanche-rated ruggedness with a 94 W power dissipation capability (Tc). The logic-level-compatible gate threshold (typ. 1.7 V) allows direct drive from standard 3.3 V or 5 V PWM controllers, eliminating the need for a gate-driver bootstrap in some low-side topologies. The SuperSO8 footprint also offers an exposed thermal pad with theta_JA in the low-40s C/W range, enabling compact designs without a discrete heatsink at moderate loads.
Typical applications include synchronous rectification on the secondary side of isolated DC-DC bricks, point-of-load (POL) buck converters in telecom and server motherboards, hot-swap and OR-ing controllers, and low-side switches for motor-control H-bridges. At 12 V input the part can deliver tens of amps continuously with negligible conduction loss.
When designing with this device, pay close attention to gate-drive voltage and dv/dt. Although logic-level compatible, a 10 V drive maximizes RDS(on) margin; at 4.5 V the on-resistance roughly doubles. Always place the gate resistor and local bypass capacitor within 5 mm of the gate pin to suppress parasitic turn-on.
This page synthesizes distributor pricing, drop-in OptiMOS 5 and competitive alternatives, and practical layout notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل BSC019N04LSTATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC019N04LSTATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
BSC019N04LS
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC028N06NSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC014NE2LSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0921NDIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTMFS4C03N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC019N04LSTATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A |
| Continuous Drain Current (ID, Ta=25C) | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | 1.7 V |
| Total Gate Charge Qg typ | 85 nC |
| Power Dissipation PD (Tc=25C) | 94 W |
| آپریٹنگ درجہ حرارت رینج | -55 C to +150 C |
| پیکیج | TDSON-8 (SuperSO8) 5x6 mm |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (unlimited) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Avalanche Rated | Yes |
BSC019N04LSTATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (connected to pins 1-3 internally) |
| پن 2 | Source — Source terminal |
| پن 3 | Source — Source terminal |
| پن 4 | Gate — Gate drive input |
| پن 5 | Drain — Drain terminal (exposed pad beneath package) |
| پن 6 | Drain — Drain terminal (exposed pad area) |
| پن 7 | Source — Source terminal |
| پن 8 | Source — Source terminal |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
BSC019N04LSTATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Rectification in 12 V Buck Converters, Server and Telecom DC-DC Brick Converters, Hot-Swap and OR-ing Controllers, Low-Side Switch in Motor Drive H-Bridges, Battery Management and Protection FETs, USB-PD and Fast-Charge Power Stages.
Synchronous Rectification in 12 V Buck Converters
BSC019N04LSTATMA1 serves as the low-side sync FET in 12 V-to-1.x V point-of-load buck converters where its 1.9 mOhm RDS(on) at 10 V VGS minimizes conduction loss at high output currents. The 85 nC typical gate charge keeps switching loss low at 300-500 kHz, supporting > 95 % peak efficiency in 25-40 A server POL designs. Compared with a Schottky diode the MOSFET halves rectifier loss but requires careful dead-time control to prevent shoot-through. Source: Infineon OptiMOS 5 datasheet typical application circuit.
تجویز کردہ
Server and Telecom DC-DC Brick Converters
In isolated 48 V-to-12 V intermediate bus converters and 12 V-to-1 V VRM stages, BSC019N04LSTATMA1 provides the low-side switch in synchronous-rectified full-bridge or hard-switched buck topologies. The 40 V VDS gives safe margin above 12 V outputs with inductive ringing, and the 161 A pulsed rating handles transient load steps typical in server CPU power delivery. The TDSON-8 footprint enables a compact 25 A/inch^2 power-density layout. Source: Infineon OptiMOS 5 product family reference designs.
تجویز کردہ
Hot-Swap and OR-ing Controllers
BSC019N04LSTATMA1 is well suited as the pass element in 12 V hot-swap and OR-ing controllers where its low RDS(on) limits steady-state I^2R dissipation and its 94 W power rating absorbs inrush transients. The logic-level-compatible threshold allows direct PWM control for inrush current profiling. Use a TVS or snubber to clamp inductive transients during connector mating. Recommended for -48 V telecom distribution and 12 V server backplanes.
تجویز کردہ
Low-Side Switch in Motor Drive H-Bridges
BSC019N04LSTATMA1 functions as the low-side FET in 12-24 V brushed-DC and small BLDC motor H-bridges for robotics, e-mobility, and industrial automation. Its 1.9 mOhm RDS(on) minimizes conduction loss during PWM at 20-50 kHz, and the 40 V VDS tolerates inductive flyback when paired with a flyback diode. Use the IR2104STRPBF half-bridge driver for safe gate control. Avoid continuous operation above 50 A without active cooling.
تجویز کردہ
Battery Management and Protection FETs
In 4S-6S Li-ion battery packs (nominal 14.4-21.6 V), BSC019N04LSTATMA1 acts as the discharge or charge protection FET where its 40 V VDS provides margin above the fully-charged 25.2 V stack and its 1.9 mOhm RDS(on) minimizes loss during continuous 20-30 A discharge. The exposed-pad TDSON-8 enables direct PCB heatsinking for thermal management. Pair with a battery monitor such as the TLE9015 for cell balancing and overcurrent protection.
تجویز کردہ
USB-PD and Fast-Charge Power Stages
BSC019N04LSTATMA1 supports the synchronous buck stage of USB Power Delivery 3.1 chargers delivering 100-140 W at 20 V output. Its 40 V VDS handles USB-PD Extended Power Range (EPR) outputs to 28 V, and 1.9 mOhm RDS(on) keeps full-load efficiency above 96 %. The TDSON-8 footprint supports compact 1-2 cu-in charger designs. Use a digital PFC + LLC front end and the BSC019N04LSTATMA1 in the secondary-side sync-rectifier position.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC019N04LSTATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC028N06NSTATMA1 | BSC0921NDIATMA1 | ISC015N06NM5ATMA1 | NTMFS4C03N |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TDSON-8 (SuperSO8) 5x6 mm | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SO-8FL) 5x6 mm - same |
| Drain-Source Voltage VDS max | 40 V | 60 V | 25 V | 60 V | 40 V |
| On-Resistance RDS(on) max @ 10V | 1.9 mOhm | 2.8 mOhm | 9.2 mOhm | 1.5 mOhm | 2.0 mOhm |
| Continuous Drain Current (Tc=25C) | 161 A | 100 A | 48 A | 176 A | 140 A |
| Power Dissipation PD (Tc=25C) | 94 W | 78 W | 44 W | 104 W | 83 W |
| Gate Threshold VGS(th) typ | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.6 V |
| Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi PowerTrench |
| Approx Unit Price @ 1000 (USD, as of 2026-09-14) | $1.42 | $1.25 | $0.95 | $1.55 | $1.30 |
اہم امتیازی خصوصیات
- Industry-leading FOM at 40 V in TDSON-8 (بمقابلہBSC0921NDIATMA1)
- Higher VDS rating than 25 V Infineon alternatives (بمقابلہBSC014NE2LSIATMA1)
- Cross-brand footprint compatibility with onsemi SO-8FL parts (بمقابلہNTMFS4C03N)
ڈیزائن نوٹس
Estimated: At continuous 30 A with RDS(on) = 1.9 mOhm, conduction loss is I^2 * R = 30^2 * 0.0019 = 1.71 W. The TDSON-8 with 1 oz copper on a 2-layer board has theta_JA roughly 50 C/W (per JEDEC EIA/JESD51), giving a 86 C temperature rise above ambient. At 30 C ambient the junction reaches 116 C - within the 150 C rating but with limited margin. Use 4-layer board with 2 oz copper on top side or a small heatsink pad for > 20 A continuous operation.
Place the gate-drive loop (gate resistor, gate driver output, and FET gate) within 5 mm of the gate pin to minimize parasitic inductance. The source connection (pins 1-3, 7-8) must be a continuous copper pour to the ground plane, with at least 4 vias stitching the top-side source copper to internal ground planes. The exposed drain pad (pin 5-6) needs a thermal via array (typically 9-16 vias in a 3x3 to 4x4 pattern) to spread heat into the inner copper layers.
Do not drive BSC019N04LSTATMA1 directly from a 3.3 V microcontroller GPIO. Although VGS(th) is 1.7 V, at 3.3 V VGS the RDS(on) doubles to ~3.8 mOhm, doubling conduction loss and risking thermal runaway at high current. Use a dedicated gate driver such as Infineon 1EDN71x or 2ED2106S06F that supplies 8-10 V to the gate. Also, do not exceed 40 V VDS - inductive kickback in motor/relay applications commonly spikes above 30 V and requires a TVS clamp.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product declaration. Lead-free reflow-compatible (MSL1, 245 C peak per JEDEC J-STD-020). Not AEC-Q100 qualified; for automotive designs use Infineon's automotive-grade OptiMOS part with -Q suffix.
