H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory
N.º da peça: H5AN4G8NBJR-RDC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.9 | $39,00 |
| 100 | $3.55 | $355,00 |
| 500 | $3.25 | $1.625,00 |
| 1.000 | $2.95 | $2.950,00 |
H5AN4G8NBJR-RDC Visão geral
A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock (double data rate) and communicates over a point-to-point or multi-drop command/address bus with the memory controller. Within the memory hierarchy, it sits as main system memory between CPU caches and mass storage, and is a member of the broader DRAM > synchronous DRAM > DDR SDRAM family tree, succeeding DDR3 with lower operating voltage, higher data rates, and bank-group architecture.
Key features include a 4Gb density organized as 512M words x 8 bits, an internal 8-bank and bank-group (x4/x8: 4 bank groups) architecture that increases effective data rate utilization, and DDR4-class low supply voltage for reduced system power. The device supports the standard DDR4 SDRAM command set including bank-group activation management, making it suitable for memory controllers with DDR4 scheduling.
Technical depth: the device uses a CMOS DRAM core with prefetch architecture per the JEDEC DDR4 specification, refreshed internally at standard intervals with self-refresh support for low-power standby. SSTL-12-style signaling on a separate VDD/VDDQ supply domain enables clean signal integrity at DDR4 data rates on the CA and DQ buses, controlled through on-die termination (ODT) and CA parity as defined by the DDR4 standard.
Typical applications include desktop and notebook main memory DIMMs and solder-down memory, consumer electronics such as set-top boxes and smart TVs, industrial controllers requiring large memory density, and networking/communication equipment needing high bandwidth per DRAM.
Design consideration: DDR4 signal integrity depends heavily on fly-by command/address routing, on-die termination settings, and ZQ calibration resistors; follow the memory controller layout guidelines and verify timing closure at the target data rate.
This page synthesizes datasheet references, drop-in alternatives, pricing tiers, and practical design notes not found in a single manufacturer datasheet.
Alternativas drop-in para H5AN4G8NBJR-RDC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5AN4G8NBJR-RDC (mesmo formato e footprint) — diferindo em Package, Data Rate, Interface, Speed Grade, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5AN4G8NBJR-PBC
✅ Drop-In✓ Em estoque
$2.2 / unidade
Ver ficha técnica →H5AN4G8NBJR-UHC
✅ Drop-In✓ Em estoque
$3.18 / unidade
Ver ficha técnica →H5AN4G8NBJR-VKC
✅ Drop-In✓ Em estoque
$2.4 / unidade
Ver ficha técnica →H5AN4G8NBJR-XXC
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT40A512M8RH-083E
✅ Drop-In✓ Em estoque
$3.3 / unidade
Ver ficha técnica →H5AN4G8NBJR-RDC Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 4 Gbit |
| Organização da memória | 512M x 8 |
| Interface | DDR4 (Double Data Rate IV) |
| Encapsulamento | 78-ball FBGA |
| Tipo de montagem | Surface Mount |
| Bank Architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Auto-refresh and self-refresh |
| Termination | On-Die Termination (ODT) |
| Status RoHS | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | CMOS |
| Manufacturer | SK hynix |
| Family Series | H5AN4G4/8/6NBJR |
Guia de Configuração de Pinos do H5AN4G8NBJR-RDC 78-ball fbga
Configuração de pinos para H5AN4G8NBJR-RDC (pacote 78-ball fbga). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para H5AN4G8NBJR-RDC.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5AN4G8NBJR-RDC é adequado para 6 aplicaçãos: PC and Notebook Main Memory, Consumer Electronics (Set-Top Box, Smart TV), Industrial Controllers and HMI, Networking and Communication Equipment, Embedded Graphics and Display Systems, Test and Measurement Instruments.
PC and Notebook Main Memory
The H5AN4G8NBJR-RDC is designed primarily as main system memory in desktop, notebook, and all-in-one PC platforms. Its 4Gb density organized as 512M x 8 allows eight devices to populate a 64-bit unbuffered DIMM channel for 4GB-per-rank configurations. DDR4 bank-group architecture (4 bank groups x 8 banks on x8 devices) sustains high effective bandwidth by allowing back-to-back activations in different groups, matching CPU prefetch patterns. Designers should enable on-die termination and follow fly-by CA routing per DDR4 module reference designs; the lead-free, halogen-free FBGA construction supports RoHS-compliant consumer builds.
Recomendado
Consumer Electronics (Set-Top Box, Smart TV)
Consumer DDR4 designs such as set-top boxes, smart TVs, and game consoles use solder-down 78-ball FBGA DRAMs like the H5AN4G8NBJR-RDC next to SoCs with integrated DDR4 controllers. The 4Gb x8 organization pairs well with SoCs that support 32-bit or 64-bit DDR4 buses, giving 2-8 GB of system memory with only 4-16 devices. The consumer C-grade bin balances cost and power at 1.2V-class operation, and self-refresh retains content during low-power standby modes. PCB designers should follow the SoC vendor's DDR4 SI guidelines: matched DQ/DM/DQS per byte lane, VTT termination rails, and ZQ calibration resistor placement.
Recomendado
Industrial Controllers and HMI
Industrial automation controllers, HMIs, and edge gateways need large memory density and bandwidth for buffering fieldbus traffic, running Linux, and logging data. The H5AN4GxNBJR family is available in industrial -I grade bins (per the series datasheet), and the -RDC consumer bin serves cost-sensitive industrial variants. DDR4's lower 1.2V supply reduces dissipation in sealed, fanless enclosures compared to DDR3 designs. Soldered FBGA memory also improves vibration reliability versus socketed SODIMMs. Designers must confirm the -RDC bin's temperature rating, or select the -xxI industrial variant where -40C to +85C ambient operation is required.
Recomendado
Networking and Communication Equipment
Routers, switches, and access points require high-bandwidth main memory for packet buffering and control-plane software. The H5AN4G8NBJR-RDC provides 4Gb per device, and x8 devices can be byte-laned across a 64-bit bus to sustain multi-Gbps throughput, with bank-group interleaving reducing effective latency for random packet access patterns. The DDR4 CA parity feature improves command-bus error resilience on long fly-by traces typical of switch PCBs. Octopart showed 34,000 pcs of family stock (July 2026), but 2026 DDR4 supply constraints make dual-sourcing with Micron MT40A512M8RH-083E prudent for networking BOMs.
Recomendado
Embedded Graphics and Display Systems
Embedded graphics processors and display SoCs use 4Gb x8 DDR4 devices such as the H5AN4G8NBJR-RDC as frame buffer and texture memory. The DDR4 data rate supports the write bandwidth needed for high-resolution frame updates (e.g., 4K display pipelines), while on-die termination maintains signal integrity on the shared video-memory bus. The x8 organization provides per-byte data masking (DM), which is efficient for partial-frame and GUI-layer updates. Layout should keep each DQS/DQ byte lane length-matched within controller specification, and refresh scheduling should be coordinated with the graphics controller to avoid visual jitter under load.
Recomendado
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators embed DDR4 SDRAM like the H5AN4G8NBJR-RDC as deep acquisition memory. The 4Gb density supports long waveform records; x8 byte-lane organization with DM enables efficient, unmasked contiguous capture, while DDR4 bank-group architecture sustains streaming write bursts from high-speed acquisition ASICs. Design considerations include careful DQS gating calibration at the controller, ECC options (with additional x8 devices providing SECDED on instrument platforms), and thermal margining since instruments operate in enclosed chassis. Self-refresh supports post-trigger data retention through instrument standby states.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5AN4G8NBJR-RDC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKC | MT40A512M8RH-083E |
|---|---|---|---|---|
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Memory Interface | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| RoHS / Lead-Free | Lead-Free & Halogen-Free (RoHS Compliant) | RoHS compliant (family) | RoHS compliant (family) | RoHS compliant |
Principais diferenciais
- Newest C-generation silicon in family (vs H5AN4G8NBJR-PBC)
- Higher data-rate headroom vs Micron cross (vs MT40A512M8RH-083E)
- Green package compliance (vs Generic DDR4 parts)
Notas de projeto
DDR4 x8 buses carry data at the controller's data rate on DQ/DQS/DM lanes and command/address on a fly-by CA bus. Keep each DQS-DQ byte lane length-matched to the controller specification, route VTT termination with adequate decoupling near each DRAM, and place the ZQ calibration resistor (240 ohm, 1%) within the datasheet-specified trace length of the ZQ ball. Use on-die termination (ODT) settings from the controller's training algorithm rather than fixed register values for first-pass margin.
Separate VDD, VDDQ, and VPP supply domains per the DDR4 standard with local bulk capacitance (e.g., 470uF per domain on a multi-device bus) plus 0.1uF per power/ground ball pair. Estimated: a 4Gb x8 DDR4 at 2400 Mbps with roughly 10mA per DQ switching at 1.2V can draw on the order of hundreds of mW per device active - verify against the datasheet IDD tables for your data rate and utilization, and size the VTT rail for peak ODT current.
Do not assume suffix interchangeability: within the H5AN4G8NBJR family, the two letters after 'BJR-' encode silicon generation, speed, and temperature bin, and memory controllers validate these via training and SPD data. Substituting a -RDC with a -VKC (DDR4-2666) is generally safe in one direction (faster bin on a slower setting) but never the reverse. Also confirm consumer (C) vs industrial (I) temperature grading before releasing industrial BOMs.
For solder-down FBGA designs, prefer six-layer or more PCBs with dedicated DDR4 power planes, fan out the 78 balls with via-in-pad or dog-bone escapes per SK hynix package layout guidelines, and avoid routing DDR4 signals across plane splits. Keep impedance-controlled 40-ohm DQ/CA traces and reference them to a continuous ground plane; this family is mechanically footprint-compatible across the H5AN4G4/8/6NBJR variants, enabling layout reuse across density and width options.
Informações de conformidade
Datasheet listings describe the H5AN4G8NBJR family as Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in provided data.