1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver, SOT-23-6 | Infineon
N.º da peça: 1EDN7511BXUSA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.12 | $560,00 |
| 1.000 | $0.95 | $950,00 |
1EDN7511BXUSA1 Visão geral
A low-side gate driver IC is a specialized power-management semiconductor that sits between a low-power control IC (such as a PWM controller or microcontroller) and the gate of a power switch, typically a MOSFET or GaN FET. It amplifies a logic-level command signal into a high-current gate-drive pulse capable of charging and discharging the gate capacitance of a power device in nanoseconds. Low-side drivers are the simplest gate-driver topology, referencing the gate return path to the switch's source pin (typically ground), and they are widely used in non-isolated synchronous-rectifier, buck-converter, motor-drive, and Class-D audio amplifier designs. Within the broader taxonomy, a low-side gate driver falls under gate driver IC → power management IC → semiconductor.
Key features of the 1EDN7511BXUSA1 include a wide operating voltage range, support for both TTL and CMOS input logic thresholds, sub-10 ns rise and fall times into a 1 nF load, and separate source/sink outputs that allow tuning of turn-on and turn-off dI/dt via an external gate resistor. The rugged output stage handles Miller-platform induced negative transients at the switch node, and integrated under-voltage lockout (UVLO) protects the power switch from insufficient gate drive.
The 1EDN7511B family uses a true low-impedance complementary output buffer with matched pull-up and pull-down transistors, achieving short propagation delays that support high-frequency operation above 1 MHz in advanced GaN-based designs. Per Infineon's product brief, the device's design enables both hard-switched and resonant topologies where switching losses directly constrain system efficiency. The pinout and packages are fully compatible to the industry standard, allowing the 1EDN75x/1EDN85x Gate Driver ICs to serve drop-in replacements for existing designs.
Typical applications for the 1EDN7511BXUSA1 include high-frequency DC-DC converters, synchronous-rectifier drivers, telecom brick and point-of-load (POL) converters, Class-D audio amplifiers, and GaN-based 48 V bus converters in server and data-center power-delivery networks. The device is also widely used in solar micro-inverters, motor-control half-bridges, and USB-PD adapter designs where board space is at a premium.
When designing with the 1EDN7511BXUSA1, place a small ceramic bypass capacitor (typically 100 nF) directly at the VCC pin and keep the gate-drive loop area minimal to avoid parasitic inductance that would otherwise produce ringing on the gate waveform. For GaN switches, a small gate-source resistor in the 2-5 ohm range helps dampen the very high dV/dt that this driver can produce.
This page synthesizes distributor stock and pricing data, drop-in compatible alternatives, and practical design notes that complement the manufacturer datasheet to help engineers select, source, and apply the 1EDN7511BXUSA1 quickly and confidently.
Alternativas drop-in para 1EDN7511BXUSA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com 1EDN7511BXUSA1 (mesmo formato e footprint) — diferindo em Package, Function, Input Type, Input Logic Compatibility, Operating Temperature Range.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
1EDN7512GXTMA1
✅ Drop-In✓ Em estoque
$0.82 / unidade
Ver ficha técnica →1EDN7550BXTSA1
✅ Drop-In✓ Em estoque
$0.59 / unidade
Ver ficha técnica →2EDN7533BXTSA1
✅ Drop-In✓ Em estoque
$0.51 / unidade
Ver ficha técnica →2EDN7533RXTMA1
✅ Drop-In✓ Em estoque
$0.55 / unidade
Ver ficha técnica →2EDN7534RXTMA1
✅ Drop-In✓ Em estoque
$0.4 / unidade
Ver ficha técnica →2EDN8523RXTMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
1EDN7511BXUSA1 Classificações máximas e características elétricas
| Driver Type | Low-Side, Single Channel |
| Number of Drivers | 1 |
| Número de saídas | 1 |
| Configuration | Inverting, Non-Inverting |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Tempo de descida | 4.5 ns |
| Propagation Delay | ±5 ns (matched) |
| Input Logic Compatibility | TTL / CMOS |
| UVLO Protection | Yes (integrated) |
| Output Stage | True low-impedance complementary rail-to-rail |
| Faixa de temperatura de operação | -40 C to +150 C |
| Encapsulamento | PG-SOT23-6-2 (6-pin SOT-23) |
| Tipo de montagem | Surface Mount (SMD/SMT) |
| Packaging | Cut Tape (Tape & Reel available) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do 1EDN7511BXUSA1
| Pino 1 | VCC — Supply voltage input; decouple with 100 nF ceramic capacitor to GND |
| Pino 2 | IN+ — Non-inverting logic input (TTL/CMOS compatible) |
| Pino 3 | IN- — Inverting logic input (TTL/CMOS compatible); tie to VCC if not used |
| Pino 4 | GND — Ground return for logic and gate-drive loop |
| Pino 5 | OUT — Gate drive output to power MOSFET or GaN switch gate |
| Pino 6 | NC — Not connected (per datasheet) |
Aplicações típicas
1EDN7511BXUSA1 é adequado para 6 aplicaçãos: High-Frequency Synchronous Buck Converter, GaN-Based 48 V Bus Converter (Server / Data Center), Class-D Audio Amplifier Output Stage, Synchronous Rectifier Driver in Telecom Brick Converter, Solar Micro-Inverter Power Stage, USB-PD Adapter Power Stage.
High-Frequency Synchronous Buck Converter
The 1EDN7511BXUSA1's 4 A source / 8 A sink drive and ±5 ns matched propagation delay make it an excellent low-side switch driver in high-frequency synchronous buck converters. In a typical 12 V-to-1 V buck running at 1 MHz, the driver rapidly charges and discharges the low-side MOSFET gate (typically 5-15 nC Qg) within nanoseconds, minimizing switching losses that would otherwise dominate efficiency at high frequency. Its sub-10 ns rise/fall into a 1 nF load per Infineon's product brief keeps the MOSFET in the linear region for only picoseconds, directly improving overall system efficiency above 95%. The SOT-23-6 footprint enables compact point-of-load designs on space-constrained motherboards.
Recomendado
GaN-Based 48 V Bus Converter (Server / Data Center)
For GaN-based 48 V bus converters in server and data-center power-delivery networks, the 1EDN7511BXUSA1's 8 A sink current and ultra-fast switching capability are critical. GaN FETs have very low gate charge (typically 1-5 nC) but require very high dV/dt transients that expose gate drivers to Miller-induced negative voltage spikes. The driver's rugged complementary output stage handles these transients per Infineon's product page, while the matched ±5 ns propagation delay ensures precise timing in half-bridge topologies. A 2-5 ohm gate-source resistor is recommended to dampen ringing. The SOT-23-6 footprint allows the driver to be placed within 5 mm of the GaN switch, minimizing parasitic gate-loop inductance.
Recomendado
Class-D Audio Amplifier Output Stage
In Class-D audio amplifier output stages, the 1EDN7511BXUSA1 drives the low-side MOSFET of the half-bridge PWM output. Audio Class-D amplifiers switch at 250 kHz to 1 MHz and require low propagation delay to minimize dead-time distortion that would degrade THD+N. Per the Infineon product brief, the driver's ±5 ns matched delay and true rail-to-rail output maintain symmetric dead-time regardless of duty cycle, supporting THD+N below 0.01%. The SOT-23-6 small footprint also enables compact amplifier modules where multiple driver channels must fit on a small PCB.
Recomendado
Synchronous Rectifier Driver in Telecom Brick Converter
The 1EDN7511BXUSA1 drives the synchronous rectifier MOSFET in isolated telecom brick DC-DC converters (e.g., 48 V to 12 V, 48 V to 5 V). Its 8 A sink current rapidly discharges the SR MOSFET gate to minimize body-diode conduction, improving efficiency by 1-2% compared to passive rectification. The driver's TTL/CMOS-compatible inputs accept logic-level signals directly from the secondary-side SR controller, simplifying the SR timing circuit. Wide operating temperature range (-40 C to +150 C) supports the harsh thermal environment inside sealed telecom bricks.
Recomendado
Solar Micro-Inverter Power Stage
In solar micro-inverter designs converting per-panel DC (typically 25-40 V) to AC grid power, the 1EDN7511BXUSA1 drives the low-side switch of the high-frequency inversion stage. The driver's 4 A source capability easily handles the gate charge of 100-200 V MOSFETs at switching frequencies of 50-100 kHz. The wide input voltage range and -40 C to +150 C operating temperature support outdoor solar installations where ambient temperatures can exceed 70 C in direct sun. The SOT-23-6 miniature footprint fits inside the compact micro-inverter housing mandated for residential PV installations.
Recomendado
USB-PD Adapter Power Stage
In USB Power Delivery (USB-PD) adapters that negotiate 5 V to 20 V output at up to 100 W, the 1EDN7511BXUSA1 drives the synchronous rectifier MOSFET in the secondary-side rectification stage. Modern USB-PD adapters use quasi-resonant flyback or active-clamp topologies switching at 100-200 kHz, where the driver's ±5 ns matched delay and 8 A sink current minimize SR body-diode conduction and improve adapter efficiency above 93%. The SOT-23-6 footprint fits easily alongside the SR controller IC in the densely-packed adapter PCB typical of GaN-based 65 W and 100 W USB-PD designs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para 1EDN7511BXUSA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | 1EDN7512GXTMA1 | 1EDN7550BXTSA1 | 2EDN7533BXTSA1 | 2EDN7533RXTMA1 | 2EDN7534RXTMA1 | 2EDN8523RXTMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-2 | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Driver Type | Low-side, single channel | Low-side, single channel | Low-side, single channel | Low-side, dual channel | Low-side, dual channel | Low-side, dual channel | Low-side, dual channel |
| Operating Temperature Range | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Principais diferenciais
- Industry-standard SOT-23-6 pinout enabling drop-in replacement (vs Texas Instruments UCC27614 (SON-6 / WSON-6))
- Asymmetrical source/sink current optimized for GaN and MOSFET switching (vs Texas Instruments UCC27517 (1.8 A/2.5 A low-side driver))
- Higher peak source current option in same footprint (vs Infineon 1EDN7512GXTMA1 (5 A/9 A))
Notas de projeto
Place a 100 nF ceramic bypass capacitor as close as possible to the VCC pin (Pin 1) and GND (Pin 4) to provide a low-inductance supply loop. For high-frequency switching above 500 kHz, add a bulk 1-10 uF capacitor on the VCC rail near the driver. Keep the gate-drive loop area (OUT pin → gate → source → GND → back to driver GND) minimal - aim for loop area below 5 mm² to avoid parasitic inductance that causes gate-voltage ringing and overshoot. The PG-SOT23-6-2 thermal pad should be soldered to a small copper pour to aid heat spreading.
Do not leave the IN+ or IN- input floating - both inputs must be driven to a defined logic state (tie unused input to VCC or GND per the datasheet truth table) to prevent the output stage from going into a half-on state that would cause shoot-through. For GaN switches, add a 2-5 ohm gate-source resistor to dampen the very high dV/dt this driver can produce and protect the gate from over-voltage transients. Avoid long PCB traces between the driver OUT pin and the MOSFET gate - every 10 mm of trace adds approximately 10 nH of parasitic inductance.
When driving GaN FETs, the 1EDN7511BXUSA1's high dV/dt (>50 V/ns) can inject common-mode current into the input logic traces via the driver's input-to-output capacitance. To prevent logic-side noise, add a small ferrite bead or 10-100 ohm resistor in series with the IN pin, and keep the input traces short and away from the OUT trace. If using both IN+ and IN- for differential drive, ensure the input traces are routed as a tightly-coupled differential pair. For Miller-plateau-induced negative transients at the switch node, a -2 V gate-source TVS or Schottky clamp may be required when driving very fast GaN switches.
Informações de conformidade
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose automotive-grade gate driver variant if required.
