IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRLR120NTRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.85 | $0,85 |
| 10 | $0.72 | $7,20 |
| 100 | $0.55 | $55,00 |
| 500 | $0.42 | $210,00 |
| 1.000 | $0.34 | $340,00 |
| 3.000 | $0.27 | $810,00 |
IRLR120NTRPBF Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. N-channel MOSFETs are the dominant choice for low-side switching and buck topologies because their lower on-resistance per silicon area translates directly into lower conduction loss and higher efficiency. The HEXFET family sits within the broader power MOSFET taxonomy (planar N-channel -> trench N-channel -> super-junction), and the TO-252 (DPAK) package family is the de-facto standard for sub-50 W surface-mount switching designs.
Key features of the IRLR120NTRPBF include a logic-level-compatible gate threshold (fully enhanced at VGS = 5 V), 185 mΩ maximum Rds(on) at VGS = 10 V, fully avalanche-rated energy, fast switching speed, lead-free and RoHS-compliant termination, and a straight-lead surface-mount body. The DPAK tab doubles as the drain terminal, providing a low thermal resistance path (~50 °C/W junction-to-case) to a copper landing pad.
The die uses Infineon's fifth-generation HEXFET planar process, which optimises cell pitch to minimise specific on-resistance while retaining rugged avalanche capability. The device is fully avalanche-rated, meaning the body diode can absorb unclamped inductive turn-off energy without destruction - critical for motor, solenoid, and relay drive applications where stored magnetic energy must be dissipated safely.
Typical applications include DC-DC buck converters, low-side load switches, motor and solenoid drivers, LED backlight drivers, relay replacement circuits, and battery protection / power path OR-ing in 12 V and 24 V systems. The 100 V rating also provides comfortable margin for 24 V industrial buses and telecom -48 V negative-rail return paths.
Design consideration: a 10 kΩ gate pull-down resistor is recommended to prevent unintended turn-on from dV/dt induced Miller coupling when the device is used in high-side or half-bridge configurations. Keep the gate drive loop compact to minimise ringing.
This page consolidates distributor pricing, pin-compatible alternatives in the same DPAK footprint, and design notes specific to the IRLR120NTRPBF that are not found in the manufacturer datasheet alone.
Alternativas drop-in para IRLR120NTRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRLR120NTRPBF (mesmo formato e footprint) — diferindo em Package, Technology, Total Gate Charge (Qg), MSL Level, Operating Temperature Range.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRLR120NTRHR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR120NTRPBF
✅ Drop-In✓ Em estoque
$0.26 / unidade
Ver ficha técnica →IRFR220NTRPBF
✅ Drop-In✓ Em estoque
$0.22 / unidade
Ver ficha técnica →IRFR220NTRLPBF
✅ Drop-In✓ Em estoque
$0.22 / unidade
Ver ficha técnica →IRFR220NPBF
✅ Drop-In✓ Em estoque
$0.74 / unidade
Ver ficha técnica →IRFU5305PBF
✅ Drop-In✓ Em estoque
$0.68 / unidade
Ver ficha técnica →IRLR120NTRPBF Classificações máximas e características elétricas
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (Fifth Generation, planar) |
| Drain-to-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 10 A |
| Rds(on) Max at Vgs=10V | 185 mΩ |
| Total Gate Charge (Qg) | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | 48 W |
| Faixa de temperatura de operação | -55C to +175C (junction) |
| Encapsulamento | TO-252AA (DPAK), 3-pin surface mount |
| Tipo de montagem | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) |
| Nível MSL | 1 |
Configuração de pinos do IRLR120NTRPBF
| Pino 1 | Gate (G) — Gate input; drive 0-10 V to control drain-source conduction |
| Pino 2 | Drain (D) — Drain terminal; also connected internally to the rear heat-sink tab |
| Pino 3 | Source (S) — Source terminal; reference for gate drive and load return |
Área de Operação Segura (DC, Tc=25C)
Aplicações típicas
IRLR120NTRPBF é adequado para 7 aplicaçãos: Low-Side Load Switch (12-24 V Systems), Brushed DC Motor Driver (Low-Side PWM), Solenoid and Relay Driver, Synchronous Rectifier (Secondary Side, <5 A), Battery Protection and Power-Path OR-ing, LED Backlight and Indicator Driver (Low-Side), Telecom -48 V Hot-Swap / Return-Path Switch.
Low-Side Load Switch (12-24 V Systems)
The IRLR120NTRPBF suits low-side load switching in 12 V automotive and 24 V industrial systems because of its 100 V Vdss (providing 4x margin over the bus) and 185 mΩ Rds(on) keeping conduction loss below 200 mW at 1 A loads. Placed between load ground and circuit ground, it is driven directly by a 5 V GPIO or gate-driver IC. Compared to a bipolar transistor switch, the IRLR120NTRPBF adds no base-drive current and dissipates substantially less heat.
Recomendado
Brushed DC Motor Driver (Low-Side PWM)
The IRLR120NTRPBF drives small brushed DC motors up to about 5 A continuous via low-side PWM at frequencies from 1 kHz to 25 kHz. The 13.3 nC total gate charge allows the gate driver to switch the device fully within ~50 ns, minimising dead-time losses. The fully-rated avalanche body diode absorbs stored motor inductance at turn-off, making external flyback diodes optional in non-safety applications.
Recomendado
Solenoid and Relay Driver
The IRLR120NTRPBF drives 12 V and 24 V solenoids and relays in industrial control panels where its 100 V Vdss withstands the inductive kickback when the magnetic field collapses. The avalanche-rated body diode is explicitly designed for unclamped inductive turn-off, absorbing the energy in the part itself and eliminating the need for an external flyback diode in many low-energy cases.
Recomendado
Synchronous Rectifier (Secondary Side, <5 A)
In isolated flyback or forward converters up to 100 V secondary, the IRLR120NTRPBF can serve as a synchronous rectifier, replacing a Schottky diode to reduce conduction loss. Its 185 mΩ Rds(on) yields lower drop than most 100 V Schottky diodes at >3 A load, improving converter efficiency by 2-4 percentage points. Drive from the secondary-side controller via a gate-drive transformer or bootstrap.
Recomendado
Battery Protection and Power-Path OR-ing
The IRLR120NTRPBF is used in 12 V lead-acid battery disconnect circuits and dual-source power-rail OR-ing where its low Rds(on) minimises voltage drop and its 100 V Vdss comfortably exceeds jump-start and load-dump transients. Place two IRLR120NTRPBF back-to-back (sources common) for bidirectional blocking, or use a single device as a low-side disconnect switch controlled by a battery monitoring MCU.
Recomendado
LED Backlight and Indicator Driver (Low-Side)
The IRLR120NTRPBF PWM-drives LED strings from 12 V to 48 V supplies where its 100 V Vdss provides safe margin over the rail and its 10 A capability supports high-brightness LED bars and panel backlights. Driving the gate at 1 kHz PWM gives 1000:1 dimming range while the 13.3 nC Qg allows the gate driver to operate at low quiescent current.
Recomendado
Telecom -48 V Hot-Swap / Return-Path Switch
In telecom negative-rail returns, the IRLR120NTRPBF is used as a low-side return-path switch or hot-swap controller. Its 100 V Vdss exceeds the -48 V bus by 2x, and the 10 A continuous current supports typical 200-300 W power-shelf return currents when paralleled with one or two additional devices. Use a gate-source Zener to limit transient gate stress.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRLR120NTRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRLR120NTRHR | IRFR120NTRPBF | IRFR220NTRPBF | IRFU5305PBF |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK) - through-hole-style DPAK variant |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vdss (V) | 100 | 100 | 100 | 200 | -55 (P-channel) |
| Continuous Id (A) at Tc=25C | 10 | 10 | 9.7 | 5 | -31 (P-channel) |
| Rds(on) max (mΩ) at Vgs=10V | 185 | 185 | 270 | 600 | 110 (P-channel, Vgs=-10V) |
| Lead-Free / RoHS | Yes (PBF) | Yes (HR is lead-free) | Yes (PBF) | Yes (PBF) | Yes (PBF) |
Principais diferenciais
- Fully avalanche-rated body diode for unclamped inductive switching (vs IRFR120NTRPBF)
- Logic-level-compatible gate drive at 5 V Vgs with 185 mΩ Rds(on) (vs IRFR220NTRPBF)
- Fifth-generation HEXFET process optimised for ruggedness over raw Rds(on) (vs Modern trench N-channel MOSFETs in DPAK)
Notas de projeto
Estimated: at VIN=24 V, Id=2 A, switching duty 50%, conduction loss ≈ Id² × Rds(on) = 2² × 0.185 = 0.74 W. With DPAK mounted on 1 oz copper ~50x50 mm on FR4, theta_JA ≈ 50 C/W, giving a junction temperature rise of ~37 C above ambient. Below 1.5 A continuous in still air the part runs cool without a heatsink; above that, add a copper land area of at least 100 mm² or an external thermal pad. The DPAK tab must be soldered (not glued) to the copper pour for both thermal and electrical connection.
Use a single, uninterrupted copper landing pad under the DPAK tab to minimise thermal resistance and provide a low-inductance drain connection. Route the gate trace away from the switching drain node; place a 10 kΩ gate pull-down resistor between gate and source to prevent false turn-on from Miller coupling in half-bridge configurations. Place the gate driver within 5 mm of the gate pin to keep the gate-drive loop inductance below 10 nH.
Common pitfalls with the IRLR120NTRPBF: (1) exceeding the 100 V Vdss rating during inductive switching - always add a TVS or flyback diode for inductive loads >1 A. (2) Driving the gate with insufficient voltage - Vgs(th) is typically 1-2 V, but full enhancement requires Vgs ≥ 10 V; at 5 V Vgs the Rds(on) doubles. (3) Forgetting the body-diode reverse recovery - the IRLR120NTRPBF body diode is slow; in bridge topologies add anti-parallel Schottky or use a co-pack device.
Keep the high-current drain loop (drain tab -> load -> source) physically small to minimise parasitic inductance that causes Vds overshoot during turn-off. Place the gate-bypass resistor (typically 10 Ω to 100 Ω) close to the gate pin to damp gate ringing. If switching at >100 kHz, use a four-layer PCB with a dedicated ground plane directly under the DPAK landing pad.
Informações de conformidade
RoHS compliant (PBF suffix). Not AEC-Q100 qualified - not recommended for automotive safety-critical applications. Halogen-free status not explicitly stated in provided data.
