IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
MPN: IRLR120NTRPBF ✓ Hoạt độngIRLR120NTRPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. N-channel MOSFETs are the dominant choice for low-side switching and buck topologies because their lower on-resistance per silicon area translates directly into lower conduction loss and higher efficiency. The HEXFET family sits within the broader power MOSFET taxonomy (planar N-channel -> trench N-channel -> super-junction), and the TO-252 (DPAK) package family is the de-facto standard for sub-50 W surface-mount switching designs.
Key features of the IRLR120NTRPBF include a logic-level-compatible gate threshold (fully enhanced at VGS = 5 V), 185 mΩ maximum Rds(on) at VGS = 10 V, fully avalanche-rated energy, fast switching speed, lead-free and RoHS-compliant termination, and a straight-lead surface-mount body. The DPAK tab doubles as the drain terminal, providing a low thermal resistance path (~50 °C/W junction-to-case) to a copper landing pad.
The die uses Infineon's fifth-generation HEXFET planar process, which optimises cell pitch to minimise specific on-resistance while retaining rugged avalanche capability. The device is fully avalanche-rated, meaning the body diode can absorb unclamped inductive turn-off energy without destruction - critical for motor, solenoid, and relay drive applications where stored magnetic energy must be dissipated safely.
Typical applications include DC-DC buck converters, low-side load switches, motor and solenoid drivers, LED backlight drivers, relay replacement circuits, and battery protection / power path OR-ing in 12 V and 24 V systems. The 100 V rating also provides comfortable margin for 24 V industrial buses and telecom -48 V negative-rail return paths.
Design consideration: a 10 kΩ gate pull-down resistor is recommended to prevent unintended turn-on from dV/dt induced Miller coupling when the device is used in high-side or half-bridge configurations. Keep the gate drive loop compact to minimise ringing.
This page consolidates distributor pricing, pin-compatible alternatives in the same DPAK footprint, and design notes specific to the IRLR120NTRPBF that are not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IRLR120NTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLR120NTRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Total Gate Charge (Qg), MSL Level, Operating Temperature Range.
IRLR120NTRHR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR120NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR220NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR220NTRLPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR220NPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFU5305PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR120NTRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (Fifth Generation, planar) |
| Drain-to-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 10 A |
| Rds(on) Max at Vgs=10V | 185 mΩ |
| Total Gate Charge (Qg) | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | 48 W |
| Khoảng nhiệt độ hoạt động | -55C to +175C (junction) |
| Hộp | TO-252AA (DPAK), 3-pin surface mount |
| Kiểu lắp đặt | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) |
| Cấp MSL | 1 |
Cấu hình chân IRLR120NTRPBF
| Chân 1 | Gate (G) — Gate input; drive 0-10 V to control drain-source conduction |
| Chân 2 | Drain (D) — Drain terminal; also connected internally to the rear heat-sink tab |
| Chân 3 | Source (S) — Source terminal; reference for gate drive and load return |
Khu vực hoạt động an toàn (DC, Tc=25C)
Ứng dụng tiêu biểu
IRLR120NTRPBF phù hợp cho 7 Áp dụngs: Low-Side Load Switch (12-24 V Systems), Brushed DC Motor Driver (Low-Side PWM), Solenoid and Relay Driver, Synchronous Rectifier (Secondary Side, <5 A), Battery Protection and Power-Path OR-ing, LED Backlight and Indicator Driver (Low-Side), Telecom -48 V Hot-Swap / Return-Path Switch.
Low-Side Load Switch (12-24 V Systems)
The IRLR120NTRPBF suits low-side load switching in 12 V automotive and 24 V industrial systems because of its 100 V Vdss (providing 4x margin over the bus) and 185 mΩ Rds(on) keeping conduction loss below 200 mW at 1 A loads. Placed between load ground and circuit ground, it is driven directly by a 5 V GPIO or gate-driver IC. Compared to a bipolar transistor switch, the IRLR120NTRPBF adds no base-drive current and dissipates substantially less heat.
Được đề xuất
Brushed DC Motor Driver (Low-Side PWM)
The IRLR120NTRPBF drives small brushed DC motors up to about 5 A continuous via low-side PWM at frequencies from 1 kHz to 25 kHz. The 13.3 nC total gate charge allows the gate driver to switch the device fully within ~50 ns, minimising dead-time losses. The fully-rated avalanche body diode absorbs stored motor inductance at turn-off, making external flyback diodes optional in non-safety applications.
Được đề xuất
Solenoid and Relay Driver
The IRLR120NTRPBF drives 12 V and 24 V solenoids and relays in industrial control panels where its 100 V Vdss withstands the inductive kickback when the magnetic field collapses. The avalanche-rated body diode is explicitly designed for unclamped inductive turn-off, absorbing the energy in the part itself and eliminating the need for an external flyback diode in many low-energy cases.
Được đề xuất
Synchronous Rectifier (Secondary Side, <5 A)
In isolated flyback or forward converters up to 100 V secondary, the IRLR120NTRPBF can serve as a synchronous rectifier, replacing a Schottky diode to reduce conduction loss. Its 185 mΩ Rds(on) yields lower drop than most 100 V Schottky diodes at >3 A load, improving converter efficiency by 2-4 percentage points. Drive from the secondary-side controller via a gate-drive transformer or bootstrap.
Được đề xuất
Battery Protection and Power-Path OR-ing
The IRLR120NTRPBF is used in 12 V lead-acid battery disconnect circuits and dual-source power-rail OR-ing where its low Rds(on) minimises voltage drop and its 100 V Vdss comfortably exceeds jump-start and load-dump transients. Place two IRLR120NTRPBF back-to-back (sources common) for bidirectional blocking, or use a single device as a low-side disconnect switch controlled by a battery monitoring MCU.
Được đề xuất
LED Backlight and Indicator Driver (Low-Side)
The IRLR120NTRPBF PWM-drives LED strings from 12 V to 48 V supplies where its 100 V Vdss provides safe margin over the rail and its 10 A capability supports high-brightness LED bars and panel backlights. Driving the gate at 1 kHz PWM gives 1000:1 dimming range while the 13.3 nC Qg allows the gate driver to operate at low quiescent current.
Được đề xuất
Telecom -48 V Hot-Swap / Return-Path Switch
In telecom negative-rail returns, the IRLR120NTRPBF is used as a low-side return-path switch or hot-swap controller. Its 100 V Vdss exceeds the -48 V bus by 2x, and the 10 A continuous current supports typical 200-300 W power-shelf return currents when paralleled with one or two additional devices. Use a gate-source Zener to limit transient gate stress.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLR120NTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLR120NTRHR | IRFR120NTRPBF | IRFR220NTRPBF | IRFU5305PBF |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK) - through-hole-style DPAK variant |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vdss (V) | 100 | 100 | 100 | 200 | -55 (P-channel) |
| Continuous Id (A) at Tc=25C | 10 | 10 | 9.7 | 5 | -31 (P-channel) |
| Rds(on) max (mΩ) at Vgs=10V | 185 | 185 | 270 | 600 | 110 (P-channel, Vgs=-10V) |
| Lead-Free / RoHS | Yes (PBF) | Yes (HR is lead-free) | Yes (PBF) | Yes (PBF) | Yes (PBF) |
Bảo phân biệt quan trọng
- Fully avalanche-rated body diode for unclamped inductive switching (vsIRFR120NTRPBF)
- Logic-level-compatible gate drive at 5 V Vgs with 185 mΩ Rds(on) (vsIRFR220NTRPBF)
- Fifth-generation HEXFET process optimised for ruggedness over raw Rds(on) (vsModern trench N-channel MOSFETs in DPAK)
Ghi chú thiết kế
Estimated: at VIN=24 V, Id=2 A, switching duty 50%, conduction loss ≈ Id² × Rds(on) = 2² × 0.185 = 0.74 W. With DPAK mounted on 1 oz copper ~50x50 mm on FR4, theta_JA ≈ 50 C/W, giving a junction temperature rise of ~37 C above ambient. Below 1.5 A continuous in still air the part runs cool without a heatsink; above that, add a copper land area of at least 100 mm² or an external thermal pad. The DPAK tab must be soldered (not glued) to the copper pour for both thermal and electrical connection.
Use a single, uninterrupted copper landing pad under the DPAK tab to minimise thermal resistance and provide a low-inductance drain connection. Route the gate trace away from the switching drain node; place a 10 kΩ gate pull-down resistor between gate and source to prevent false turn-on from Miller coupling in half-bridge configurations. Place the gate driver within 5 mm of the gate pin to keep the gate-drive loop inductance below 10 nH.
Common pitfalls with the IRLR120NTRPBF: (1) exceeding the 100 V Vdss rating during inductive switching - always add a TVS or flyback diode for inductive loads >1 A. (2) Driving the gate with insufficient voltage - Vgs(th) is typically 1-2 V, but full enhancement requires Vgs ≥ 10 V; at 5 V Vgs the Rds(on) doubles. (3) Forgetting the body-diode reverse recovery - the IRLR120NTRPBF body diode is slow; in bridge topologies add anti-parallel Schottky or use a co-pack device.
Keep the high-current drain loop (drain tab -> load -> source) physically small to minimise parasitic inductance that causes Vds overshoot during turn-off. Place the gate-bypass resistor (typically 10 Ω to 100 Ω) close to the gate pin to damp gate ringing. If switching at >100 kHz, use a four-layer PCB with a dedicated ground plane directly under the DPAK landing pad.
Thông tin tuân thủ
RoHS compliant (PBF suffix). Not AEC-Q100 qualified - not recommended for automotive safety-critical applications. Halogen-free status not explicitly stated in provided data.
