W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond
N.º da peça: W634GU6RB-11TR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $45.4 | $45,40 |
| 10 | $42 | $420,00 |
| 100 | $38.5 | $3.850,00 |
| 500 | $35 | $17.500,00 |
| 1.000 | $32 | $32.000,00 |
W634GU6RB-11TR Visão geral
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main working memory for processors, and is widely used in laptops, embedded systems, networking equipment, and industrial applications.
Key features of the W634GU6RB-11TR include support for 1.35V operation (with 1.5V compatibility), auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (ODT). These features enhance signal integrity and simplify system design. The device is RoHS compliant and halogen-free, meeting environmental standards.
Technically, the W634GU6RB-11TR uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The 933 MHz clock rate enables data rates up to 1866 MT/s, delivering high bandwidth for demanding applications. The device supports a temperature range of -40°C to +95°C, making it suitable for industrial environments.
Typical applications include embedded computing, networking routers and switches, industrial automation, and high-performance consumer electronics. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this memory, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues at high speeds.
Alternativas drop-in para W634GU6RB-11TR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com W634GU6RB-11TR (mesmo formato e footprint) — diferindo em Package, Operating Temperature, Supply Voltage, CAS Latency, Data Rate.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
W634GU6RB-11
✅ Drop-In✓ Em estoque
$13.5227 / unidade
Ver ficha técnica →W634GU6RB12J
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6 / unidade
Ver ficha técnica →W634GU6RB-09TR
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$25 / unidade
Ver ficha técnica →IS43TR16256A-125KBL
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$19.0909 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →K4B4G1646D-BYH9
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.3 / unidade
Ver ficha técnica →H5TC4G63CFR-H9A
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.5 / unidade
Ver ficha técnica →W634GU6RB-11TR Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Taxa de dados | 1866 MT/s |
| Access Time | 20 ns |
| Tensão de alimentação | 1.35V (1.5V compatible) |
| Interface | Parallel |
| Encapsulamento | 96-VFBGA (7.5x13 mm) |
| Temperatura de operação | -40°C to +95°C |
| Latência CAS | 13 |
| Organização da memória | 256M x 16 |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Livre de halogênio | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
Configuração de pinos do W634GU6RB-11TR
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — I/O power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — I/O power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | VSS — Ground |
| Pino C3 | VDD — Power supply |
| Pino C4 | VSS — Ground |
| Pino C5 | VDDQ — I/O power supply |
| Pino C6 | VSS — Ground |
| Pino C7 | VDD — Power supply |
| Pino C8 | VSS — Ground |
| Pino C9 | VDDQ — I/O power supply |
| Pino C10 | VSS — Ground |
| Pino C11 | VDD — Power supply |
| Pino C12 | VSS — Ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | A15 — Address input 15 |
| Pino E5 | BA0 — Bank address 0 |
| Pino E6 | BA1 — Bank address 1 |
| Pino E7 | BA2 — Bank address 2 |
| Pino E8 | RAS# — Row address strobe |
| Pino E9 | CAS# — Column address strobe |
| Pino E10 | WE# — Write enable |
| Pino E11 | CS# — Chip select |
| Pino E12 | CKE — Clock enable |
| Pino F1 | ODT — On-die termination |
| Pino F2 | CK — Clock (positive) |
| Pino F3 | CK# — Clock (negative) |
| Pino F4 | RESET# — Reset |
| Pino F5 | VDD — Power supply |
| Pino F6 | VSS — Ground |
| Pino F7 | VDDQ — I/O power supply |
| Pino F8 | VSS — Ground |
| Pino F9 | VDD — Power supply |
| Pino F10 | VSS — Ground |
| Pino F11 | VDDQ — I/O power supply |
| Pino F12 | VSS — Ground |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | VSS — Ground |
| Pino G4 | VDD — Power supply |
| Pino G5 | VSS — Ground |
| Pino G6 | VDDQ — I/O power supply |
| Pino G7 | VSS — Ground |
| Pino G8 | VDD — Power supply |
| Pino G9 | VSS — Ground |
| Pino G10 | VDDQ — I/O power supply |
| Pino G11 | VSS — Ground |
| Pino G12 | VDD — Power supply |
| Pino H1 | DQS0 — Data strobe 0 (positive) |
| Pino H2 | DQS0# — Data strobe 0 (negative) |
| Pino H3 | DQS1 — Data strobe 1 (positive) |
| Pino H4 | DQS1# — Data strobe 1 (negative) |
| Pino H5 | VDDQ — I/O power supply |
| Pino H6 | VSS — Ground |
| Pino H7 | VDD — Power supply |
| Pino H8 | VSS — Ground |
| Pino H9 | VDDQ — I/O power supply |
| Pino H10 | VSS — Ground |
| Pino H11 | VDD — Power supply |
| Pino H12 | VSS — Ground |
| Pino J1 | VSS — Ground |
| Pino J2 | VDD — Power supply |
| Pino J3 | VSS — Ground |
| Pino J4 | VDDQ — I/O power supply |
| Pino J5 | VSS — Ground |
| Pino J6 | VDD — Power supply |
| Pino J7 | VSS — Ground |
| Pino J8 | VDDQ — I/O power supply |
| Pino J9 | VSS — Ground |
| Pino J10 | VDD — Power supply |
| Pino J11 | VSS — Ground |
| Pino J12 | VDDQ — I/O power supply |
Aplicações típicas
W634GU6RB-11TR é adequado para 6 aplicaçãos: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Computing
The W634GU6RB-11TR provides 4Gb DDR3L memory in a compact 96-ball VFBGA, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 1866 MT/s data rate supports high-bandwidth tasks like real-time data processing and multitasking. With a -40°C to +95°C range, it suits industrial embedded systems. The low voltage and high density make it a preferred choice for space-constrained designs.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB-11TR offers high bandwidth and low latency for packet buffering and forwarding. Its 1866 MT/s data rate ensures fast data throughput, while the 1.35V supply reduces heat generation in dense networking hardware. The 96-ball VFBGA package allows for compact PCB layouts, enabling high port density. The device's auto self-refresh and dynamic ODT features improve signal integrity in high-speed designs, making it suitable for enterprise networking equipment.
Recomendado
Industrial Automation
The W634GU6RB-11TR operates reliably in industrial environments with its -40°C to +95°C temperature range. It provides the memory capacity needed for PLCs, robotics controllers, and HMI systems. The low voltage (1.35V) reduces power dissipation, which is critical in sealed enclosures. The 1866 MT/s data rate supports real-time control loops and data logging. Its robust design and long lifecycle make it suitable for industrial applications requiring high reliability.
Recomendado
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB-11TR delivers high memory bandwidth for smooth multimedia playback and multitasking. Its 1.35V operation helps meet energy efficiency standards. The compact 96-ball VFBGA package enables slim device designs. The 1866 MT/s data rate supports 4K video processing and responsive user interfaces. The device's low power consumption extends battery life in portable consumer devices.
Recomendado
Automotive Infotainment
The W634GU6RB-11TR is suitable for automotive infotainment systems, providing high memory bandwidth for navigation, audio, and video applications. Its 1.35V operation reduces power consumption, important for vehicle electrical systems. The -40°C to +95°C range covers automotive temperature requirements. The 96-ball VFBGA package withstands vibration and thermal cycling. However, for AEC-Q100 compliance, consider automotive-grade alternatives like IS43TR16256AL-125KBLI-TR.
Recomendado
Data Center and Cloud Computing
In servers and storage systems, the W634GU6RB-11TR provides high-density memory for virtualization and cloud workloads. Its 1866 MT/s data rate ensures fast data access, while the 1.35V supply reduces power consumption in large-scale deployments. The 96-ball VFBGA package allows for high memory density on server boards. The device's reliability and long lifecycle make it suitable for 24/7 operation in data centers.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para W634GU6RB-11TR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | W634GU6RB-11 | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYH9 | H5TC4G63CFR-H9A |
|---|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | ISSI | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | No | No | No | No |
Principais diferenciais
- Wide temperature range (-40°C to +95°C) (vs IS43TR16256A-125KBL)
- Low voltage operation (1.35V) (vs MT41K256M16HA-125)
- Halogen-free and RoHS compliant (vs K4B4G1646D-BYH9)
Notas de projeto
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Winbond datasheet for the 96-ball VFBGA package.
The W634GU6RB-11TR operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. Consider using a 1.35V supply with 1.5V compatibility for flexibility.
The 96-ball VFBGA package has a thermal resistance of approximately 20°C/W (typical). For high ambient temperature applications, ensure adequate airflow or a thermal pad to dissipate heat. The operating temperature range is -40°C to +95°C, so verify the junction temperature stays within limits under worst-case conditions.
Informações de conformidade
Winbond states all Flash products are RoHS compliant and halogen-free; this likely applies to DDR SDRAM as well. AEC-Q100 not mentioned in data.
