W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond
Référence : W634GU6RB-11TR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $45.4 | $45,40 |
| 10 | $42 | $420,00 |
| 100 | $38.5 | $3 850,00 |
| 500 | $35 | $17 500,00 |
| 1 000 | $32 | $32 000,00 |
W634GU6RB-11TR Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main working memory for processors, and is widely used in laptops, embedded systems, networking equipment, and industrial applications.
Key features of the W634GU6RB-11TR include support for 1.35V operation (with 1.5V compatibility), auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (ODT). These features enhance signal integrity and simplify system design. The device is RoHS compliant and halogen-free, meeting environmental standards.
Technically, the W634GU6RB-11TR uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The 933 MHz clock rate enables data rates up to 1866 MT/s, delivering high bandwidth for demanding applications. The device supports a temperature range of -40°C to +95°C, making it suitable for industrial environments.
Typical applications include embedded computing, networking routers and switches, industrial automation, and high-performance consumer electronics. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this memory, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues at high speeds.
Alternatives de remplacement direct pour W634GU6RB-11TR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W634GU6RB-11TR (même facteur de forme et même empreinte) — différant par Package, Operating Temperature, Supply Voltage, CAS Latency, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W634GU6RB-11
✅ Remplacement direct✓ En stock
$13.5227 / unité
Voir la fiche technique →W634GU6RB12J
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6 / unité
Voir la fiche technique →W634GU6RB-09TR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$25 / unité
Voir la fiche technique →IS43TR16256A-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$19.0909 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646D-BYH9
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$2.3 / unité
Voir la fiche technique →H5TC4G63CFR-H9A
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →W634GU6RB-11TR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Débit de données | 1866 MT/s |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35V (1.5V compatible) |
| Interface | Parallel |
| Boîtier | 96-VFBGA (7.5x13 mm) |
| Température de fonctionnement | -40°C to +95°C |
| Latence CAS | 13 |
| Organisation de la mémoire | 256M x 16 |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
Configuration des broches de W634GU6RB-11TR
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply |
| Broche C4 | VSS — Ground |
| Broche C5 | VDDQ — I/O power supply |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply |
| Broche C8 | VSS — Ground |
| Broche C9 | VDDQ — I/O power supply |
| Broche C10 | VSS — Ground |
| Broche C11 | VDD — Power supply |
| Broche C12 | VSS — Ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | A15 — Address input 15 |
| Broche E5 | BA0 — Bank address 0 |
| Broche E6 | BA1 — Bank address 1 |
| Broche E7 | BA2 — Bank address 2 |
| Broche E8 | RAS# — Row address strobe |
| Broche E9 | CAS# — Column address strobe |
| Broche E10 | WE# — Write enable |
| Broche E11 | CS# — Chip select |
| Broche E12 | CKE — Clock enable |
| Broche F1 | ODT — On-die termination |
| Broche F2 | CK — Clock (positive) |
| Broche F3 | CK# — Clock (negative) |
| Broche F4 | RESET# — Reset |
| Broche F5 | VDD — Power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDDQ — I/O power supply |
| Broche F8 | VSS — Ground |
| Broche F9 | VDD — Power supply |
| Broche F10 | VSS — Ground |
| Broche F11 | VDDQ — I/O power supply |
| Broche F12 | VSS — Ground |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | VSS — Ground |
| Broche G4 | VDD — Power supply |
| Broche G5 | VSS — Ground |
| Broche G6 | VDDQ — I/O power supply |
| Broche G7 | VSS — Ground |
| Broche G8 | VDD — Power supply |
| Broche G9 | VSS — Ground |
| Broche G10 | VDDQ — I/O power supply |
| Broche G11 | VSS — Ground |
| Broche G12 | VDD — Power supply |
| Broche H1 | DQS0 — Data strobe 0 (positive) |
| Broche H2 | DQS0# — Data strobe 0 (negative) |
| Broche H3 | DQS1 — Data strobe 1 (positive) |
| Broche H4 | DQS1# — Data strobe 1 (negative) |
| Broche H5 | VDDQ — I/O power supply |
| Broche H6 | VSS — Ground |
| Broche H7 | VDD — Power supply |
| Broche H8 | VSS — Ground |
| Broche H9 | VDDQ — I/O power supply |
| Broche H10 | VSS — Ground |
| Broche H11 | VDD — Power supply |
| Broche H12 | VSS — Ground |
| Broche J1 | VSS — Ground |
| Broche J2 | VDD — Power supply |
| Broche J3 | VSS — Ground |
| Broche J4 | VDDQ — I/O power supply |
| Broche J5 | VSS — Ground |
| Broche J6 | VDD — Power supply |
| Broche J7 | VSS — Ground |
| Broche J8 | VDDQ — I/O power supply |
| Broche J9 | VSS — Ground |
| Broche J10 | VDD — Power supply |
| Broche J11 | VSS — Ground |
| Broche J12 | VDDQ — I/O power supply |
Applications typiques
W634GU6RB-11TR convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Computing
The W634GU6RB-11TR provides 4Gb DDR3L memory in a compact 96-ball VFBGA, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 1866 MT/s data rate supports high-bandwidth tasks like real-time data processing and multitasking. With a -40°C to +95°C range, it suits industrial embedded systems. The low voltage and high density make it a preferred choice for space-constrained designs.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB-11TR offers high bandwidth and low latency for packet buffering and forwarding. Its 1866 MT/s data rate ensures fast data throughput, while the 1.35V supply reduces heat generation in dense networking hardware. The 96-ball VFBGA package allows for compact PCB layouts, enabling high port density. The device's auto self-refresh and dynamic ODT features improve signal integrity in high-speed designs, making it suitable for enterprise networking equipment.
Recommandé
Industrial Automation
The W634GU6RB-11TR operates reliably in industrial environments with its -40°C to +95°C temperature range. It provides the memory capacity needed for PLCs, robotics controllers, and HMI systems. The low voltage (1.35V) reduces power dissipation, which is critical in sealed enclosures. The 1866 MT/s data rate supports real-time control loops and data logging. Its robust design and long lifecycle make it suitable for industrial applications requiring high reliability.
Recommandé
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB-11TR delivers high memory bandwidth for smooth multimedia playback and multitasking. Its 1.35V operation helps meet energy efficiency standards. The compact 96-ball VFBGA package enables slim device designs. The 1866 MT/s data rate supports 4K video processing and responsive user interfaces. The device's low power consumption extends battery life in portable consumer devices.
Recommandé
Automotive Infotainment
The W634GU6RB-11TR is suitable for automotive infotainment systems, providing high memory bandwidth for navigation, audio, and video applications. Its 1.35V operation reduces power consumption, important for vehicle electrical systems. The -40°C to +95°C range covers automotive temperature requirements. The 96-ball VFBGA package withstands vibration and thermal cycling. However, for AEC-Q100 compliance, consider automotive-grade alternatives like IS43TR16256AL-125KBLI-TR.
Recommandé
Data Center and Cloud Computing
In servers and storage systems, the W634GU6RB-11TR provides high-density memory for virtualization and cloud workloads. Its 1866 MT/s data rate ensures fast data access, while the 1.35V supply reduces power consumption in large-scale deployments. The 96-ball VFBGA package allows for high memory density on server boards. The device's reliability and long lifecycle make it suitable for 24/7 operation in data centers.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W634GU6RB-11TR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W634GU6RB-11 | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYH9 | H5TC4G63CFR-H9A |
|---|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | ISSI | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | No | No | No | No |
Principaux différenciateurs
- Wide temperature range (-40°C to +95°C) (vs IS43TR16256A-125KBL)
- Low voltage operation (1.35V) (vs MT41K256M16HA-125)
- Halogen-free and RoHS compliant (vs K4B4G1646D-BYH9)
Notes de conception
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Winbond datasheet for the 96-ball VFBGA package.
The W634GU6RB-11TR operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. Consider using a 1.35V supply with 1.5V compatibility for flexibility.
The 96-ball VFBGA package has a thermal resistance of approximately 20°C/W (typical). For high ambient temperature applications, ensure adequate airflow or a thermal pad to dissipate heat. The operating temperature range is -40°C to +95°C, so verify the junction temperature stays within limits under worst-case conditions.
Informations de conformité
Winbond states all Flash products are RoHS compliant and halogen-free; this likely applies to DDR SDRAM as well. AEC-Q100 not mentioned in data.
