K4AAG085WA-BCTD - 16Gb DDR4 2666Mbps SDRAM | Samsung
Артикул: K4AAG085WA-BCTD ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $10.18 | $10,18 |
| 10 | $10.18 | $101,80 |
| 100 | $10.18 | $1.018,00 |
| 500 | $10.18 | $5.090,00 |
| 1.000 | $10.18 | $10.180,00 |
K4AAG085WA-BCTD Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of JEDEC-defined DRAM, sitting within the memory hierarchy as volatile main memory for computing systems. Compared with DDR3, DDR4 lowers operating voltage from 1.5V to 1.2V, doubles bank groups, and raises burst length to BL8, delivering higher bandwidth at lower power per transfer.
Key features of the K4AAG085WA-BCTD include its high 16Gb (2 gigabyte) density in a single x8 component, 2666 Mbps/pin data rate, and a 1.2V core supply with DDR4 power-saving features such as a deep power-down mode and per-bank group refresh scheduling. The 78-ball FBGA surface-mount package minimizes board area and shortens signal paths for improved signal integrity at high data rates.
Architecturally, the device uses an 8n prefetch with sixteen logical banks organized into four bank groups, which enables high sustained bandwidth while relaxing timing constraints. Samsung's advanced DRAM process technology provides the bit-cell scaling required to reach 16Gb per die, with internal bank-group interleaving supporting the 2666 Mbps transfer rate within a standard JEDEC DDR4-2666 timing profile.
Typical applications include embedded computing modules, industrial controllers, networking equipment, storage appliances, and firmware/data logging systems where a 16Gb x8 DDR4 component is required. Its 0C to +85C commercial temperature range suits servers, desktops, and industrial environments with controlled ambient conditions.
When designing with this device, memory controller timing must be validated against the JEDEC DDR4-2666 speed bin, and the 78-ball FBGA footprint requires careful length-matched PCB routing on the data, address, and clock nets. Note that the -BCTD speed grade must match the controller's supported speed bins during initialization and training.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для K4AAG085WA-BCTD — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K4AAG085WA-BCTD (тот же форм-фактор и посадочное место) — отличается по Interface, Package, Operating Temperature, Density, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K4AAG085WA-BCRC
✅ Прямая замена✓ В наличии
$6.1 / шт.
Открыть даташит →K4AAG085WA-BCPB
✅ Прямая замена✓ В наличии
$6.92 / шт.
Открыть даташит →K4AAG085WA-BCWE
✅ Прямая замена✓ В наличии
$7.24 / шт.
Открыть даташит →K4AAG085WA-BCTD Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) |
| Организация памяти | 2G x 8 |
| Скорость передачи данных | 2666 Mbps |
| Напряжение питания | 1.2 V |
| Корпус | 78-ball FBGA (78FBGA) |
| Рабочая температура | 0C to +85C |
| Speed Grade | DDR4-2666 (-BCTD) |
| Тип монтажа | Surface Mount |
| Интерфейс | DDR4 parallel, JEDEC DDR4 ballout |
| Статус RoHS | Compliant |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | BL8 (DDR4 standard) |
| Application Domain | Computing, networking, industrial memory |
| Manufacturing Standard | JEDEC DDR4 SDRAM |
Руководство по цоколевке K4AAG085WA-BCTD в корпусе 78-ball fbga (78fbga)
Цоколевка для K4AAG085WA-BCTD (корпус 78-ball fbga (78fbga)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K4AAG085WA-BCTD.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K4AAG085WA-BCTD подходит для 6 применениеs: Embedded Computing Modules, Networking and Communication Equipment, Storage Appliances and SSD Controllers, Industrial Controllers and Automation, Desktop and Entry Server Memory Modules, Firmware Storage Buffers and Data Logging.
Embedded Computing Modules
The K4AAG085WA-BCTD fits embedded computing modules (COMs, SOMs, edge gateways) that require 2 GB of main memory in a single x8 DDR4 component. Its 16Gb density reduces DRAM component count versus 8Gb parts, saving board area on compact modules, while the 2666 Mbps data rate provides sufficient bandwidth for Linux-class processors and SoCs. The 1.2V supply aligns with the low-power targets of battery-backed and passively cooled embedded systems. In a typical layout, the chip sits near the processor with length-matched DDR4 routing on the 78FBGA footprint; the -BCTD DDR4-2666 grade matches common embedded SoC memory controllers, and its 0C to +85C range covers standard embedded operating envelopes with adequate thermal design.
Рекомендуется
Networking and Communication Equipment
Routers, switches, and network appliances use 16Gb x8 DDR4 components like the K4AAG085WA-BCTD for packet buffering, route tables, and control-plane memory. The 2Gx8 organization allows designers to populate 64-bit buses with eight chips (16 GB total) or build narrower redundant banks, and the DDR4-2666 grade supplies roughly 21 GB/s per 64-bit channel of peak bandwidth, sufficient for control planes and deep packet-buffer depth. Samsung's bank-group architecture interleaves refresh so latency stays predictable under load - a benefit for line-card applications. The 78-ball FBGA package enables dense memory layouts on switch motherboards, and the 1.2V rail integrates cleanly with server-style power trees already present in networking hardware.
Рекомендуется
Storage Appliances and SSD Controllers
Enterprise SSD controllers and storage appliances rely on DRAM for firmware execution and FTL (flash translation layer) mapping tables; a 16Gb DDR4 chip such as K4AAG085WA-BCTD provides 2 GB of mapping memory per component. At 2666 Mbps, read/write latency to the mapping table stays within controller timing budgets even for multi-terabyte SSDs, where map tables scale with capacity. The x8 organization matches common SSD controller DDR4 interfaces, and the 78FBGA footprint is standard on SSD reference designs. In production, matching the controller's qualified speed bin (-BCTD at DDR4-2666) ensures power-up training completes reliably across temperature, protecting data integrity on the FTL tables.
Рекомендуется
Industrial Controllers and Automation
Industrial PCs, motion controllers, and factory-automation HMI platforms use K4AAG085WA-BCTD as main memory where 2 GB per chip simplifies BOMs and the 0C to +85C commercial rating suits controlled cabinet environments. The 16Gb density supports modern runtimes and logging buffers in one component, cutting solder joints and failure points versus multi-chip lower-density arrays - a reliability advantage in 24/7 industrial service. The 1.2V DDR4 interface reduces heat inside sealed enclosures compared with DDR3 designs. Designers should ensure ambient temperature at the chip stays within the +85C limit and validate DDR4-2666 training in the SoC's boot firmware, following JEDEC timing tables during initialization.
Рекомендуется
Desktop and Entry Server Memory Modules
The K4AAG085WA-BCTD is a building block for UDIMMs, RDIMMs, and SODIMMs: eight x8 chips form a 64-bit, 16 GB module, and the DDR4-2666 grade matches mainstream desktop and entry-server memory controllers. Its 16Gb die density is what enables high-capacity modules without doubling chip count, directly lowering module cost per gigabyte. The 2Gx8 organization with standard JEDEC DDR4 ballout ensures compatibility with module reference designs from JEDEC and module makers. On the module PCB, the 78FBGA footprint supports both front/back chip placement, and the 1.2V rail keeps module power within DDR4-2666 envelope limits for thermal sensors and power-management ICs to monitor.
Рекомендуется
Firmware Storage Buffers and Data Logging
Systems that boot from NOR/NAND flash but execute from RAM use DDR4 components like K4AAG085WA-BCTD as execution memory and logging buffers; the product overview explicitly targets firmware boot and embedded logging use cases. Copying firmware images from flash into the 2 GB DDR4 space accelerates boot and provides room for ring-buffer logging without SD-card wear. The 2666 Mbps interface minimizes the time to load large firmware images, and x8 organization with on-die DM simplifies byte-wide control. Designers pair the DDR4 with a boot flash and a controller that supports DDR4-2666 initialization; the 0C to +85C range covers standard indoor logging equipment, and deep power-down mode trims standby current in duty-cycled loggers.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K4AAG085WA-BCTD — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K4AAG085WA-BCRC | K4AAG085WA-BCPB | K4AAG085WA-BCWE |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade (suffix) | -BCTD (DDR4-2666) | -BCRC (different JEDEC bin) | -BCPB (different JEDEC bin) | -BCWE (different JEDEC bin) |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Controller Revalidation Needed | Baseline | Yes - speed-bin timing tables | Yes - speed-bin timing tables | Yes - speed-bin timing tables |
Ключевые отличия
- 16Gb single-die density in x8 organization (против K4A8G085WC-BCTD)
- DDR4-2666 speed grade matches mainstream controllers (против K4AAG085WA-BCRC)
- 1.2V DDR4 core voltage (против DDR3-generation parts)
Заметки по проектированию
Route DDR4-2666 signals with length matching per JEDEC DDR4 routing guidelines: data groups (DQ/DQS/DM) matched within tight skew windows and address/command groups referenced to fly-by clock topology. Use the 78FBGA land pattern with solid VDD/VDDQ planes and at least one ground plane adjacent to the memory layer for impedance control. Termination (ODT) is on-die, so series resistors are typically not needed, but verify with signal-integrity simulation at 2666 Mbps. Follow Samsung's datasheet power-up sequence: apply VPP before VDD/VDDQ and hold RESET# low through the initialization period.
Do not treat speed-bin suffixes as interchangeable in firmware. Migrating a design from -BCTD (DDR4-2666) to another suffix such as -BCRC or -BCWE is pin-compatible but changes JEDEC timing parameters; controllers must run memory training with the correct bin, or boot will fail intermittently - a failure mode emphasized in Samsung DDR4 migration guides. Always read the SPD or hard-code the correct timing table in U-Boot/BIOS and re-run read/write margin testing at temperature extremes after any suffix change.
Decouple VDD, VDDQ, and VPP rails with multiple 0.1 uF ceramics placed directly under the 78FBGA footprint plus bulk capacitance (10-22 uF) per chip. DDR4 adds a separate 2.5V VPP rail for the wordline driver; do not tie it to VDD. Estimated steady-state current at DDR4-2666 depends on the JEDEC activity pattern used - consult the Samsung datasheet IDD specification tables and derate for your duty cycle to size the regulator, targeting total memory-rail ripple below datasheet limits.
Информация о соответствии
Kynix listing identifies the FBGA-78 DRAM as ROHS; Samsung current-production DDR4 is lead-free per RoHS directives. Obtain official Samsung environmental certificates for REACH, halogen-free, and conflict-minerals declarations for audit purposes.
