K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung
Артикул: K6F3216U6M-EF70T ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.6 | $3.300,00 |
| 1.000 | $6.1 | $6.100,00 |
K6F3216U6M-EF70T Обзор
An asynchronous SRAM (Static Random Access Memory) is a type of volatile memory that stores data in bistable latching flip-flops and does not require a clock signal or periodic refresh to retain contents, unlike DRAM. Within the memory hierarchy, it sits under RAM -> semiconductor memory -> memory ICs, and its clockless interface makes it simple to integrate with microcontrollers, FPGAs, and legacy bus-based systems where deterministic access timing matters more than raw density.
Key features of the K6F3216U6M family include super-low power consumption typical of Samsung's full CMOS static RAM process, a low-voltage 3V supply rail that reduces overall system power budgets, a wide 2M x16 organization that suits 16-bit and 32-bit data buses, and a compact fine-pitch ball grid array (FBGA) footprint that saves board space in dense assemblies.
The device is fabricated using Samsung's advanced full CMOS process technology, which minimizes static current draw and supports battery-backed and portable applications. The -EF70 speed grade guarantees a 55 ns address access time, adequate for embedded controllers, logging buffers, and data storage modules that do not require high-performance zero-wait-state memories. The TFBGA (Thin Fine-Pitch BGA) package provides low profile and reliable surface-mount assembly.
Typical applications include data storage and firmware boot buffers in embedded systems, industrial controllers requiring non-clock-dependent scratch memory, computing modules, embedded logging systems, and replacement sourcing for legacy designs that specified Samsung low-power SRAM.
When designing with this part, verify that your bus timing supports the 55 ns access time and confirm power-rail sequencing recommendations from the manufacturer datasheet; because this is a mature, slow-speed SRAM, plan second-source strategies early.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single procurement and design reference for the K6F3216U6M-EF70T.
Аналоги без доработки для K6F3216U6M-EF70T — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K6F3216U6M-EF70T (тот же форм-фактор и посадочное место) — отличается по Package, Memory Size, Organization, Technology, Refresh Requirement.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K6F2016U4D-FF70T00
✅ Прямая замена✓ В наличии
$2.05 / шт.
Открыть даташит →K6F2016U4E-EF70T
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →K6F1616U6A-EF55T
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →K6X0808C1D-BF70T
✅ Прямая замена✓ В наличии
$1.05 / шт.
Открыть даташит →K6X1008C2D-TF55
✅ Прямая замена✓ В наличии
$2.35 / шт.
Открыть даташит →K6F3216U6M-EF70T Максимальные параметры и электрические характеристики
| Тип памяти | SRAM - Asynchronous |
| Размер памяти | 32 Mbit |
| Организация памяти | 2M x 16 |
| Напряжение питания | 3 V |
| Access Time | 55 ns |
| Интерфейс | Parallel |
| Technology | Full CMOS Static RAM |
| Корпус | 55-TFBGA (7.5 x 12 mm) |
| Тип монтажа | Surface Mount |
| Speed Grade | -EF70 (55 ns) |
| Standard Pack Qty | 2400 |
| Статус RoHS | NO (per third-party listing) |
| Memory Composition | Volatile SRAM |
| Refresh Requirement | None (static memory) |
Руководство по цоколевке K6F3216U6M-EF70T в корпусе 55-tfbga (7.5 x 12 mm)
Цоколевка для K6F3216U6M-EF70T (корпус 55-tfbga (7.5 x 12 mm)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K6F3216U6M-EF70T.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K6F3216U6M-EF70T подходит для 6 применениеs: Industrial Controllers, Embedded Data Logging, Firmware Boot and Data Storage Modules, Battery-Backed Portable Systems, Computing Modules and SOMs, Legacy Replacement Sourcing.
Industrial Controllers
The K6F3216U6M-EF70T fits industrial controller designs that need deterministic, clock-free scratch memory. Its 55 ns asynchronous access means the MCU or FPGA bus can service the SRAM without a memory controller clock domain, simplifying timing closure in legacy PLC and motor-control boards. The 3V full-CMOS process keeps static current draw very low, which matters in control cabinets where standby power budgets are audited. With 2M x16 organization, a single device covers 16-bit data-path buffering for logging queues, look-up tables, and parameter storage. Designers should budget bus wait states for the 55 ns access time and verify the 55-TFBGA footprint against reflow process capability.
Рекомендуется
Embedded Data Logging
In embedded logging systems, the K6F3216U6M-EF70T serves as a high-speed circular buffer between sensor acquisition and slower non-volatile storage. The 32Mbit (4 MB) capacity holds substantial log windows at 16-bit sample width, while the 55 ns access time sustains continuous write streaming without flow control. Because it is a static RAM, no refresh overhead or latency jitter is introduced, so timestamp fidelity is preserved. The super-low-power CMOS process allows logging to continue during system sleep states powered from a backup rail. Engineers should implement power-fail detection so in-flight writes complete before the 3V rail collapses.
Рекомендуется
Firmware Boot and Data Storage Modules
The K6F3216U6M-EF70T is listed by Samsung for firmware boot and data storage roles in computing modules. In boot applications it can stage decompressed firmware images or serve as execution RAM before main DRAM is initialized, with the 2M x16 organization matching 16-bit and 32-bit boot buses. The asynchronous parallel interface removes clock-domain dependencies during early power-up, when clock trees are not yet stable. Its 55 ns timing is adequate for boot ROM shadowing at moderate bus speeds. Layout should prioritize short, length-matched address/data traces within the 55-TFBGA footprint region to protect the 55 ns access budget.
Рекомендуется
Battery-Backed Portable Systems
Samsung characterizes the K6F3216U6M family as super-low-power and low-voltage, making the -EF70T attractive for portable and battery-backed equipment where retained SRAM state must survive long idle periods. The 3V rail matches lithium primary cells and single-cell Li-ion via an LDO, and full-CMOS cells draw negligible static current in standby. The 4 MB capacity supports handheld instrument data caches, configuration stores, and session state retention. Designers should add a supervisor IC to switch the SRAM to battery power on main-rail failure and to hold chip-enable inactive during transitions to prevent corrupt writes.
Рекомендуется
Computing Modules and SOMs
System-on-module designs use the K6F3216U6M-EF70T as reliable, low-latency buffer memory for firmware, FPGA configuration images, and CPU scratch data. The compact 7.5 x 12 mm 55-TFBGA package conserves module area, and the parallel asynchronous bus interfaces directly to FPGA I/O banks without a memory controller. The 32Mbit density strikes a balance between footprint and capacity for module-level boot staging. Because the part is mature, module vendors should lock second-source or last-time-buy strategies; qualifying a same-family Samsung alternative preserves the BGA footprint and minimizes requalification effort.
Рекомендуется
Legacy Replacement Sourcing
A significant use case for the K6F3216U6M-EF70T is replacement sourcing: maintaining and repairing legacy industrial, telecom, and test equipment that specified Samsung super-low-power SRAM. Purchasing the exact -EF70T MPN preserves the original 55 ns timing budget and 55-TFBGA footprint with zero redesign, which is critical when original schematics and firmware are no longer maintained. Distributors such as DigiKey and Ampheo list stock as of 2026-09-01. Buyers should confirm date codes, verify RoHS status documentation (third-party listings report NO for this suffix), and purchase from authorized or reputable channels to avoid counterfeit risk.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K6F3216U6M-EF70T — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K6F2016U4D-FF70T00 | K6F2016U4E-EF70T | K6F1616U6A-EF55T | K6X0808C1D-BF70T | K6X1008C2D-TF55 |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Access Time | 55 ns | 70 ns (FF70 grade) | 70 ns (EF70 grade) | 55 ns | 70 ns | 55 ns |
| Interface | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous |
| Drop-in Compatibility | Reference part | Requires ball-map verification; different capacity | Requires ball-map verification; different capacity | Not drop-in - half capacity | Requires verification - different family | Requires verification - different family |
Ключевые отличия
- 32Mbit density in compact 55-TFBGA (против K6F1616U6A-EF55T)
- Faster 55 ns access grade (против K6F2016U4D-FF70T00)
- Super-low-power full CMOS process (против K6X0808C1D-BF70T)
Заметки по проектированию
The 55-TFBGA (7.5 x 12 mm) package requires a fine-pitch BGA footprint with via-in-pad or dogbone fanout. Follow the Samsung K6F3216U6M datasheet land pattern recommendations exactly; do not scale the footprint. Route address and data buses with matched lengths where possible and keep series termination close to the driving device to control reflections on the 55 ns access budget. Provide a solid VDD plane and at least one 0.1 uF decoupling capacitor per power ball group, placed within 2-3 mm of the package.
The device operates from a nominal 3V supply. Confirm exact VDD min/max range in the Samsung K6F3216U6M datasheet before finalizing the power tree, as this parameter was not present in the retrieved web data. For battery-backed designs, add a supervisor that deselects the chip (CE high) before and during power transitions to prevent data corruption, and size the backup source for the standby current listed in the datasheet - the full-CMOS process implies very low standby draw, but the exact figure must come from the manufacturer document.
This is a slow-speed (55 ns) asynchronous SRAM: budget bus wait states in your memory controller accordingly, and never assume zero-wait-state access. Also verify compliance expectations early - third-party listings report RoHS status NO for this suffix, which blocks use in RoHS-restricted new products. Finally, since this is a mature part with no verified drop-in cross-brand substitute, secure last-time-buy quantities or qualify a same-family alternative before end-of-life announcements.
Информация о соответствии
Third-party listing (penghe-ic.com) reports RoHS status: NO for K6F3216U6M-EF70T. Verify current compliance documentation with Samsung Semiconductor before use in RoHS-restricted products.
