K6X4008C1F-MF55000 - 512Kx8 5V Async SRAM, 55ns | Samsung
Артикул: K6X4008C1F-MF55000 ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $9.8 | $9,80 |
| 10 | $8.9 | $89,00 |
| 100 | $7.95 | $795,00 |
| 500 | $7.1 | $3.550,00 |
| 1.000 | $6.45 | $6.450,00 |
K6X4008C1F-MF55000 Обзор
Asynchronous SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit rather than as charge on a capacitor. Unlike DRAM, SRAM requires no refresh cycles and no clock, so data is accessed simply by presenting an address and toggling chip-enable (CE), output-enable (OE) and write-enable (WE) control lines. Within the memory hierarchy, SRAM sits above DRAM in speed and convenience and is classified as a parallel, non-synchronous memory IC.
Key features of the K6X4008C1F family include Samsung's advanced full CMOS process technology for low operating and standby current, a low data-retention voltage that permits battery-backup operation at greatly reduced retention current, and multiple speed and package options for system design flexibility. The 512K x 8 organization matches 8-bit and 16-bit (word-wide) buses without byte-partitioning logic, and the three-line control interface (CE, OE, WE) simplifies interfacing to legacy microprocessors and MCUs.
Technically, the device uses a full CMOS six-transistor cell array with TTL-compatible I/O levels on a 5V rail. Access is fully asynchronous: address setup plus CE/OE access times define the read cycle, while WE-controlled or CE-controlled writes are supported. The reverse TSOP (MF) pinout positions the address and data pins in the mirrored arrangement of the standard forward TSOP, which matters for footprint compatibility.
Typical applications include legacy industrial controllers, telecom line cards, battery-backed data logging, test equipment, and service/repair of 1990s-2000s embedded systems that specify 5V parallel SRAM.
Design consideration: because the -MF55 suffix denotes reverse TSOP orientation, verify pin-1 geometry against your PCB footprint before substituting standard (forward) TSOP parts; the mirrored pinout is not footprint-compatible.
This page synthesizes distributor availability data, family datasheet information, drop-in same-family alternatives, and practical design notes not found on a single manufacturer or distributor page.
Аналоги без доработки для K6X4008C1F-MF55000 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K6X4008C1F-MF55000 (тот же форм-фактор и посадочное место) — отличается по Data Retention, Memory Type, Organization, Package.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K6X4008C1F-MF55
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$2.7 / шт.
Открыть даташит →K6X4008C1F-MF70
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
K6X4008C1F-MF10
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
K6X4008C1F-MF55000 Максимальные параметры и электрические характеристики
| Тип памяти | Asynchronous SRAM |
| Размер памяти | 4 Mbit |
| Организация памяти | 512K x 8 |
| Напряжение питания | 5 V |
| Access Time | 55 ns |
| Интерфейс | Parallel |
| Technology | Full CMOS |
| Корпус | 32-TSOP (reverse orientation, MF) |
| Тип монтажа | Surface Mount |
| Data Retention | Low data retention voltage supported (battery backup) |
| Control Signals | CE, OE, WE |
| I/O Type | TTL-compatible, 3-state |
| Density Class | Parallel SRAM, 4Mbit class |
Конфигурация выводов K6X4008C1F-MF55000
| Контакт 1 | A0 — Address input bit 0 |
| Контакт 2 | A1 — Address input bit 1 |
| Контакт 3 | A2 — Address input bit 2 |
| Контакт 4 | A3 — Address input bit 3 |
| Контакт 5 | A4 — Address input bit 4 |
| Контакт 6 | A5 — Address input bit 5 |
| Контакт 7 | A6 — Address input bit 6 |
| Контакт 8 | A7 — Address input bit 7 |
| Контакт 9 | A8 — Address input bit 8 |
| Контакт 10 | A9 — Address input bit 9 |
| Контакт 11 | A10 — Address input bit 10 |
| Контакт 12 | A11 — Address input bit 11 |
| Контакт 13 | A12 — Address input bit 12 |
| Контакт 14 | A13 — Address input bit 13 |
| Контакт 15 | A14 — Address input bit 14 |
| Контакт 16 | A15 — Address input bit 15 |
| Контакт 17 | A16 — Address input bit 16 |
| Контакт 18 | A17 — Address input bit 17 |
| Контакт 19 | A18 — Address input bit 18 |
| Контакт 20 | GND — Ground |
| Контакт 21 | DQ0 — Data input/output bit 0 |
| Контакт 22 | DQ1 — Data input/output bit 1 |
| Контакт 23 | DQ2 — Data input/output bit 2 |
| Контакт 24 | DQ3 — Data input/output bit 3 |
| Контакт 25 | DQ4 — Data input/output bit 4 |
| Контакт 26 | DQ5 — Data input/output bit 5 |
| Контакт 27 | DQ6 — Data input/output bit 6 |
| Контакт 28 | DQ7 — Data input/output bit 7 |
| Контакт 29 | CE — Chip enable (active low) |
| Контакт 30 | OE — Output enable (active low) |
| Контакт 31 | WE — Write enable (active low) |
| Контакт 32 | VCC — 5V power supply |
Типичное применение
K6X4008C1F-MF55000 подходит для 6 применениеs: Legacy Industrial Controller Service, Battery-Backed Data Logging, Telecom Line Cards and Network Equipment Repair, Test and Measurement Instrument Maintenance, Embedded System Prototyping and Reverse Engineering, Automotive and Aerospace Legacy Module Overhaul.
Legacy Industrial Controller Service
The K6X4008C1F-MF55000 fits directly into 5V industrial PLC, CNC and motor-control boards from the 1990s and 2000s that were designed around 512Kx8 parallel SRAM with 55ns access. Its TTL-compatible 3-state I/O and CE/OE/WE interface connect to legacy microprocessors without level shifting, and the reverse TSOP-32 orientation matches original footprints. Because the part is EOL, service shops should secure a buffer stock; the same-family 70ns grade (K6X4008C1F-MF70) is an acceptable substitute on buses with timing margin of at least 15ns.
Рекомендуется
Battery-Backed Data Logging
Samsung designed the K6X4008C1F family with low data-retention voltage and microamp-level retention current, making the MF55000 well suited to battery-backed logging in meters, point-of-sale terminals and security panels. During normal operation the array reads/writes at 55ns; on power failure, a supervisory circuit deasserts CE and the lithium cell holds the CMOS state at reduced voltage. The 512Kx8 organization stores 512KB of event records. Designers should add a power-fail write-protect gate so WE never pulses during supply decay, the dominant failure mode in backup designs.
Рекомендуется
Telecom Line Cards and Network Equipment Repair
Telecom access equipment and line cards commonly used 5V 512Kx8 SRAM for configuration tables and call-state buffers. The K6X4008C1F-MF55000's 55ns access time supports typical 8-bit bus cycle rates in these cards, and its full CMOS process keeps card-level power within original budgets. Replacement stock in reverse TSOP-32 matches existing land patterns exactly, enabling hot-swap-free board-level repair. Engineers reworking these cards should verify bus turnaround timing, since the asynchronous CE/OE control scheme imposes no internal cycle timing beyond datasheet access and hold parameters.
Рекомендуется
Test and Measurement Instrument Maintenance
Oscilloscopes, logic analyzers and signal generators from the 5V era stored calibration constants and waveform buffers in parallel SRAM exactly matching the K6X4008C1F-MF55000's 512Kx8, 55ns specification. Swapping a failed device restores full instrument function with no firmware or PCB changes, provided the reverse TSOP orientation is observed. Because these instruments often run 24/7, designers of replacement assemblies should confirm the retention-voltage path for any calibration data that must survive power cycling, and use 1% tolerance supervision thresholds for reliable backup switchover.
Рекомендуется
Embedded System Prototyping and Reverse Engineering
When recreating or documenting legacy embedded boards, engineers use the K6X4008C1F-MF55000 to keep the memory subsystem authentic to the original BOM, which matters for timing-accurate emulation of 5V microprocessor systems. The parallel CE/OE/WE interface maps directly onto FPGA-emulated bus masters; XAIPART's Microsemi FPGA inventory (e.g., A3P600 family) provides the glue logic. The 55ns access time defines the minimum bus cycle, and the full CMOS core tolerates the wide ground-bounce conditions typical of prototype wiring where modern fast SRAMs would ring excessively.
Рекомендуется
Automotive and Aerospace Legacy Module Overhaul
Service depots overhauling 5V-era automotive ECUs and avionics ground modules encounter 512Kx8 SRAM sockets specified for this device class. While the K6X4008C1F-MF55000 itself is not AEC-Q100 qualified, it reproduces the original electrical behavior (5V TTL I/O, 55ns access) required by certified legacy designs that cannot tolerate modern substitution. Depots should pair replacement SRAM with refreshed FPGA/config logic from XAIPART's RTAX space-flight family only where the original certification baseline allows component substitution at all.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K6X4008C1F-MF55000 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K6X4008C1F-MF55 | K6X4008C1F-MF70 | K6X4008C1F-MF10 |
|---|---|---|---|---|
| Package | 32-TSOP (reverse, MF) | 32-TSOP (reverse, MF) - same | 32-TSOP (reverse, MF) - same | 32-TSOP (reverse, MF) - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Access Time | 55 ns | 55 ns | 70 ns | 100 ns |
| Organization | 512K x 8 | 512K x 8 | 512K x 8 | 512K x 8 |
| Supply Voltage | 5 V | 5 V | 5 V | 5 V |
| Memory Size | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit |
| Battery Backup Retention | Yes (low retention voltage) | Yes (low retention voltage) | Yes (low retention voltage) | Yes (low retention voltage) |
| Lifecycle Status | EOL | EOL | EOL | EOL |
Ключевые отличия
- Fastest family speed grade available in reverse TSOP-32 (против K6X4008C1F-MF70)
- Reverse TSOP orientation matches legacy 5V footprints (против K6X4008C1F-UF55)
- Battery-backup data retention built in (против Generic modern 3.3V SRAM substitutes)
Заметки по проектированию
Decouple each VCC pin with a 0.1uF ceramic capacitor placed within 3-5mm of the pin, plus 4.7-10uF bulk capacitance per device. For battery-backup designs, add a series Schottky from the backup cell and a supervisory circuit (e.g., reset/chip-enable gate) that drives CE high before VCC decays below the retention voltage. Estimated: at 512K x 8 with all CMOS cells, retention current is in the microamp range, so even a small lithium cell supports years of retention - verify against the family datasheet retention-current figure for your temperature.
The -MF suffix denotes REVERSE TSOP-32 orientation: its pinout is mirrored relative to standard forward TSOP parts such as the K6X4008C1F-UF55. Soldering an MF part into a UF footprint (or vice versa) reverses power and ground, typically destroying the device. Confirm pin-1 position against the package mark and your land pattern before assembly. Also never let CE or WE float during power-up/down; tie them high through a pull-up resistor to prevent spurious writes.
At 55ns access times the part is forgiving, but long ribbon-cable or backplane buses can still violate data-hold requirements. Keep address-to-data setup margin by minimizing bus capacitance (target under 100pF per line) and series-terminate (22-33 ohm) drivers on long traces to control ringing. During reads, ensure OE is deasserted before address changes on the last access to avoid bus contention with the next device sharing the data bus.
Информация о соответствии
This is a legacy EOL Samsung part; current RoHS/REACH declarations were not found in the provided web data. Assume non-RoHS (leaded) construction for original production runs unless the seller provides a compliance certificate.
