MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
Артикул: MT40A512M16JY-075E ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $40.98 | $40,98 |
| 10 | $38.5 | $385,00 |
| 100 | $35.2 | $3.520,00 |
| 500 | $32.8 | $16.400,00 |
| 1.000 | $30.5 | $30.500,00 |
MT40A512M16JY-075E Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower power consumption, and increased density compared to DDR3. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation. It is widely used in servers, desktops, laptops, and embedded systems where high bandwidth and capacity are required.
Key features of the MT40A512M16JY-075E include a refresh time of 8192 cycles, with 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. It supports auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, and CRC functions. The device is RoHS compliant and operates over a temperature range of 0°C to +95°C (TC). These features ensure reliable operation in demanding environments.
Technically, the MT40A512M16JY-075E utilizes Micron's advanced DRAM process technology, enabling high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports a parallel interface, simplifying integration with memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial systems where high memory bandwidth and capacity are critical. The 512M x 16 organization is ideal for systems requiring 16-bit data bus width, such as embedded processors and FPGAs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Follow the PCB layout guidelines in the Micron DDR4 datasheet to maintain signal integrity at high speeds.
Аналоги без доработки для MT40A512M16JY-075E — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT40A512M16JY-075E (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Operating Temperature, Refresh, Speed Grade.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT40A512M16JY-075E IT:B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M16JY-075E AIT:B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M16LY-075E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M16TB-062E:R
✅ Прямая замена✓ В наличии
$60 / шт.
Открыть даташит →K4A8G165WB-BCTD
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$37 / шт.
Открыть даташит →H5AN8G6NDJR-XNC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$55.6818 / шт.
Открыть даташит →MT40A512M16JY-075E Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Размер памяти | 8 Gbit |
| Организация памяти | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| Скорость передачи данных | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| Интерфейс | Parallel |
| Корпус | 96-FBGA (8x14) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | 0°C to +95°C (TC) |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Статус RoHS | Compliant |
| Особенности | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | 1.2V pseudo open-drain |
Конфигурация выводов MT40A512M16JY-075E
| Контакт A1 | VDD — Power supply |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт A5 | DQ2 — Data input/output 2 |
| Контакт A6 | DQ3 — Data input/output 3 |
| Контакт A7 | VDDQ — I/O power supply |
| Контакт A8 | DQ4 — Data input/output 4 |
| Контакт A9 | DQ5 — Data input/output 5 |
| Контакт A10 | VSS — Ground |
| Контакт A11 | DQ6 — Data input/output 6 |
| Контакт A12 | DQ7 — Data input/output 7 |
| Контакт B1 | VPP — Word line power supply |
| Контакт B2 | DQ8 — Data input/output 8 |
| Контакт B3 | DQ9 — Data input/output 9 |
| Контакт B4 | VSS — Ground |
| Контакт B5 | DQ10 — Data input/output 10 |
| Контакт B6 | DQ11 — Data input/output 11 |
| Контакт B7 | VDDQ — I/O power supply |
| Контакт B8 | DQ12 — Data input/output 12 |
| Контакт B9 | DQ13 — Data input/output 13 |
| Контакт B10 | VSS — Ground |
| Контакт B11 | DQ14 — Data input/output 14 |
| Контакт B12 | DQ15 — Data input/output 15 |
Типичное применение
MT40A512M16JY-075E подходит для 6 применениеs: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Automotive Infotainment.
High-Performance Computing
The MT40A512M16JY-075E provides 8Gbit DDR4 memory with 1.33 GHz clock speed, ideal for HPC systems requiring high bandwidth and capacity. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in dense server configurations. The parallel interface simplifies integration with high-speed memory controllers, enabling efficient data processing in scientific simulations and data analytics.
Рекомендуется
Networking Equipment
In networking switches and routers, the MT40A512M16JY-075E offers high-speed data buffering with 2666 MT/s data rate, ensuring low latency packet processing. Its 8Gbit density supports large routing tables and packet buffers. The device's auto self-refresh and CRC features enhance reliability in continuous operation. The 96-FBGA package allows compact board designs, critical for high-port-count equipment.
Рекомендуется
Industrial Automation
The MT40A512M16JY-075E operates over 0°C to +95°C, suitable for industrial environments. Its 8Gbit capacity supports complex control algorithms and data logging. The device's write leveling and dynamic on-chip termination ensure signal integrity in noisy industrial settings. The 1.2V operation reduces heat generation, enhancing reliability in sealed enclosures.
Рекомендуется
Embedded Systems
For embedded applications like IoT gateways and edge computing, the MT40A512M16JY-075E provides a balance of performance and power efficiency. Its 8Gbit density supports multitasking and local data processing. The 96-FBGA package is compact, fitting space-constrained designs. The device's low voltage operation extends battery life in portable embedded systems.
Рекомендуется
Data Center Servers
The MT40A512M16JY-075E is designed for server memory modules, offering high density and speed for virtualization and cloud computing. Its 1.33 GHz clock and 8Gbit capacity enable fast data access and large memory pools. The device's auto precharge and data mask functions optimize memory bandwidth. The 1.2V supply reduces power consumption in large-scale data centers.
Рекомендуется
Automotive Infotainment
The MT40A512M16JY-075E AIT:B variant is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance. Its 8Gbit capacity supports complex graphics and real-time processing. The device's wide temperature range and reliability make it ideal for in-vehicle use. The 96-FBGA package withstands vibration and thermal cycling.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT40A512M16JY-075E — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT40A512M16JY-075E IT:B | MT40A512M16JY-075E AIT:B | MT40A512M16LY-075E | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
| Operating Temperature Range | 0°C to +95°C | -40°C to +95°C | -40°C to +125°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- High density 8Gbit in 512Mx16 organization (против MT40A512M16LY-075E)
- Wide temperature range options (против K4A8G165WB-BCTD)
- Proven Micron quality and reliability (против H5AN8G6NDJR-XNC)
Заметки по проектированию
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes beneath the memory device to minimize noise. Follow Micron's DDR4 PCB design guidelines for trace length matching and termination.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a 4.7uF bulk capacitor for VPP. Ensure the power supply can handle transient currents during refresh and read/write operations.
The MT40A512M16JY-075E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values.
Информация о соответствии
RoHS compliance confirmed by JLCPCB listing. AEC-Q100 not applicable for standard grade; automotive variant AIT:B may be qualified.
