1EDN7116GXTMA1 vs 1EDN7136GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7116GXTMA1 sa pamamagitan ng Infineon at 1EDN7136GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7116GXTMA1 1EDN7136GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs —
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) 4 A
Peak Sink Current 4 A (typ) 8 A
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) Yes (VDD under-voltage lockout)
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Packhaging PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-VSON-10-4 (leadless, thermal pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL3 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Product Type — Low-side gate driver IC
Configuration — Single channel, non-inverting
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
Propagation Delay — Sub-nanosecond class
Temperature na Operasyon — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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