27C512-10 vs 27C512-20 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 27C512-10 sa pamamagitan ng Texas Instruments at 27C512-20 sa pamamagitan ng Fujitsu. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Texas Instruments
27C512-10 27C512-10 - 512Kbit (64Kx8) 100ns CMOS EPROM | Texas Instruments

27C512-10 - 512Kbit (64Kx8) 100ns CMOS EPROM | Texas Instruments

27C512-10 ✗ Tapus ng Buhay

Pagsanggunian na paghahambing

Parametro 27C512-10 27C512-20
Brand Texas Instruments Fujitsu
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Tapus ng Buhay Obsolete
Laki ng Memory 512 Kbit —
Organisasyon 64K x 8 64K x 8
Uri ng Memory OTP EPROM (CMOS) UV EPROM
Access Time (Speed Grade -10) 100 ns —
Supply Voltage (VCC) +5 V with +/-10% tolerance 5 V
Programming Voltage (VPP) +12.5 V [DATA_NEEDED: VPP voltage]
Standby Current 20 uA typical (CMOS standby) [DATA_NEEDED: standby current]
Operating Mode Totally static operation —
Interface Parallel, TTL compatible Parallel
Address Lines 15 (A0-A14) —
Data Lines 8 (Q0-Q7), tri-state outputs —
Control Signals /E (chip enable), /G (output enable) —
Pinout Standard JEDEC-approved 28-pin EPROM pinout —
Packhaging 28-pin DIP CQCC32 / LCC32 (ceramic, UV window)
Uri ng Pagpapasok Through Hole Surface Mount
Erase Method One-Time Programmable (not erasable) Ultraviolet light
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Tindminan RoHS unknown —
Technology — CMOS
Density — 512 Kbit (524,288 bits)
Maximum Access Time — 200 ns
Outputs — 3-state
Operation — Asynchronous
Word Size — 8 bit
Address Count — 65,536 words

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