2EDL5013U2DXTMA1 vs IR2109SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL5013U2DXTMA1 sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDL5013U2DXTMA1 IR2109SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration High-Side, Low-Side (Half-Bridge) Half-Bridge
Input Logic Non-Inverting —
Number of Channels 2 —
Peak Source Current 3 A —
Peak Sink Current 3 A —
Output Kumpigurasyon Non-Inverting —
Supply Voltage (VCC) 4.5 V to 5.5 V 10 V to 20 V
Bootstrap Voltage Rating 120 V max —
Rise Time (typ.) 4.4 ns —
Fall Time (typ.) 3.5 ns —
Miller Clamp 7 A active Miller clamp —
Bootstrap Diode Integrated Integrated
UVLO VCC and VBS under-voltage lockout —
Hanay ng Temperature na Operasyon -40C to +125C —
Packhaging PG-TSNP-12-5 (12-pin, 5x5 mm) SOIC-8
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Oras ng Pagtaas — 200 ns
Time ng Pagbaba — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
Temperature ng Junction na Operasyon — -40 C to +150 C

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