2EDL5013U2DXTMA1 vs IR2109SPBF 比較

詳細並排比較 2EDL5013U2DXTMA1 由 Infineon 與 IR2109SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 ✓ 啟用中

規格比較

參數 2EDL5013U2DXTMA1 IR2109SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration High-Side, Low-Side (Half-Bridge) Half-Bridge
Input Logic Non-Inverting —
Number of Channels 2 —
Peak Source Current 3 A —
Peak Sink Current 3 A —
輸出配置 Non-Inverting —
Supply Voltage (VCC) 4.5 V to 5.5 V 10 V to 20 V
Bootstrap Voltage Rating 120 V max —
Rise Time (typ.) 4.4 ns —
Fall Time (typ.) 3.5 ns —
Miller Clamp 7 A active Miller clamp —
Bootstrap Diode Integrated Integrated
UVLO VCC and VBS under-voltage lockout —
工作溫度範圍 -40C to +125C —
封裝 PG-TSNP-12-5 (12-pin, 5x5 mm) SOIC-8
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升時間 — 200 ns
下降時間 — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
工作接面溫度 — -40 C to +150 C

資料表與資源

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