2EDR7259XXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDR7259XXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDR7259XXUMA1 1ED3124MC12HXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Isolated Gate Driver IC —
Topolohiya Dual-channel, half-bridge independent outputs —
Isolation Technology Magnetic (coreless transformer) coupling Magnetic coupling (coreless transformer)
Number of Channels 2 —
Peak Source Current (typ.) 5 A —
Peak Sink Current (typ.) 9 A —
Isolation Voltage (Vrms) 5700 Vrms —
Transient Withstanding Voltage 8000 Vpk (per Infineon family datasheet) —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typ.) 38 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: ns value] —
UVLO Yes, independent per channel —
Logic Supply (VCC) 3.3 V or 5 V —
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Packhaging PG-DSO-14 (narrow body) PG-DSO-8 (DSO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
AEC-Q100 [DATA_NEEDED: automotive grade status] —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Bilang ng Outputs — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Oras ng Pagtaas — 15 ns
Time ng Pagbaba — 30 ns
Temperature na Operasyon — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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