BFU520AR vs BFU520R Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BFU520AR sa pamamagitan ng NXP Semiconductors at BFU520R sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
BFU520AR BFU520AR - NPN RF Transistor 12V 30mA 10GHz | NXP

BFU520AR - NPN RF Transistor 12V 30mA 10GHz | NXP

BFU520AR ✓ Nakahanda
NXP Semiconductors
BFU520R BFU520R - NPN 12V 10.5GHz Wideband RF Transistor | NXP

BFU520R - NPN 12V 10.5GHz Wideband RF Transistor | NXP

BFU520R ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BFU520AR BFU520R
Brand NXP Semiconductors NXP Semiconductors
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor NPN wideband silicon RF BJT NPN wideband silicon RF BJT
Collector-Emitter Breakdown Voltage (VCEO) 12 V —
Continuous Collector Current (IC) 30 mA —
Dalas ng Transisyon (ft) 10 GHz 10.5 GHz
Total Power Dissipation (Ptot) 450 mW —
Packhaging SOT-23 (TO-236AB), 3-pin SOT-143B (4-pin, dual-emitter, plastic)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40C to +150C [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (automotive qualified per distributor listing) —
Product Family BFU5 wideband RF transistor family —
Intended Application Band Small signal to medium power up to 2 GHz —
Polarity NPN —
Noise Figure [DATA_NEEDED: noise figure] [DATA_NEEDED: noise figure in dB]
DC Current Gain (hFE) [DATA_NEEDED: hFE] —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Packaging Reel (R suffix, tape and reel) —
Voltage ng Collector-Emitter (Vceo) — 12 V
Collector Current (IC max) — 30 mA
Total Power Dissipation — 450 mW
Frequency Range — up to 2 GHz application range
Noise Performance — Low noise, high breakdown
Automotive Qualification — AEC-Q101 qualified
Family — BFU5 (BFU5x wideband silicon RF transistors)
Configuration — Single NPN, dual-emitter
Application Class — Small signal to medium power
Gain — [DATA_NEEDED: gain]

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