BFU520AR vs BFU520R Karşılaştırma
Ayrıntılı yan yana karşılaştırma BFU520AR tarafından NXP Semiconductors ve BFU520R tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BFU520AR | BFU520R |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Continuous Collector Current (IC) | 30 mA | — |
| Geçiş Frekansı (ft) | 10 GHz | 10.5 GHz |
| Total Power Dissipation (Ptot) | 450 mW | — |
| Paket | SOT-23 (TO-236AB), 3-pin | SOT-143B (4-pin, dual-emitter, plastic) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -40C to +150C | [DATA_NEEDED: operating temperature range] |
| Qualification | AEC-Q101 (automotive qualified per distributor listing) | — |
| Product Family | BFU5 wideband RF transistor family | — |
| Intended Application Band | Small signal to medium power up to 2 GHz | — |
| Polarity | NPN | — |
| Noise Figure | [DATA_NEEDED: noise figure] | [DATA_NEEDED: noise figure in dB] |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Reel (R suffix, tape and reel) | — |
| Toplayıcı-Emisör Voltage (Vceo) | — | 12 V |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| Gain | — | [DATA_NEEDED: gain] |