BFU520AR vs BFU520R 比較
詳細並排比較 BFU520AR 由 NXP Semiconductors 與 BFU520R 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BFU520AR | BFU520R |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Continuous Collector Current (IC) | 30 mA | — |
| 轉換頻率 (ft) | 10 GHz | 10.5 GHz |
| Total Power Dissipation (Ptot) | 450 mW | — |
| 封裝 | SOT-23 (TO-236AB), 3-pin | SOT-143B (4-pin, dual-emitter, plastic) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -40C to +150C | [DATA_NEEDED: operating temperature range] |
| Qualification | AEC-Q101 (automotive qualified per distributor listing) | — |
| Product Family | BFU5 wideband RF transistor family | — |
| Intended Application Band | Small signal to medium power up to 2 GHz | — |
| Polarity | NPN | — |
| Noise Figure | [DATA_NEEDED: noise figure] | [DATA_NEEDED: noise figure in dB] |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Reel (R suffix, tape and reel) | — |
| 集極-射極電壓 (Vceo) | — | 12 V |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| Gain | — | [DATA_NEEDED: gain] |