BSC035N04LSGATMA1 vs BSC030N03MSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC035N04LSGATMA1 sa pamamagitan ng Infineon at BSC030N03MSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC035N04LSGATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 3M |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Temperature ng Junction na Operasyon | -55°C to +150°C | -55°C to +150°C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |