BSD235CH6327XTSA1 vs BSP316PH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSD235CH6327XTSA1 sa pamamagitan ng Infineon at BSP316PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSD235CH6327XTSA1 BSP316PH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V -100 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS™ low-voltage SIPMOS (P-channel MOSFET)
Hanay ng Temperature na Operasyon -55 °C to +150 °C (junction) -55 C to +150 C (junction)
Polarity N-channel + P-channel —
Channel Mode Enhancement Enhancement
Tindminan RoHS Compliant (lead-free) Compliant
Level ng MSL 1 1
Bilang ng Pin 6 —
FET Type — P-Channel
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Packhaging — PG-SOT223-4 (TO-261-4)
Bilang ng Pins — 3 + thermal tab
Packaging — Tape & Reel (H6327 suffix)

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