BSP125H6327XTSA1 vs BSR316PH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP125H6327XTSA1 sa pamamagitan ng Infineon at BSR316PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP125H6327XTSA1 - 600V 120mA N-Ch SIPMOS | SOT-223 | Infineon
BSP125H6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 600 V | -100 V |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Packhaging | PG-SOT223-4 (SOT-223-3 + tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (Unlimited) | 1 |
| Qualification | Automotive / Industrial grade | Automotive |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (junction) |
| Polarity | — | P-Channel |