BSZ068N06NSATMA1 vs IPB110P06LMATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ068N06NSATMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ068N06NSATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | P-Channel |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 46 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55 C to +175 C (TJ) |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 | — |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Packhaging / Kaso | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |