EP3SE260H780C3 vs EP3SE260H780C4L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C3 sa pamamagitan ng Intel at EP3SE260H780C4L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260H780C3 | EP3SE260H780C4L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Device Family | Stratix III Enhanced (Stratix III E) | — |
| Series | EP3SE | — |
| Logic Elements | 255,000 | 255,000 |
| Logic Array Blocks (LABs) | 10200 | — |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) | — |
| User I/Os | 488 | — |
| Operating Voltage (Core) | 0.9 V | — |
| Operating Voltage (Auxiliary) | 1.1 V | — |
| Process Technology | 65 nm CMOS | — |
| Speed Grade | C3 | C4 (middle/slow tier) |
| Temperature na Operasyon | Commercial, 0C to +85C | — |
| Maximum Core Frequency | 500 MHz | — |
| Packhaging | 780-ball FCBGA (HBGA), flip-chip | 780-ball FCBGA (HBGA 33x33 mm) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (flip-chip BGA) |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | 3 (168 hours) | — |
| Packaging Type | Tray | — |
| Configuration Memory Support | Fast passive parallel, JTAG, Active Serial | — |
| Tindminan RoHS | Compliant (per product listings) | Compliant (lead-free per datasheet) |
| Family | — | Stratix III E |
| LABs/CLBs | — | 10,200 |
| Total RAM Bits | — | 16,672,768 (16.7 Mbit) |
| User I/O Count | — | 488 |
| Core Voltage | — | 0.9 V (nominal) |
| Temperature ng Junction na Operasyon | — | 0C to +85C (commercial) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Transceivers | — | Up to 24 multi-gigabit transceivers |
| Memory Interface | — | DDR3, DDR2, QDRII+, RLDRAM II controllers |
| Configuration Mode | — | PS, FPP, JTAG with EPCS/EPCQ |