EP3SE260H780C4LN vs EP3SE260H780C4L Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C4LN sa pamamagitan ng Intel at EP3SE260H780C4L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EP3SE260H780C4LN EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel

EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel

EP3SE260H780C4LN ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EP3SE260H780C4LN EP3SE260H780C4L
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Huling Pagbili NRND
Family Stratix III E Stratix III E
Logic Elements 255,000 255,000
Embedded Memory 16,672,768 bits (16.67 Mbit) —
Logic Array Blocks (LABs) 10,200 —
Embedded Multipliers (18x18) 384 —
User I/O Count 488 488
Packhaging 780-ball FCBGA (FineLine BGA) 780-ball FCBGA (HBGA 33x33 mm)
Speed Grade C4 (commercial, moderate speed) C4 (middle/slow tier)
Temperature na Operasyon 0C to +85C (commercial) —
Core Voltage (VCC) 1.0 V —
I/O Voltage (VCCIO) 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) —
Auxiliary Voltage (VCCPD/VCCPT) 2.5 V / 3.0 V —
PLLs 8 —
Global Clock Networks 16 —
Process Node 40 nm TSMC —
Configuration Modes FPP, AS, PS, JTAG —
Tindminan RoHS Compliant Compliant (lead-free per datasheet)
Level ng MSL 3 (168 hours) [DATA_NEEDED: MSL level]
LABs/CLBs — 10,200
Total RAM Bits — 16,672,768 (16.7 Mbit)
Core Voltage — 0.9 V (nominal)
Temperature ng Junction na Operasyon — 0C to +85C (commercial)
Uri ng Pagpapasok — Surface Mount (flip-chip BGA)
Transceivers — Up to 24 multi-gigabit transceivers
Memory Interface — DDR3, DDR2, QDRII+, RLDRAM II controllers
Configuration Mode — PS, FPP, JTAG with EPCS/EPCQ

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