EP4CE55F23I7N vs EP4CE55F23C9L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F23I7N sa pamamagitan ng Intel at EP4CE55F23C9L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55F23I7N | EP4CE55F23C9L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements | 55,856 | — |
| Configurable Logic Blocks (CLBs) | 3,491 | — |
| Embedded Memory | 2,396,160 bits | 2,396,160 bits (2.5 Mbit) |
| Embedded 18x18 Multipliers | 56 | 156 |
| PLLs | 4 | 4 |
| Maximum User I/O | 324 | — |
| Packhaging | 484-ball FBGA (23x23 mm, 1.0 mm pitch) | 484-ball FBGA (F23) |
| Process Technology | TSMC 60 nm low-power | — |
| Core Voltage | 1.2 V | 1.2 V (typical) |
| Temperature na Operasyon | -40C to +100C (industrial, I7 grade) | -40C to +85C (industrial) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Lead-Free / RoHS | Yes (lead-free finish) | — |
| Configuration Modes | JTAG, AS, PS, FPP | — |
| Memory Interface Support | DDR, DDR2, QDRII | — |
| Family | — | Cyclone IV E |
| Logic Elements (LE) | — | 55,856 |
| User I/Os | — | 324 |
| Speed Grade | — | C9 (fastest commercial/industrial) |
| Process Node | — | 60 nm low-power |
| Configuration Method | — | SRAM-based, requires external flash |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Hard PCIe Blocks | — | 0 (soft PCIe via fabric) |