H5AN4G6NBJR-RDC vs H5AN4G6NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G6NBJR-RDC sa pamamagitan ng SK hynix at H5AN4G6NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G6NBJR-RDC | H5AN4G6NBJR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | CMOS, fully synchronous | — |
| Package Code | TFBGA (FBGA-96) | — |
| Package Shape | Rectangular | — |
| Package Width | 7.5 mm | — |
| Number of Terminals | 96 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet | — |
| Self Refresh | Auto / Self Refresh | Auto self-refresh |
| Data Mask Function | Yes | Yes (DM) |
| Asynchronous Reset | Yes | Yes (RESET_n) |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes (command/address CRC) |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) | — |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) | — |
| Laki ng Memory | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Technology | — | CMOS |
| Temperature na Operasyon | — | -40C to +95C |
| Packhaging | — | FBGA-96 (PBGA-96) |
| Tindminan RoHS | — | Compliant |