H5AN4G6NBJR-RDC vs H5AN4G6NBJR-UHC 比較

詳細並排比較 H5AN4G6NBJR-RDC 由 SK hynix 與 H5AN4G6NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G6NBJR-RDC H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC ✓ 啟用中
SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 啟用中

規格比較

參數 H5AN4G6NBJR-RDC H5AN4G6NBJR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
組織 256M x 16 256M x 16
供應電壓 1.2 V —
介面 CMOS, fully synchronous —
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
安裝類型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh Auto self-refresh
Data Mask Function Yes Yes (DM)
Asynchronous Reset Yes Yes (RESET_n)
On-Die Termination Dynamic ODT Dynamic ODT
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes Yes (command/address CRC)
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
記憶體容量 — 4 Gbit
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V
Technology — CMOS
工作溫度 — -40C to +95C
封裝 — FBGA-96 (PBGA-96)
RoHS 狀態 — Compliant

資料表與資源

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