H5AN8G6NDJR-XNC vs AS4C512M16D4A-62BIN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NDJR-XNC sa pamamagitan ng SK hynix at AS4C512M16D4A-62BIN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NDJR-XNC | AS4C512M16D4A-62BIN |
|---|---|---|
| Brand | SK hynix | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $55.68 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| Rate ng Data | 3200 Mbps | 3200 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Packhaging | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Organisasyon | — | 512M x 16 |
| Clock Rate | — | 1600 MHz |
| Volte ng Pagbibigay | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Temperature na Operasyon | — | -40°C to +95°C |
| Interface | — | POD (Pseudo Open Drain) |
| Latensya ng CAS | — | Programmable (e.g., 22 cycles) |
| Burst Length | — | 8 (with burst chop 4) |
| Refresh | — | Auto-refresh and self-refresh |
| Uri ng Pagpapasok | — | Surface Mount |
| Lead Free | — | Yes |