H5AN8G6NDJR-XNC vs AS4C512M16D4A-62BIN 比較
詳細並排比較 H5AN8G6NDJR-XNC 由 SK hynix 與 AS4C512M16D4A-62BIN 由 Alliance Memory. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ 啟用中規格比較
| 參數 | H5AN8G6NDJR-XNC | AS4C512M16D4A-62BIN |
|---|---|---|
| 品牌 | SK hynix | Alliance Memory |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $55.68 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| 資料速率 | 3200 Mbps | 3200 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| 封裝 | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| 組織 | — | 512M x 16 |
| Clock Rate | — | 1600 MHz |
| 供應電壓 | — | 1.14V ~ 1.26V (nominal 1.2V) |
| 工作溫度 | — | -40°C to +95°C |
| 介面 | — | POD (Pseudo Open Drain) |
| CAS 延遲 | — | Programmable (e.g., 22 cycles) |
| Burst Length | — | 8 (with burst chop 4) |
| Refresh | — | Auto-refresh and self-refresh |
| 安裝類型 | — | Surface Mount |
| Lead Free | — | Yes |