H5ANAG6NCR-VKC vs H5ANAG6NCJR-XN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NCR-VKC sa pamamagitan ng SK hynix at H5ANAG6NCJR-XN sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG6NCR-VKC | H5ANAG6NCJR-XN |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit | — |
| Organisasyon | 2G x 8 | 1G x 16 |
| Interface | DDR4 (Double Data Rate 4) | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Rate ng Data | [DATA_NEEDED: verified speed grade in Mbps] | 3200 Mbps/pin (DDR4-3200) |
| Packhaging | 96-ball FBGA | FBGA-96 (96-ball) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Banks | 16 banks (4 bank groups x 4) | — |
| Burst Length | BL8 | — |
| Refresh Mode | 1x / 2x / 4X per JEDEC DDR4 | — |
| Temperature na Operasyon | [DATA_NEEDED: temperature suffix range confirmation] | [DATA_NEEDED: operating temperature range] |
| Technology | CMOS | — |
| Application | Main memory (PC / server / embedded) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Density | — | 16 Gbit (1G x 16) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for -XN speed grade] |