H5ANAG8NCR-RDC vs H5ANAG8NCJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCR-RDC sa pamamagitan ng SK hynix at H5ANAG8NCJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NCR-RDC | H5ANAG8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $65.63 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Organisasyon | 2G x 8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Packhaging | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (fully synchronous, both clock edges) | — |
| Family | H5ANAG8N 16Gb DDR4 | — |
| Application Segment | Main memory (server, networking, industrial, embedded) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Max Data Rate | [DATA_NEEDED: speed bin data rate in MT/s] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Refresh | [DATA_NEEDED: refresh specification] | [DATA_NEEDED: refresh specification] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Rate ng Data | — | 3200 MT/s (DDR4-3200) |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |