H5ANAG8NCR-RDC vs H5ANAG8NCJR-XNC 比較
詳細並排比較 H5ANAG8NCR-RDC 由 SK hynix 與 H5ANAG8NCJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NCR-RDC | H5ANAG8NCJR-XNC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $65.63 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| 組織 | 2G x 8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封裝 | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (fully synchronous, both clock edges) | — |
| Family | H5ANAG8N 16Gb DDR4 | — |
| Application Segment | Main memory (server, networking, industrial, embedded) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Max Data Rate | [DATA_NEEDED: speed bin data rate in MT/s] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Refresh | [DATA_NEEDED: refresh specification] | [DATA_NEEDED: refresh specification] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 資料速率 | — | 3200 MT/s (DDR4-3200) |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |