H5TC4G63AFR-G7A vs K4B4G1646D-BYK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-G7A sa pamamagitan ng SK hynix at K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-G7A | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V | 1.35 V (also operates at 1.5 V) |
| Rate ng Data | 1600 Mbps (PC3-12800) | 1600 Mbps |
| Packhaging | 96-ball FBGA | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to 95°C (case) | 0°C to 85°C |
| Latensya ng CAS | Programmable (e.g., 11) | Programmable |
| Burst Length | 8 and 4 | — |
| Refresh Period | 7.8us at 85°C | — |
| On-Die Termination | Supported | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| Process Technology | CMOS | — |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |